IRF7103Q [INFINEON]
Power MOSFET(Vdss=50V); 功率MOSFET （ VDSS = 50V ）
| 型号： | IRF7103Q |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=50V) |
| 文件： | 总10页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93944C
IRF7103Q
AUTOMOTIVE MOSFET
Typical Applications
HEXFET® Power MOSFET
●
●
●
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection
Power Doors, Windows & Seats
VDSS
50V
RDS(on) max (mΩ)
130@VGS = 10V
ID
3.0A
Benefits
●
●
●
●
●
●
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
200@VGS = 4.5V
1.5A
1
2
3
4
8
S1
G 1
D1
Description
7
D 1
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
6
S2
D2
5
G 2
D 2
SO-8
Top View
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8candramaticallyreduceboardspaceandisalsoavailable
in Tape & Reel.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
3.0
2.5
A
25
PD @TC = 25°C
Power Dissipation
2.4
W
mW/°C
V
Linear Derating Factor
16
VGS
Gate-to-Source Voltage
± 20
22
EAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
IAR
See Fig.16c, 16d, 19, 20
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
mJ
dv/dt
TJ, TSTG
12
V/ns
°C
Junction and Storage Temperature Range
-55 to + 175
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
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1
03/14/02
IRF7103Q
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
50 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 130
––– ––– 200
1.0 ––– 3.0
3.4 ––– –––
––– ––– 2.0
––– ––– 25
––– ––– 100
––– ––– -100
VGS = 10V, ID = 3.0A
VGS = 4.5V, ID = 1.5A
VDS = VGS, ID = 250µA
VDS = 15V, ID = 3.0A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = 40V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 40V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
VGS = -20V
ID = 2.0A
Qg
––– 10
15
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 1.2 –––
––– 2.8 –––
––– 5.1 –––
––– 1.7 –––
––– 15 –––
––– 2.3 –––
––– 255 –––
––– 69 –––
––– 29 –––
nC VDS = 40V
VGS = 10V
VDD = 25V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 25Ω
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
–––
–––
3.0
12
–––
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
TJ = 25°C, IS = 1.5A, VGS = 0V
TJ = 25°C, IF = 1.5A
––– 35
––– 45
53
67
ns
Qrr
nC di/dt = 100A/µs
Notes:
Starting TJ = 25°C, L = 4.9mH
RG = 25Ω, IAS = 3.0A. (See Figure 12).
ꢀISD ≤ 2.0A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
,
Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
2
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IRF7103Q
100
10
1
100
10
1
VGS
15V
10V
VGS
15V
10V
TOP
TOP
8.0V
8.0V
7.0V
6.0V
5.5V
5.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100.00
10.00
1.00
2.5
3.0A
=
I
D
T
= 175°C
J
2.0
1.5
1.0
0.5
0.0
T
= 25°C
J
V
= 25V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
3.0
6.0
9.0
12.0
15.0
°
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7103Q
12
10000
I
=
2.0A
V
GS
= 0V,
f = 1 MHZ
D
V
V
V
=
=
=
40V
25V
10V
DS
DS
DS
C
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
9
1000
100
10
6
Ciss
Coss
Crss
3
0
0
3
6
9
12
1
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 175 C
J
1
1
100µsec
1msec
°
T = 25 C
J
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
100
V
= 0 V
GS
0.1
0.4
0.6
0.8
1.0
1.2
0
1
10
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7103Q
3.0
2.4
1.8
1.2
0.6
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Case Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
SINGLE PULSE
t
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7103Q
2.500
2.000
1.500
1.000
0.500
0.000
0.15
0.14
0.13
0.12
0.11
0.10
0.09
V
= 4.5V
GS
I
= 3.0A
D
V
= 10V
GS
4.5
6.0
-V
7.5
9.0
10.5
12.0
13.5
15.0
0
5
10 15 20 25 30 35 40
, Drain Current (A)
Gate -to -Source Voltage (V)
I
GS,
D
Fig 13. Typical On-Resistance Vs. Drain
Fig 12. Typical On-Resistance Vs. Gate
Current
Voltage
70
60
50
40
30
20
10
0
2.0
1.8
I
= 250µA
D
1.5
1.3
1.0
-75 -50 -25
0
25
50
75 100 125 150
1.00
10.00
100.00
1000.00
T , Temperature ( °C )
Time (sec)
J
Fig 15. Typical Power Vs. Time
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
6
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IRF7103Q
60
48
36
24
12
0
I
D
TOP
1.2A
2.5A
BOTTOM 3.0A
1 5V
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
D D
-
I
A
20V
0.01
t
Ω
p
Fig 16c. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
Fig 16a. Maximum Avalanche Energy
t
p
Vs. Drain Current
I
AS
Fig 16d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
VGS
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 18. Basic Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
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7
IRF7103Q
1000
Duty Cycle = Single Pulse
100
10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
∆
avalanche losses
0.01
1
0.05
0.10
0.1
0.01
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 19. Typical Avalanche Current Vs.Pulsewidth
25
20
15
10
5
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 3.0A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
Starting T , Junction Temperature (°C)
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC
Fig 20. Maximum Avalanche Energy
Iav = 2∆T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
8
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IRF7103Q
SO-8 Package Details
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
.050 BASIC
1.27 BASIC
0.635 BASIC
e 1 .025 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
FOOTPRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
YWW
XXXX
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
F7101
PART NUMBER
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9
IRF7103Q
SO-8 Tape and Reel
T E R M IN A L N U M B E R
1
12.3 ( .48 4
11.7 ( .46 1
)
)
8.1 ( .31 8
7.9 ( .31 2
)
)
FE E D D IR E C TIO N
N O TE S :
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.00
(12.992)
M AX .
14.40 ( .5 66
12.40 ( .4 88
)
)
N O TE S
1. C O N T R O LLIN G D IM E N S IO N : M ILLIM E T ER .
2. O U TL IN E C O N FO R M S T O E IA -481 E IA -541.
:
&
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/02
10
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