IRF7458 [INFINEON]
Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A); 功率MOSFET （ VDSS = 30V ， RDS（ON）最大值= 8.0mohm ，ID = 14A）
| 型号： | IRF7458 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A) |
| 文件： | 总8页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93892C
IRF7458
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
VDSS
30V
RDS(on) max
ID
14A
Converters with Synchronous Rectification
for Telecom and Industrial Use
8.0mΩ
l High Frequency Buck Converters for
Computer Processor Power
Benefits
A
A
D
1
2
3
4
8
7
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
S
S
D
6
5
S
D
D
G
SO-8
Top View
Absolute Maximum Ratings
Symbol
VDS
Parameter
Drain-Source Voltage
Max.
30
± 30
Units
V
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
14
ID @ TA = 70°C
11
A
IDM
110
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
1.6
0.02
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
–––
50
°C/W
Notes through are on page 8
www.irf.com
1
3/25/01
IRF7458
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
2.0
6.3 8.0
7.0 9.0
––– 4.0
VGS = 16V, ID = 14A
VGS = 10V, ID = 11A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 24V
mΩ
V
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -24V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 15V, ID = 11A
ID = 11A
26
––– –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
39
11
8.7
29
59
17
13
44
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 15V
VGS = 10V
VGS = 0V, VDS = 16V
10 –––
4.6 –––
22 –––
5.0 –––
VDD = 15V
ID = 11A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2410 –––
––– 1100 –––
––– 110 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
Max.
280
11
Units
mJ
IAR
–––
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
2.3
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 110
S
––– 0.82 1.3
––– 0.68 –––
V
TJ = 25°C, IS = 11A, VGS = 0V
TJ = 125°C, IS = 11A, VGS = 0V
TJ = 25°C, IF = 11A, VR= 20V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 51
––– 87 130
––– 52 78
––– 93 140
77
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 11A, VR=20V
nC di/dt = 100A/µs
Qrr
2
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IRF7458
1000
100
10
1000
100
10
VGS
16V
12V
10V
8.0V
6.0V
5.5V
5.0V
VGS
16V
12V
10V
8.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
14A
=
I
D
1.5
1.0
0.5
0.0
100
°
T = 150 C
J
°
T = 25 C
J
V
= 15V
DS
20µs PULSE WIDTH
V
= 10V
GS
10
4.5
5.0
5.5
6.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7458
20
16
12
8
100000
10000
1000
I
D
= 11A
V
= 0V,
f = 1 MHZ
GS
V
V
= 24V
= 15V
C
= C + C
,
C
ds
SHORTED
DS
DS
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
Coss
Crss
100
4
10
1
0
0
10
20
30
40
50
60
10
, Drain-to-Source Voltage (V)
100
Q
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
10us
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.8
1
0.1
0.2
0.1
1
10
100
0.6
1.0
1.4
2.2
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
Fig 6. On-Resistance Vs. Drain Current
IRF7458
16
12
8
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
DM
t
1
SINGLE PULSE
0.1
0.01
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7458
0.020
0.016
0.014
0.012
0.010
0.008
0.006
0.016
V
= 6.0V
= 16V
GS
0.012
0.008
0.004
I
= 14A
D
V
= 10V
GS
V
GS
4
6
8
10
12
14
16
0
20
40
60
80
100
120
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
800
V
DS
D.U.T.
I
-
D
V
G
TOP
5.0A
9.0A
BOTTOM 11A
V
GS
3mA
Charge
I
I
D
G
600
400
200
0
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V
(B R )D S S
DRIVER
L
t
p
V
DS
D.U.T
AS
R
G
+
V
DD
-
25
50
75
100
125
150
I
A
20V
°
Starting T , Junction Temperature ( C)
0.01
Ω
t
p
J
I
A S
Fig 14c. Maximum Avalanche Energy
Fig 14a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7458
SO-8 Package Details
INC HES
M ILLIM ETER S
DIM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
-
7
2
B -
A
.0532
.0040
.014
A1
B
8
1
6
3
5
4
5
H
E
A
C
D
E
.0075
.189
.0098
.196
0 .25 (.01 0)
M
A M
-
-
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 4 5°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C
-
0.1 0 (.0 04 )
6
C
8 X
L
8X
L
A 1
B
8 X
θ
0.2 5 (.010 )
M
C A S B S
R E C O M M E N D E D F O O T P R IN T
N O T E S :
0.7 2 (.028
8X
)
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
6.46 ( .2 55
)
1.78 (.0 70 )
8X
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O
A
S U B S TR A TE ..
6
1 .27
(
.05 0
)
3 X
SO-8 Part Marking
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7
IRF7458
SO-8 Tape and Reel
TERM INAL NUM BER
1
12.3
11.7
(
(
.484
.461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED DIRECTION
N OTES :
1. CO NTRO LLING DIM E NSIO N : M ILLIM ETER .
2. ALL DIM ENS ION S ARE SHO W N IN M ILL IM E TER S(INC HES).
3. OU TL IN E CO N FO RM S TO EIA-481
& EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566
12.40 ( .488
)
)
NOTES
:
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. OUTLINE CONFORM S TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25°C, L = 4.6mH
RG = 25Ω, IAS = 11A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
8
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