IRF820 [INTERSIL]
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET; 2.5A ， 500V ， 3.000 Ohm的N通道功率MOSFET
| 型号： | IRF820 |
| 厂家： | 
Intersil |
| 描述： | 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET |
| 文件： | 总7页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF820
Data Sheet
July 1999
File Number 1581.4
2.5A, 500V, 3.000 Ohm, N-Channel Power
MOSFET
Features
• 2.5A, 500V
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
• r
= 3.000Ω
DS(ON)
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA17405.
Ordering Information
Symbol
PART NUMBER
PACKAGE
BRAND
IRF820
D
IRF820
TO-220AB
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-245
IRF820
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
IRF820
500
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
V
V
A
A
A
V
W
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
500
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
2.5
1.6
D
D
o
T
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
8.0
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
50
D
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.4
W/ C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
210
mJ
AS
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Maximum Temperature for Soldering
T
-55 to 150
C
J, STG
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
300
260
C
C
L
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
= 0V (Figure 10)
MIN
TYP
-
MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BV
I
= 250µA, V
500
-
4.0
25
250
-
V
V
DSS
D GS
V
V
V
V
V
= V , I = 250µA
GS
2.0
-
GS(TH)
DS
DS
DS
DS
D
Zero Gate Voltage Drain Current
I
= Rated BV
, V
DSS GS
= 0V
-
-
µA
µA
A
DSS
o
= 0.8 x Rated BV
, V
= 0V, T = 125 C
-
-
DSS GS
, V = 10V (Figure 7)
DS(ON)MAX GS
J
On-State Drain Current (Note 2)
Gate to Source Leakage Current
I
> I
D(ON)
x r
2.5
-
D(ON)
I
V
= ±20V
-
-
±100
3.0
-
nA
Ω
GSS
GS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
r
I
= 1.4A, V
= 10V (Figures 8, 9)
-
2.5
2.3
11
11
29
12
12
DS(ON)
D
GS
g
V
≥ 10V, I = 2.0A (Figure 12)
1.5
S
fs
DS
DD
D
t
V
= 250V, I ≈ 2.5A, R
GS
= 18Ω, R = 96Ω
-
-
-
-
-
15
18
42
18
19
ns
ns
ns
ns
nC
d(ON)
D
L
MOSFET Switching Times are Essentially
Independent of Operating Temperature
Rise Time
t
r
Turn-Off Delay Time
t
d(OFF)
Fall Time
t
f
Total Gate Charge
Q
V
= 10V, I = 2.5A, V
= 0.8 x Rated BV
DS DSS
g(TOT)
GS
D
(Gate to Source + Gate to Drain)
I
= 1.5mA
g(REF)
(Figure 14) Gate Charge is Essentially Independent
of Operating Temperature
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Q
Q
-
-
-
-
-
-
2.5
6.0
360
60
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
gs
gd
C
V
= 25V, V = 0V, f = 1MHz (Figure 11)
GS
ISS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Internal Drain Inductance
C
10
L
Measured From the
Contact Screw on Tab to
Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
3.5
D
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
-
-
4.5
7.5
-
-
nH
nH
D
L
D
Internal Source Inductance
L
Measured From the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
S
G
L
S
S
o
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
-
-
-
-
2.5
80
C/W
C/W
θJC
Free Air Operation
θJA
4-246
IRF820
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Continuous Source to Drain Current
I
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
-
-
-
-
2.5
8.0
A
A
SD
D
Pulse Source to Drain Current
(Note 3)
I
SDM
G
S
o
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
T = 25 C, I
J
= 2.5A, V
GS
= 0V (Figure 13)
-
-
1.6
540
2.3
V
SD
SD
SD
SD
o
t
T = 25 C, I
J
= 2.5A, dI /dt = 100A/µs
SD
130
0.57
300
1.4
ns
µC
rr
o
Q
T = 25 C, I
= 2.5A, dI /dt = 100A/µs
SD
RR
J
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
o
4. V
= 50V, starting T = 25 C, L = 60mH, R = 25Ω, peak I = 2.5A.
J G AS
DD
Typical Performance Curves Unless Otherwise Specified
1.2
2.5
2.0
1.5
1.0
1.0
0.8
0.6
0.4
0.2
0
0.5
0
0
50
100
150
25
50
75
T , CASE TEMPERATURE ( C)
C
100
125
150
o
o
T
, CASE TEMPERATURE ( C)
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
P
DM
0.05
0.1
0.02
t
t
0.01
1
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
+ T
J
DM
θJC
C
-2
10
-5
10
-4
-3
10
-2
10
10
0.1
1
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-247
IRF820
Typical Performance Curves Unless Otherwise Specified (Continued)
5
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 10V
OPERATION IN THIS AREA
IS LIMITED BY r
DS(ON)
GS
4
V
= 6.0V
GS
10
10µs
3
2
V
= 5.5V
GS
100µs
1
1ms
V
= 5.0V
= 4.5V
150
GS
1
o
= 25 C
= MAX RATED
T
T
10ms
DC
C
J
V
= 4.0V
GS
V
GS
SINGLE PULSE
0
0.1
2
3
0
50
100
200
250
1
10
10
10
V
, DRAIN TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
10
1
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 10V
GS
V
≥ 50V
DS
4
3
2
1
0
V
= 6.0V
GS
o
o
T
= 150 C
T
= 25 C
J
J
V
= 5.5V
GS
0.1
-2
V
= 5.0V
V
GS
V
= 4.0V
12
= 4.5V
GS
GS
10
0
2
4
6
8
10
0
8
16
20
4
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
, GATE TO SOURCE VOLTAGE (V)
GS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
10
8
3.0
2.4
1.8
1.2
0.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 10V, I = 2.5A
GS
D
V
= 10V
GS
6
V
= 20V
GS
4
2
0
0
-40
0
40
80
120
160
0
2
4
6
8
10
o
I , DRAIN CURRENT (A)
T , JUNCTION TEMPERATURE ( C)
D
J
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-248
IRF820
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
0.95
0.85
1000
800
600
400
200
0
I
= 250µA
V
= 0V, f = 1MHz
D
GS
ISS
C
C
C
= C
+ C
GS
GD
= C
GD
RSS
OSS
≈ C + C
DS
GD
C
ISS
C
OSS
RSS
C
0.75
-40
0
40
80
120
160
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
100
o
T , JUNCTION TEMPERATURE ( C)
V
J
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4.0
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.2
o
= 25 C
T
J
10
2.4
o
= 150 C
T
J
o
o
1.6
0.8
0
T
= 150 C
T = 25 C
J
J
1
0.1
0
0.4
0.8
, SOURCE TO DRAIN VOLTAGE (V)
SD
1.2
1.6
2.0
0
0.8
1.6
2.4
3.2
4.0
I , DRAIN CURRENT (A)
V
D
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I
= 2.5A
D
16
12
8
IRF820, IRF822
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
4
0
0
4
8
12
16
20
Q , GATE CHARGE (nC)
g
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-249
IRF820
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
-
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
V
R
L
DS
90%
90%
+
V
DD
10%
10%
R
G
0
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
SAME TYPE
AS DUT
g(TOT)
V
GS
12V
BATTERY
0.2µF
Q
gd
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
0
I
g(REF)
0
V
I
DS
G(REF)
I
CURRENT
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
D
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
4-250
IRF820
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4-251
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