IRF7820TRPBF [INFINEON]
Synchronous MOSFET for Notebook Processor Power; 同步MOSFET用于笔记本处理器电源
| 型号： | IRF7820TRPBF |
| 厂家： | 
Infineon |
| 描述： | Synchronous MOSFET for Notebook Processor Power |
| 文件： | 总9页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7820PbF
HEXFET® Power MOSFET
Applications
l Synchronous MOSFET for Notebook
VDSS
RDS(on) max
Qg (typ.)
29nC
200V 78m@VGS = 10V
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
A
A
D
1
2
3
4
8
7
S
S
S
G
Benefits
l Very Low RDS(on) at 10V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
D
6
5
D
D
SO-8
Top View
l 20V VGS Max. Gate Rating
Absolute Maximum Ratings
Parameter
Max.
200
± 20
3.7
Units
VDS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
I
I
@ TA = 25°C
Continuous Drain Current, VGS @ 10V
D
D
@ TA = 70°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2.9
A
29
DM
Power Dissipation
Power Dissipation
P
D
P
D
@TA = 25°C
@TA = 70°C
2.5
W
1.6
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
T
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
R
R
JL
JA
°C/W
–––
50
Notes through ꢀ are on page 9
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1
07/24/2012
IRF7820PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
BVDSS
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
200
–––
–––
3.0
–––
0.23
62.5
4.0
–––
–––
78
V
VDSS/ TJ
VGS = 10V, ID = 2.2A
m
5.0
V
VDS = VGS, ID = 100μA
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
5.0
-12
–––
–––
–––
–––
–––
29
––– mV/°C
20
μA
VDS = 200V, VGS = 0V
250
VDS = 200V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
VGS = 20V
-100
VGS = -20V
gfs
Qg
–––
44
S
VDS = 50V, ID = 2.2A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Source Charge
8.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS = 100V
VGS = 10V
nC ID = 2.2A
See Figs. 6, 16a & 16b
Qgs2
Qgs
1.5
10.1
8.7
Qgd
Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
10.2
10.2
30
Qsw
Switch Charge (Qgs2 + Qgd
Output Charge
)
Qoss
RG
nC
VDS = 20V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
0.73
7.1
td(on)
tr
td(off)
tf
VDD = 200V, VGS = 10V
ID = 2.2A
3.2
ns
Turn-Off Delay Time
Fall Time
14
RG = 1.8
12
See Figs. 15a & 15b
Ciss
Coss
Crs s
Input Capacitance
Output Capacitance
1750
90
VGS = 0V
pF VDS = 100V
ƒ = 1.0MHz
Reverse Transfer Capacitance
25
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
606
2.8
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
–––
–––
–––
–––
1.5
29
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
ISM
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
33
1.3
50
V
T
= 25°C, I = 2.2A, V = 0V
S GS
J
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
T
= 25°C, I = 2.2A, VDD = 100V
F
J
di/dt = 500A/μs
Qrr
213
320
2
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IRF7820PbF
1000
100
10
100
10
1
VGS
15V
10V
7.0V
6.25V
6.0V
5.75V
5.5V
5.25V
VGS
15V
10V
7.0V
6.25V
6.0V
5.75V
5.5V
5.25V
TOP
TOP
BOTTOM
BOTTOM
5.25V
1
5.25V
0.1
0.01
60μs PULSE WIDTH
Tj = 150°C
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
0.0
I
= 3.7A
V
= 50V
D
DS
V
= 10V
60μs PULSE WIDTH
GS
T
= 150°C
J
T
= 25°C
J
0.1
4
4
5
5
6
6
7
7
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRF7820PbF
100000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 2.2A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
= C
rss
oss
gd
= C + C
V
= 160V
= 100V
= 40V
DS
DS
DS
ds
gd
10000
1000
100
V
V
C
iss
C
oss
6.0
C
4.0
rss
2.0
10
0.0
1
10
100
1000
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
100
OPERATION IN THIS AREA
100μsec
1msec
LIMITED BY R (on)
DS
10
1
T
= 150°C
J
10msec
1
T
= 25°C
= 0V
J
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
GS
0.1
0.1
1
10
100
1000
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7820PbF
4
3
2
1
0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
I
I
I
I
= 100μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
-75 -50 -25
0
25 50 75 100 125 150
T , Temperature ( °C )
J
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Ambient Temperature
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7820PbF
150
2500
2000
1500
1000
500
I
= 3.6A
I
D
D
TOP
0.25A
0.37A
125
BOTTOM 2.8A
T
= 125°C
J
100
75
T
= 25°C
J
50
0
4
6
8
10 12 14
16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01
t
p
I
AS
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
Pulse Width µs
Duty Factor
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
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IRF7820PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
Driver Gate Drive
P.W.
Period
D =
D.U.T
Period
P.W.
+
V***
=10V
GS
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
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7
IRF7820PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
IR WORLD
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF7820PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 155mH, RG = 50, IAS = 2.8A
Pulse width 400μs; duty cycle 2%.
When mounted on 1 inch square copper board.
ꢀ R is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/12
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9
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