IRF7457PBF [INFINEON]
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 7.0mヘ , ID = 15A ); HEXFET功率MOSFET （ VDSS = 20V ， RDS （ ON）最大值= 7.0米ヘ， ID = 15A ）
| 型号： | IRF7457PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 7.0mヘ , ID = 15A ) |
| 文件： | 总8页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 95032
IRF7457PbF
HEXFET® Power MOSFET
RDS(on) max ID
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
VDSS
20V
7.0mΩ
15A
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
Benefits
A
A
1
2
3
4
8
7
D
S
S
S
G
l Ultra-Low RDS(on)
l Very Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
D
6
5
D
D
SO-8
Top View
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
15
12
A
120
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
1.6
0.02
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
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1
10/12/04
IRF7457PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
1.0
5.5
7.0
V
GS = 10V, ID = 15A
mΩ
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
8.0 10.5
––– 3.0
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
V
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
Drain-to-Source Leakage Current
µA
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 16V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 16V, ID = 12A
ID = 12A
30
––– –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
28
11
10
25
42
17
15
38
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 10V
VGS = 4.5V,
VGS = 0V, VDS = 10V
VDD = 10V,
14 –––
16 –––
16 –––
7.5 –––
ID = 12A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
Ciss
Coss
Crss
Input Capacitance
––– 3100 –––
––– 1600 –––
––– 270 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
265
Units
mJ
EAS
IAR
Avalanche Current
–––
15
A
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
2.5
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
120
S
––– 0.8 1.3
––– 0.67 –––
V
TJ = 25°C, IS = 12A, VGS = 0V
VSD
Diode Forward Voltage
TJ = 125°C, IS = 12A, VGS = 0V
TJ = 25°C, IF = 12A, VR= 15V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 50
––– 70 105
––– 50 75
––– 74 110
75
ns
Qrr
trr
Qrr
2
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 12A, VR=15V
nC di/dt = 100A/µs
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IRF7457PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
BOTTOM2.7V
2.7V
2.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 25 C
J
T = 150 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
15A
=
I
D
1.5
1.0
0.5
0.0
100
10
1
°
T = 150 C
J
°
T = 25 C
J
V
= 15V
DS
V
=10V
GS
20µs PULSE WIDTH
0.1
2.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
3.5
4.0 4.5
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7457PbF
5000
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I
D
=
12A
C
= C + C
iss
gs
gd ,
V
= 10V
C
= C
DS
rss
gd
C
= C + C
4000
3000
2000
1000
0
oss
ds
gd
C
iss
6
C
4
oss
2
C
rss
0
0
10
20
30
40
50
60
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.1
0.8
1.4
2.0
2.6
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7457PbF
RD
16
13
10
6
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
3
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
2
DM
t
1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7457PbF
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
VGS = 4.5V
I
= 15A
D
VGS = 10V
3.0
3.5
4.0
4.5
5.0
5.5
0
20
40
60
80
100
120
V
Gate -to -Source Voltage (V)
I
, Drain Current ( A )
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 14. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
DS
D.U.T.
-
700
V
G
I
D
V
GS
TOP
5.4A
9.6A
12A
3mA
Charge
600
500
400
300
200
100
0
BOTTOM
I
I
D
G
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
25
50
75
100
125
150
V
DD
-
I
A
°
Starting T , Junction Temperature ( C)
J
20V
Ω
0.01
t
p
I
AS
Fig 14c. Maximum Avalanche Energy
Fig 14a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7457PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MIN MAX
.0532 .0688
MILLIMETERS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
0.25 [.010]
A
.1497 .1574
.050 BASIC
4
e
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PR INT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7457PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25°C, L = 3.7mH
RG = 25Ω, IAS = 12A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
8
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