IRF7815_技术文档

PD - 96284

IRF7815PbF

HEXFET^®Power MOSFET

Applications

l Synchronous MOSFET for Notebook

V_DSS

R_DS(on)max

Qg (typ.)

25nC

43m @V_GS= 10V

150V

Processor Power

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters in

Networking Systems

A

D

1

8

S

Benefits

2

7

S

D

l Very Low R_DS(on)at 10V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

l 20V V_GSMax. Gate Rating

3

6

S

D

4

5

G

D

SO-8

Top View

Absolute Maximum Ratings

Parameter

Max.

150

± 20

5.1

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

V

GS

I

@ T_A= 25°C

D

@ T_A= 70°C

4.1

A

41

DM

Power Dissipation

P

@T_A= 25°C

@T_A= 70°C

2.5

W

D

Power Dissipation

1.6

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

T

J

T

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

20

Units

R_θJL

R_θJA

°C/W

–––

50

Notes through ꢀ are on page 9

www.irf.com

1

12/01/09

IRF7815PbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

BV_DSS

150

–––

0.17

34

–––

V

∆ΒV_DSS/∆T_J

R_DS(on)

Breakdown Voltage Temp. Coefficient –––

––– V/°C Reference to 25°C, I_D= 1mA

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

–––

3.0

43

V_GS= 10V, I_D= 3.1A

Ω

m

V_GS(th)

4.0

5.0

V

V_DS= V_GS, I_D= 100µA

∆

V_GS(th)

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

––– -12.2 ––– mV/°C

I_DSS

–––

8.2

–––

25

20

250

100

-100

–––

38

V_DS= 150V, V_GS= 0V

µA

V

_DS= 150V, V_GS= 0V, T_J= 125°C

V_GS= 20V

_GS= -20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

nA

S

V

gfs

Q_g

V_DS= 50V, I_D= 3.1A

–––

Q_gs1

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Source Charge

6.5

1.3

7.8

7.4

9.8

8..7

10

–––

V_DS= 75V

Q_gs2

Q_gs

V_GS= 10V

I_D= 3.1A

nC

Q_gd

Gate-to-Drain Charge

See Figs. 6, 16a & 16b

Q_godr

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Q_sw

Q_oss

R_G

Output Charge

nC V_DS= 16V, V_GS= 0V

Ω

Gate Resistance

Turn-On Delay Time

Rise Time

1.02

8.4

3.2

14

t_d(on)

t_r

t_d(off)

t_f

V

_DD= 75V, V_GS= 10V

I_D= 3.1A

ns

pF

Turn-Off Delay Time

Fall Time

Ω

R_G= 1.8

8.3

See Figs. 15a & 15b

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 1647 –––

V_GS= 0V

–––

129

30

–––

V_DS= 75V

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

Typ.

–––

Max.

Units

mJ

Single Pulse Avalanche Energy

E_AS

I_AR

529

3.1

Avalanche Current

A

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

MOSFET symbol

–––

2.3

(Body Diode)

Pulsed Source Current

showing the

integral reverse

A

I_SM

–––

41

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

–––

41

1.3

62

V

T = 25°C, I = 3.1A, V = 0V

J S GS

Reverse Recovery Time

Reverse Recovery Charge

ns T = 25°C, I = 3.1A, V_DD= 75V

J F

Q_rr

di/dt = 300A/µs

213

320

nC

2

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IRF7815PbF

100

10

100

10

1

VGS

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

VGS

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

TOP

BOTTOM

1

5.0V

0.1

0.01

60µs PULSE WIDTH

Tj = 150°C

5.0V

≤

60µs PULSE WIDTH Tj = 25°C

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.5

2.0

1.5

1.0

0.5

100

10

1

I

= 5.1A

D

V

= 50V

DS

V

= 10V

GS

≤

60µs PULSE WIDTH

T

= 150°C

J

T

= 25°C

J

0.1

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

-60 -40 -20

0

20 40 60 80 100 120140 160

T

J

, Junction Temperature (°C)

V

, Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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3

