IRF7456TRPBF-1 [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRF7456TRPBF-1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总8页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMPS MOSFET
IRF7456PbF-1
HEXFET® Power MOSFET
VDS
20
0.0065
41
V
Ω
A
A
D
1
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
8
S
2
7
S
D
nC
A
3
6
S
D
16
4
5
G
D
(@TA = 25°C)
SO-8
Top View
Applications
lHigh Frequency DC-DC Converters with Synchronous Rectification
Features
Benefits
⇒
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
Standard Pack
Form
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF7456PbF-1
IRF7456TRPbF-1
IRF7456PbF-1
SO-8
Absolute Maximum Ratings
Symbol
VDS
Parameter
Drain-Source Voltage
Max.
20
Units
V
VGS
Gate-to-Source Voltage
± 12
16
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
13
A
130
2.5
PD @TA = 25°C
PD @TA = 70°C
W
W
1.6
0.02
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
RθJA
TypicalSMPSTopologies
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes through are on page 8
1
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November 20, 2013
IRF7456PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
20 ––– –––
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.00470.0065
––– 0.00570.0075
––– 0.011 0.020
VGS = 10V, ID = 16A
VGS = 4.5V, ID = 13A
VGS = 2.8V, ID = 3.5A
VDS = VGS, ID = 250μA
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
0.6
––– 2.0
V
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
VDS = 16V, VGS = 0V
μA
Drain-to-Source Leakage Current
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 12V
IGSS
nA
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
44
––– –––
S
VDS = 10V, ID = 16A
ID = 16A
Qg
–––
–––
–––
–––
–––
–––
–––
41
9.7
18
62
15
27
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 16V
VGS = 5.0V,
20 –––
25 –––
50 –––
52 –––
VDD = 10V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 3640 –––
––– 1570 –––
––– 330 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
250
16
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
0.25
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
2.5
Conditions
MOSFET symbol
D
IS
Continuous Source Current
(Body Diode)
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 130
––– ––– 1.2
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
V
TJ = 25°C, IS = 2.5A, VGS = 0V
––– 48
72
ns
TJ = 25°C, IF = 2.5A
Qrr
––– 74 110
nC di/dt = 100A/μs
2
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November 20, 2013
IRF7456PbF-1
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
BOTTOM 2.0V
1
2.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
°
T = 150 C
J
°
2.0V
1
T = 25 C
J
1
0.1
0.1
0.1
1
10
100
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
16A
=
I
D
100.0
10.0
1.0
T
= 150°C
J
1.5
1.0
0.5
0.0
T
= 25°C
J
V
= 15V
V
=10V
DS
20μs PULSE WIDTH
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0.1
T , Junction Temperature( C)
J
2.0
2.2
2.4
2.6
2.8
3.0
3.2
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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November 20, 2013
IRF7456PbF-1
6000
5000
4000
3000
2000
1000
0
12
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 16A
GS
V
= 16V
DS
C
= C + C
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
iss
6
C
oss
4
2
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
14
0
1
10
100
0
20
40
60
80
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
1ms
10
°
T = 25 C
J
1
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.8
1
0.1
0.2
0.1
1
10
100
0.6
1.0
1.4
2.2
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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November 20, 2013
IRF7456PbF-1
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
+VDD
-
4.5V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Case Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
P
2
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.1
0.01
t
2
Notes:
1. Duty factor D =
2. Peak T =P
J
t / t
1
x Z
+ T
A
DM
thJA
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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November 20, 2013
IRF7456PbF-1
0.0062
0.0058
0.0054
0.0050
0.0046
0.012
0.010
0.008
0.006
0.004
V
= 4.5V
GS
I
= 16A
V
= 10V
D
GS
0
20
40
60
80
100
0
4
8
12
16
I
, Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3μF
VGS
.2μF
12V
Q
Q
GD
GS
600
+
V
I
DS
D.U.T.
D
-
V
G
TOP
7.2A
10A
BOTTOM 16A
V
GS
500
400
300
200
100
0
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
andWaveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
-
I
20V
25
50
75
100
125
150
0.01
Ω
t
p
I
AS
°
Starting T , Junction Temperature ( C)
J
Fig 15a&b. Unclamped Inductive Test circuit
Fig 15c. Maximum Avalanche Energy
andWaveforms
Vs. DrainCurrent
6
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November 20, 2013
IRF7456PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU T L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A= ASSEMBLY SITE CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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November 20, 2013
IRF7456PbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-S TD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 2.0mH, RG = 25Ω, IAS = 16A.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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November 20, 2013
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