IRF820 [SAMSUNG]

N-CHANNEL POWER MOSFETS; N沟道功率MOSFET


型号：	IRF820
厂家：	SAMSUNG
描述：	N-CHANNEL POWER MOSFETS N沟道功率MOSFET 晶体晶体管开关脉冲局域网
文件：	总6页 (文件大小：326K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

VISHAY

Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

VISHAY

POWER MOSFET

SUNTAC

POWER MOSFET

SUNTAC

POWER MOSFET

SUNTAC

POWER MOSFET

SUNTAC

Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOTOROLA

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

INFINEON

Power MOSFET

VISHAY

2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

MOTOROLA

Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

SAMSUNG

2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

MOTOROLA