IRF7811AV_05 [INFINEON]
N-Channel Application-Specific MOSFETs; N沟道特定应用的MOSFET
| 型号： | IRF7811AV_05 |
| 厂家： | 
Infineon |
| 描述： | N-Channel Application-Specific MOSFETs |
| 文件： | 总6页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94009B
IRF7811AV
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
A
A
D
1
2
3
4
8
7
S
S
S
G
D
• 100% RG Tested
6
5
D
D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
Top View
DEVICE CHARACTERISTICSꢀ
The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including
IRF7811AV
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811AV offers an extremely low combination of
Qsw & RDS(on) for reduced losses in both control and
synchronous FET applications.
11 mΩ
17 nC
6.7 nC
RDS(on)
QG
QSW
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
QOSS
8.1 nC
Absolute Maximum Ratings
Parameter
Symbol
IRF7811AV
Units
VDS
30
V
Drain-to-Source Voltage
Gate-to-Source Voltage
VGS
±20
TA = 25°C
TL = 90°C
Continuous Output Current
(VGS ≥ 4.5V)
10.8
A
I
D
11.8
100
I
Pulsed Drain Current
DM
TA = 25°C
TL = 90°C
2.5
Power Dissipation
P
W
°C
A
D
3.0
TJ , T
IS
-55 to 150
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
STG
2.5
50
ISM
Thermal Resistance
Parameter
Symbol
Typ
–––
–––
Max
50
Units
Rθ
JA
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
°C/W
Rθ
JL
20
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1
11/01/05
IRF7811AV
Electrical Characteristics
Parameter
Symbol Min Typ Max Units
Conditions
V(BR)DSS
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
30
––– –––
11 14
V
VGS = 0V, ID = 250µA
–––
m
V
GS = 4.5V, ID = 15A
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
Ω
1.0 ––– 3.0
V
––– –––
––– –––
50
20
µA
IDSS
Drain-to-Source Leakage Current
µA VDS = 24V, VGS = 0V
––– ––– 100 µA VDS = 24V, VGS = 0V, TJ = 100°C
IGSS
Qg
Gate-to-Source Leakage Current
Total Gate Charge, Control FET
Total Gate Charge, Synch FET
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
––– ––– ±100 nA
V
GS = ± 20V
–––
–––
17
14
26
21
nC
VDS = 24V, ID = 15A, VGS = 5.0V
Qg
VGS = 5.0V, VDS < 100mV
Qgs1
Qgs2
Qgd
QSW
QOSS
RG
––– 3.4 –––
––– 1.6 –––
––– 5.1 –––
––– 6.7 –––
VDS = 16V, ID = 15A
VDS = 16V, VGS = 0
––– 8.1
12
Gate Resistance
0.5 ––– 4.4
––– 8.6 –––
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
ns VDD = 16V
ID = 15A
Rise Time
–––
–––
–––
21
43
10
–––
–––
–––
Turn-Off Delay Time
VGS = 5.0V
Fall Time
Clamped Inductive Load
GS = 0V
VDS = 10V
Ciss
Coss
Crss
Input Capacitance
––– 1801 –––
––– 723 –––
pF
V
Output Capacitance
Reverse Transfer Capacitance
–––
46
–––
Diode Characteristics
Parameter
Symbol Min Typ Max Units
Conditions
TJ = 25°C, IS = 15A ,VGS = 0V
VSD
Diode Forward Voltage
––– ––– 1.3
V
di/dt = 700A/µs
Qrr
Qrr
Reverse Recovery Charge
–––
–––
50
43
––– nC
––– nC
V
DD = 16V, VGS = 0V, ID = 15A
di/dt = 700A/µs , (with 10BQ040)
DD = 16V, VGS = 0V, ID = 15A
Reverse Recovery Charge
(with Parallel Schottsky)
V
Notes:
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS =5.0V, IF = 15A.
Rθ is measured at TJ approximately 90°C
2
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IRF7811AV
6
4
2
0
2.0
1.5
1.0
0.5
0.0
15A
I =
D
VDS = 16V
15A
=
I
D
V
= 4.5V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
5
10
15
20
°
T , Junction Temperature
( C)
Q
, Total Gate Charge (nC)
J
G
Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge
Figure 1. Normalized On-Resistance vs. Temperature
0.020
3000
V
C
= 0V, f = 1 MHZ
= C + C , C
GS
iss
I
= 15A
D
SHORTED
gd ds
gs
C
C
= C
0.018
0.016
0.014
0.012
0.010
0.008
2500
2000
1500
1000
500
rss
oss
gd
ds
= C
+ C
gd
Ciss
Coss
Crss
0
3.0
6.0
9.0
12.0
15.0
1
10
100
V
Gate -to -Source Voltage (V)
V
, Drain-to-Source Voltage (V)
GS,
DS
Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage
Figure 4. Typical Capacitance vs. Drain-to-Source Voltage
100
100
°
T = 150 C
J
°
T = 150 C
J
10
10
°
T = 25 C
J
°
T = 25 C
J
1
1
V
= 15V
DS
20µs PULSE WIDTH
V
= 0 V
GS
0.1
0.1
0.3
0.6
0.9
1.2
1.5
2.0
2.5
V
3.0
3.5
4.0 4.5
5.0
V
,Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
SD
GS
Figure 5. Typical Transfer Characteristics
Figure 6. Typical Source-Drain Diode Forward Voltage
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3
IRF7811AV
100
D = 0.50
0.20
10
0.10
0.05
P
2
DM
0.02
1
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
50 u
8V
5 uH
Schottky -6A
VDD
450
50 u
16Vz500mW
Repetition rate:100Hz
125nS
Mic4452BM
450
50 Ohms probe
V
ds
90%
10%
V
gs
t d(off)
t r
(v)
t d(on)
t f( v)
Switching Time Waveforms
Figure 8. Clamped Inductive load test diagram and switching waveform
4
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IRF7811AV
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMET ER S
DIM
A
D
B
MIN
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
.0532
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
4
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y= LAST DIGIT OF THE YEAR
XXXX
F7101
WW = WEEK
INTERNATIONAL
RECTIFIER
LOGO
A = ASSEMBLYSITE CODE
LOT CODE
PART NUMBER
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5
IRF7811AV
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/05
6
www.irf.com
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