IRF7754GPBF [INFINEON]
HEXFET® Power MOSFET Ultra Low On-Resistance; HEXFET功率MOSFET超低导通电阻
| 型号： | IRF7754GPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET Ultra Low On-Resistance |
| 文件： | 总9页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96152A
IRF7754GPbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Lead-Free
VDSS
-12V
RDS(on) max
ID
25mΩ@VGS = -4.5V
34mΩ@VGS = -2.5V
49mΩ@VGS = -1.8V
-5.4A
-4.6A
-3.9A
l Halogen-Free
Description
HEXFET® Power MOSFETs from International Rectifier
utilizeadvancedprocessingtechniquestoachieveextremely
lowon-resistancepersiliconarea.Thisbenefit,combined
withtheruggedizeddevicedesign,thatInternationalRectifier
iswellknownfor,providesthedesignerwithanextremely
efficient and reliable device for battery and load
management.
TSSOP-8
TheTSSOP-8packagehas45%lessfootprintareathanthe
standardSO-8.ThismakestheTSSOP-8anidealdevicefor
applicationswhereprintedcircuitboardspaceisatapremium.
Thelowprofile(<1.2mm)allowsittofiteasilyintoextremely
thinenvironmentssuchasportableelectronicsandPCMCIA
cards.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Max.
-12
Units
V
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-5.5
-4.4
A
-22
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1
W
W
0.64
0.01
±8
W/°C
V
VGS
Gate-to-Source Voltage
TJ , TSTG
Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
125
Units
°C/W
RθJA
www.irf.com
1
05/14/09
IRF7754GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-12 ––– –––
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.008 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 25
––– 34
––– 49
-0.4 ––– -0.9
16 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 22 –––
––– 3.9 –––
––– 4.8 –––
––– 9.8 14.7
VGS = -4.5V, ID = -5.4A
GS = -2.5V, ID = -4.6A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
V
VGS = -1.8V, ID = -3.9A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -5.4A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8V
VGS(th)
gfs
IDSS
Gate Threshold Voltage
V
S
Forward Transconductance
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
IGSS
VGS = 8V
Qg
ID = -5.4A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -6V
VGS = -4.5V
VDD = -6V, VGS = -4.5V
ID = -1.0A
ns
––– 18
27
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 267 401
––– 191 287
––– 1984 –––
––– 618 –––
––– 385 –––
RD = 6Ω
RG = 6Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -6V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-1.0
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-22
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.0A, VGS = 0V
TJ = 25°C, IF = -1.0A
––– 39
––– 27
59
41
ns
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRF7754GPbF
100
10
1
100
10
VGS
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
BOTTOM -1.0V
1
-1.0V
-1.0V
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
-5.5A
=
I
D
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= -10V
DS
20µs PULSE WIDTH
V
=-4.5V
GS
0.1
1.0
1.2
1.4
1.6 1.8
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
www.irf.com
3
IRF7754GPbF
6
5
4
3
2
1
0
3200
I = -5.4A
D
V
V
=-9.6V
=-6V
V
C
= 0V, f = 1 MHZ
DS
DS
GS
= C + C , C
SHORTED
2800
2400
2000
1600
1200
800
iss gs gd ds
C
= C
gd
rss
C
= C + C
oss
ds gd
Ciss
Coss
Crss
400
0
0
5
10
15
20
25
30
1
10
100
Q , Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
1
°
T = 150 C
J
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
J
°
T = 150 C
V
= 0 V
GS
Single Pulse
0.1
0.2
0.4
0.6
0.8
1.0
0.1
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
IRF7754GPbF
6.0
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
, Case Temperature( C)
T
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
SINGLE PULSE
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7754GPbF
0.070
0.060
0.050
0.040
0.1
0.08
0.06
0.04
0.02
0
V
= -1.8V
GS
I
= -5.5A
D
0.030
0.020
0.010
V
= -2.5V
GS
V
= -4.5V
15.0
GS
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.0
5.0
10.0
20.0
25.0
-V
GS,
Gate -to -Source Voltage (V)
-ID , Drain Current ( A )
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
-
V
+
DS
10 V
D.U.T.
Q
Q
GD
GS
V
GS
-3mA
V
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
www.irf.com
IRF7754GPbF
1.0
0.8
0.6
0.4
0.2
300
200
100
0
I
= -250µA
D
-75 -50 -25
0
25
50
75 100 125 150
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
T , Temperature ( °C )
Time (sec)
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
www.irf.com
7
IRF7754GPbF
TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRF7754GPbF
TSSOP8 Part Marking Information
TSSOP-8 Tape and Reel Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2009
www.irf.com
9
相关型号：
IRF7754PBF
Small Signal Field-Effect Transistor, 5.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, ROHS AND REACH COMPLIANT, TSSOP-8
INFINEON
IRF7754TR
Small Signal Field-Effect Transistor, 5.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, TSSOP-8
INFINEON
©2020 ICPDF网 联系我们和版权申明