IRF7815PbF

100000

14.0

12.0

10.0

8.0

V

= 0V,

= C

f = 1 MHZ

GS

I = 3.1A

D

C

+ C , C

SHORTED

iss

gs

gd

ds

= C

rss

oss

gd

V

= 120V

= 75V

DS

= C + C

ds

gd

10000

1000

100

V

DS

VDS= 30V

C

iss

6.0

C

oss

4.0

C

rss

2.0

10

0.0

1

10

100

1000

0

5

10

, Total Gate Charge (nC)

G

15

20

25

30

35

V

, Drain-to-Source Voltage (V)

Q

DS

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

10

1

100

10

1

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

100µsec

T

= 150°C

J

10msec

1msec

T

= 25°C

J

T

= 25°C

A

Tj = 150°C

Single Pulse

V

GS

= 0V

0.1

0.3

0.5

0.7

0.9

0

1

10

100

1000

V

, Drain-to-Source Voltage (V)

V

, Source-to-Drain Voltage (V)

SD

DS

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

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IRF7815PbF

6

5

4

3

2

1

0

6.0

5.0

4.0

3.0

2.0

I

= 100uA

= 150uA

= 250uA

D

ID = 1.0mA

= 1.0A

I

D

25

50

75

100

125

150

-75 -50 -25

0

25 50 75 100 125 150

T

, Ambient Temperature (°C)

T , Temperature ( °C )

A

J

Fig 10. Threshold Voltage Vs. Temperature

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

100

D = 0.50

10

1

0.20

0.10

0.05

0.02

0.01

R₁

R₂

R₃

R₄

Ri (°C/W) τi (sec)

τ

^Jτ_J

τ

2.8482

0.012383

0.1

^Aτ_A

τ

¹τ₁

τ

16.4171

36.75014

²τ₂

³τ₃

⁴τ₄

20.8292 5.677801

9.8220 0.525832

0.01

0.001

0.0001

Ci= τi/Ri

Notes:

1. Duty Factor D = t1/t2

SINGLE PULSE

( THERMAL RESPONSE )

2. Peak Tj = P dm x Zthja + T

A

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

100

t

, Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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5

IRF7815PbF

100

90

80

70

60

50

2500

2000

1500

1000

500

I

= 5.1A

D

TOP

0.30A

0.44A

BOTTOM 3.1A

T

= 125°C

J

T

= 25°C

J

40

30

20

0

4

6

8

10

12 14 16

18 20

25

50

75

100

125

150

Starting T , Junction Temperature (°C)

J

V

Gate -to -Source Voltage (V)

GS,

Fig 12. On-Resistance Vs. Gate Voltage

Fig 13c. Maximum Avalanche Energy

Vs. Drain Current

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

V

20V

GS

Ω

0.01

t

p

I

AS

Fig 14a. Unclamped Inductive Test Circuit

Fig 14b. Unclamped Inductive Waveforms

R_D

V

DS

V_DS

90%

V_GS

D.U.T.

R_G

⁺V_DD

-

10%

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

V

GS

t

r

t

f

d(on)

d(off)

Fig 15a. Switching Time Test Circuit

Fig 15b. Switching Time Waveforms

6

www.irf.com

IRF7815PbF

Id

Vds

Vgs

L

VCC

DUT

0

Vgs(th)

20K

1K

Qgs1

Qgs2

Qgodr

Qgd

Fig 16b. Gate Charge Waveform

Fig 16a. Gate Charge Test Circuit

Driver Gate Drive

P.W.

Period

D =

D.U.T

Period

P.W.

+

_V***

=10V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

*

V_DD

**

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple

≤ 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** V_GS= 5V for Logic Level Devices

Fig 17. Diode Reverse Recovery Test Circuit for HEXFET^®Power MOSFETs

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7

IRF7815PbF

SO-8 Package Outline(Mosfet & Fetky)

Dimensions are shown in milimeters (inches)

SO-8 Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

8

www.irf.com

IRF7815PbF

SO-8 Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 110mH, R_G= 25Ω, I_AS= 3.1A

Pulse width ≤ 400µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board.

ꢀ R is measured at T_Jof approximately 90°C.

θ

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/2009

www.irf.com

9

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

of

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.


型号：	IRF7815
厂家：	Infineon
描述：	150V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装
文件：	总10页 (文件大小：270K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF7815 [INFINEON]

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