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IRF7811WTR [INFINEON]

Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8;
IRF7811WTR
型号： IRF7811WTR
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

开关 脉冲 光电二极管 晶体管
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中文：  中文翻译
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PD-94031A  
IRF7811W  
HEXFET® Power MOSFET for DC-DC Converters  
• N-Channel Application-Specific MOSFETs  
• Ideal for CPU Core DC-DC Converters  
• Low Conduction Losses  
• Low Switching Losses  
A
D
1
2
3
4
8
7
S
S
D
Description  
6
5
S
D
D
This new device employs advanced HEXFET Power  
MOSFET technology to achieve an unprecedented  
balance of on-resistance and gate charge.The reduced  
conduction and switching losses make it ideal for high  
efficiency DC-DC converters that power the latest  
generation of microprocessors.  
G
SO-8  
Top View  
DEVICE CHARACTERISTICSꢀ  
The IRF7811W has been optimized for all parameters  
that are critical in synchronous buck converters including  
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.  
The IRF7811W offers particulary low RDS(on) and high Cdv/  
dt immunity for synchronous FET applications.  
IRF7811W  
RDS  
QG  
9.0mΩ  
18nC  
5.5nC  
12nC  
(on)  
The package is designed for vapor phase, infra-red,  
convection, or wave soldering techniques. Power  
dissipation of greater than 3W is possible in a typical  
PCB mount application.  
Qsw  
Qoss  
Absolute Maximum Ratings  
Parameter  
Symbol  
IRF7811W  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain or Source  
Current (VGS ≥ 4.5V)  
Pulsed Drain Current  
Power Dissipation  
VDS  
VGS  
ID  
30  
±12  
V
TA = 25°C  
TL = 90°C  
14  
13  
A
IDM  
PD  
109  
TA = 25°C  
TL = 90°C  
3.1  
W
3.0  
Junction & Storage Temperature Range  
Continuous Source Current (Body Diode)  
Pulsed Source Current  
TJ,TSTG  
IS  
–55 to 150  
3.8  
°C  
A
ISM  
109  
Thermal Resistance  
Parameter  
Max.  
40  
Units  
°C/W  
°C/W  
Maximum Junction-to-Ambientƒ  
Maximum Junction-to-Lead  
RθJA  
RθJL  
20  
3/13/01  
IRF7811W  
Electrical Characteristics  
Parameter  
Min Typ Max Units  
Conditions  
Drain-to-Source  
Breakdown Voltage  
BVDSS  
30  
–
–
V
mΩ  
V
VGS = 0V, ID = 250µA  
Static Drain-Source  
on Resistance  
RDS  
9.0  
12  
VGS = 4.5V, ID = 15A‚  
(on)  
Gate Threshold Voltage  
Drain-Source Leakage  
VGS(th)  
IDSS  
1.0  
VDS = VGS,ID = 250µA  
VDS = 24V, VGS = 0  
30  
Current  
150  
µA  
nA  
VDS = 24V, VGS = 0,  
Tj = 100°C  
Gate-Source Leakage  
Current  
IGSS  
±100  
24  
VGS = ±12V  
Total Gate Chg Cont FET  
Total Gate Chg Sync FET  
QG  
18  
15.6  
6.0  
VGS=5.0V, ID=15A, VDS=16V  
VGS = 5V, VDS< 100mV  
VDS = 16V, ID = 15A  
QG  
Pre-Vth  
QGS1  
Gate-Source Charge  
Post-Vth  
QGS2  
1.4  
nC  
Gate-Source Charge  
Gate to Drain Charge  
Switch Chg(Qgs2 + Qgd)  
Output Charge  
QGD  
Qsw  
Qoss  
RG  
4.1  
5.5  
12  
VDS = 16V, VGS = 0  
Gate Resistance  
Turn-on Delay Time  
Rise Time  
2.0  
11  
Ω
td (on)  
tr  
VDD = 16V, ID = 15A  
VGS = 5.0V  
11  
ns  
Turn-off Delay Time  
Fall Time  
td  
29  
Clamped Inductive Load  
(off)  
tf  
9.9  
2335  
400  
119  
Input Capacitance  
Output Capacitance  
Ciss  
Coss  
–
–
–
–
–
–
pF  
VDS = 16V, VGS = 0  
Reverse Transfer Capacitance Crss  
Source-Drain Rating & Characteristics  
Parameter  
Min Typ Max Units  
Conditions  
Diode Forward  
Voltage*  
VSD  
Qrr  
1.25  
V
IS = 15A‚, VGS = 0V  
Reverse Recovery  
Charge„  
45  
41  
nC  
di/dt ~ 700A/µs  
VDS = 16V, VGS = 0V, IS = 15A  
Reverse Recovery  
Charge (with Parallel  
Schottky)„  
Qrr(s)  
nC  
di/dt = 700A/µs  
(with 10BQ040)  
VDS = 16V, VGS = 0V, IS = 15A  
Notes:  

