IRF7457TRPBF-1 [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRF7457TRPBF-1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总8页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7457PbF-1
HEXFET® Power MOSFET
VDS
20
V
A
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
A
7.0
m
Ω
1
2
3
4
8
D
S
S
S
G
7
D
10.5
28
m
Ω
6
D
nC
A
5
D
15
SO-8
(@TA = 25°C)
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF7457PbF-1
IRF7457TRPbF-1
IRF7457PbF-1
SO-8
Absolute Maximum Ratings
Symbol
VDS
Parameter
Drain-Source Voltage
Max.
20
Units
V
VGS
Gate-to-Source Voltage
± 20
15
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
12
A
120
2.5
PD @TA = 25°C
PD @TA = 70°C
W
W
1.6
0.02
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
1
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June 30, 2014
IRF7457PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA
–––
–––
1.0
5.5
7.0
V
GS = 10V, ID = 15A
mΩ
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
8.0 10.5
––– 3.0
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250μA
VDS = 16V, VGS = 0V
V
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
Drain-to-Source Leakage Current
μA
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 16V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 16V, ID = 12A
ID = 12A
30
––– –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
28
11
10
25
42
17
15
38
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 10V
VGS = 4.5V,
VGS = 0V, VDS = 10V
VDD = 10V,
14 –––
16 –––
16 –––
7.5 –––
ID = 12A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
Ciss
Coss
Crss
Input Capacitance
––– 3100 –––
––– 1600 –––
––– 270 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
265
Units
mJ
EAS
IAR
Avalanche Current
–––
15
A
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
2.5
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
120
S
––– 0.8 1.3
––– 0.67 –––
V
TJ = 25°C, IS = 12A, VGS = 0V
VSD
Diode Forward Voltage
TJ = 125°C, IS = 12A, VGS = 0V
TJ = 25°C, IF = 12A, VR= 15V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 50
––– 70 105
––– 50 75
––– 74 110
75
ns
Qrr
trr
nC di/dt = 100A/μs
ns TJ = 125°C, IF = 12A, VR=15V
nC di/dt = 100A/μs
Qrr
2
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June 30, 2014
IRF7457PbF-1
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
BOTTOM2.7V
2.7V
2.7V
20μs PULSE WIDTH
20μs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
15A
=
I
D
1.5
1.0
0.5
0.0
100
10
1
°
T = 150 C
J
°
T = 25 C
J
V
= 15V
DS
V
=10V
GS
20μs PULSE WIDTH
0.1
2.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
3.5
4.0
4.5
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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June 30, 2014
IRF7457PbF-1
5000
4000
3000
2000
1000
0
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I
D
=
12A
C
= C + C
iss
gs
gd ,
V
= 10V
C
= C
DS
rss
gd
C
= C + C
oss
ds
gd
C
iss
6
C
4
oss
2
C
rss
0
0
10
20
30
40
50
60
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.1
0.8
1.4
2.0
2.6
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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June 30, 2014
IRF7457PbF-1
RD
16
13
10
6
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
3
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
2
DM
t
1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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June 30, 2014
IRF7457PbF-1
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
VGS = 4.5V
I
= 15A
D
VGS = 10V
3.0
3.5
4.0
4.5
5.0
5.5
0
20
40
60
80
100
120
V
Gate -to -Source Voltage (V)
I
, Drain Current ( A )
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 14. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3μF
VGS
.2μF
12V
Q
Q
GD
GS
+
V
DS
D.U.T.
-
700
V
G
I
D
V
GS
TOP
5.4A
9.6A
12A
3mA
Charge
600
500
400
300
200
100
0
BOTTOM
I
I
D
G
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
25
50
75
100
125
150
V
DD
-
I
A
°
Starting T , Junction Temperature ( C)
J
20V
Ω
0.01
t
p
I
AS
Fig 14c. Maximum Avalanche Energy
Fig 14a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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June 30, 2014
IRF7457PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
D
B
MIN
.0532
A1 .0040
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A
E
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU T L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A= ASSEMBLY SITE CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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June 30, 2014
IRF7457PbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 3.7mH, RG = 25Ω, IAS = 12A.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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June 30, 2014
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