IRF7463TRPBF [INFINEON]
Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | IRF7463TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95248
SMPS MOSFET
IRF7463PbF
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
VDSS
30V
RDS(on) max
ID
14A
8mΩ
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
Benefits
A
A
D
1
2
3
4
8
7
S
S
S
G
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
D
6
5
D
D
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
± 12
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
14
11
A
110
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
1.6
0.02
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead ꢀ
Junction-to-Ambient ꢀ
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through ꢀ are on page 8
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1
10/12/04
IRF7463PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.6
6.0
7.0
8.0
9.5
20
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 11A
VGS = 2.7V, ID = 7.0A
VDS = VGS, ID = 250µA
mΩ
RDS(on)
Static Drain-to-Source On-Resistance
10.5
–––
–––
–––
–––
VGS(th)
IDSS
Gate Threshold Voltage
2.0
20
V
–––
–––
–––
–––
VDS = 24V, VGS = 0V
µA
Drain-to-Source Leakage Current
100
200
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
––– -200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 24V, ID = 11A
ID = 11A
41
––– –––
34 51
7.6 11.4
S
Qg
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 15V
VGS = 4.5V
12
21
18
32
VGS = 0V, VDS = 15V
VDD = 15V
16 –––
––– 138 –––
ID = 11A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
28 –––
6.5 –––
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 3150 –––
––– 1070 –––
––– 180 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
320
14
Units
mJ
A
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
2.3
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
110
p-n junction diode.
––– 0.52 1.3
––– 0.44 –––
V
TJ = 25°C, IS = 11A, VGS = 0V
TJ = 125°C, IS = 11A, VGS = 0V
TJ = 25°C, IF = 11A, VR=15V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 45
––– 65 100
––– 50 75
––– 80 120
70
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 11A, VR=15V
nC di/dt = 100A/µs
Qrr
2
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IRF7463PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
4.5V
3.5V
3.0V
2.7V
2.5V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.0V
BOTTOM 2.0V
1
2.0V
0.1
0.01
2.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000.00
14A
=
I
D
100.00
10.00
1.00
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
20µs PULSE WIDTH
V
=10V
0.10
GS
2.0
2.5
3.0
3.5
4.0
4.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7463PbF
10
8
5000
I
D
= 11A
V
C
= 0V,
f = 1 MHZ
GS
V
V
= 24V
= 15V
DS
DS
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
4000
3000
2000
1000
0
C
= C + C
oss
ds
gd
Ciss
6
4
Coss
2
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
10
0
0
10
20
30
40
50
1
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100
10
1
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.0
0.4
0.8
1.2
1.6
0.1
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7463PbF
RD
16
12
8
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
2
DM
t
1
0.1
t
SINGLE PULSE
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7463PbF
0.0080
0.0075
0.0070
0.0065
0.0060
0.016
0.012
0.008
0.004
V
= 4.5V
GS
I
= 14A
D
V
GS
= 10V
2.0
4.0
6.0
8.0
10.0
0
20
40
60
80
100
V
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
800
I
D
Q
G
TOP
6.3A
11A
BOTTOM 14A
50KΩ
.3µF
VGS
.2µF
12V
Q
GS
Q
GD
+
V
600
400
200
0
DS
D.U.T.
-
V
G
V
GS
3mA
Charge
I
I
D
G
Current Sampling Resistors
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
R
G
25
50
75
100
125
150
V
DD
-
I
A
AS
°
Starting T , Junction Temperature ( C)
20V
J
Ω
0.01
t
p
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7463PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PR INT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7463PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25°C, L = 3.3mH
RG = 25Ω, IAS = 14A.
ꢀ
Rθ is measured at TJ approximately 90°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
8
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