‚
ƒ
„
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.  
Pulse width ≤ 400 µs; duty cycle ≤ 2%.  
When mounted on 1 inch square copper board  
Typ = measured - Qoss  
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS  
measured at VGS = 5.0V, IF = 15A.  
2
www.irf.com  
IRF7811W  
2.0  
1.5  
1.0  
0.5  
0.0  
6.0  
4.0  
2.0  
0.0  
15A  
=
I
D
I
= 15A  
D
V
= 16V  
DS  
V
= 4.5V  
GS  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
0
4
8
12  
16  
20  
T , Junction Temperature ( C)  
J
Q
Total Gate Charge (nC)  
G,  
Fig 1. Normalized On-Resistance  
Fig 2. Typical Gate Charge Vs.  
Vs. Temperature  
Gate-to-Source Voltage  
0.020  
0.015  
0.010  
0.005  
4000  
3000  
2000  
1000  
0
V
= 0V,  
f = 1 MHZ  
GS  
C
= C + C  
,
C
ds  
SHORTED  
iss  
gs  
gd  
C
= C  
rss  
gd  
C
= C + C  
oss  
ds  
gd  
Ciss  
I
= 15A  
D
Coss  
Crss  
3.5  
4.0  
V
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1
10  
, Drain-to-Source Voltage (V)  
100  
Gate -to -Source Voltage (V)  
V
GS,  
DS  
Fig 4. Typical Capacitance Vs.  
Fig 3. On-Resistance Vs. Gate Voltage  
Drain-to-Source Voltage  
www.irf.com  
3
IRF7811W  
100  
100  
10  
1
°
T = 150 C  
J
°
T = 150 C  
J
10  
°
°
T = 25 C  
J
T = 25 C  
J
1
V
= 15V  
DS  
20µs PULSE WIDTH  
V
= 0 V  
GS  
0.1  
0.4  
0.1  
2.5  
0.6  
0.8  
1.0  
1.2  
3.0  
3.5  
4.0 4.5  
5.0  
V
,Source-to-Drain Voltage (V)  
SD  
V
, Gate-to-Source Voltage (V)  
GS  
Fig 5. Typical Transfer Characteristics  
Fig 6. Typical Source-Drain Diode  
Forward Voltage  
100  
D = 0.50  
10  
0.20  
0.10  
0.05  
P
DM  
0.02  
0.01  
1
t
1
t
2
SINGLE PULSE  
(THERMAL RESPONSE)  
Notes:  
1. Duty factor D =  
t / t  
1 2  
2. Peak T = P  
J
x Z  
+ T  
thJA A  
DM  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Rectangular Pulse Duration (sec)  
1
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
4
www.irf.com  
IRF7811W  
SO-8 Package Details  
INCH ES  
M ILLIM ET ERS  
D IM  
D
M IN  
M AX  
.0688  
.0098  
.018  
M IN  
1.35  
0.10  
0.36  
0.19  
4.80  
3.81  
M AX  
1.75  
0.25  
0.46  
0.25  
4.98  
3.99  
5
- B -  
A
.0532  
.0040  
.014  
A1  
B
8
1
7
2
6
3
5
4
5
H
E
C
D
E
.0075  
.189  
.0098  
.196  
0.25 (.010)  
M
A M  
- A -  
.150  
.157  
e
e
.050 BASIC  
.025 BASIC  
1.27 BASIC  
K x 45°  
6X  
e1  
e1  
H
K
0.635 BASIC  
θ
.2284  
.011  
0.16  
0°  
.2440  
5.80  
0.28  
0.41  
0°  
6.20  
0.48  
1.27  
8°  
A
.019  
.050  
8°  
- C -  
0.10 (.004)  
6
C
8X  
L
8X  
L
A1  
B
8X  
θ
0.25 (.010)  
M
C A S B S  
RECOM MENDED FOOTPRINT  
NOTES:  
0.72 (.028 )  
8X  
1. DIM ENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.  
2. CONTROLLING DIM ENSION : INCH.  
3. DIM ENSIONS ARE SHOW N IN MILLIMETERS (INCHES).  
4. OUTLINE CONFORM S TO JEDEC OUTLINE MS-012AA.  
6.46 ( .255 )  
1.78 (.070)  
8X  
5
DIMENSION DOES NOT INCLUDE M OLD PROTRUSIONS  
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).  
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..  
6
1.27 ( .050 )  
3X  
SO-8 Part Marking  
www.irf.com  
5
IRF7811W  
SO-8 Tape and Reel  
TER M INA L NU M BE R  
1
12.3 ( .484  
11.7 ( .461  
)
)
8.1 ( .318  
7.9 ( .312  
)
)
FEED D IRE C TIO N  
N O T E S :  
1 . C O N T R O L L IN G D IM E N S IO N : M ILL IM E TE R .  
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).  
3 . O U T L IN E C O N FO R M S T O E IA -4 81  
& E IA -5 41 .  
330.00  
(12.992)  
M AX .  
14.40 ( .566  
12.40 ( .488  
)
)
N O TES  
1. CO N TR O LLIN G D IM EN SIO N : M ILLIM ET ER.  
2. OU TLIN E C O N FO R M S TO EIA-481 EIA -541.  
:
&
Data and specifications subject to change without notice.  
This product has been designed and qualified for the consumer market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 3/01  
6
www.irf.com  

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