IRF7103TR [INFINEON]
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | IRF7103TR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1095B
IRF7103
HEXFET® Power MOSFET
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
1
2
8
D1
S1
VDSS = 50V
7
G 1
D 1
3
6
S2
D2
RDS(on) = 0.130Ω
4
5
D 2
G 2
ID = 3.0A
Top View
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
3.0
2.3
A
10
PD @TC = 25°C
Power Dissipation
2.0
W
W/°C
V
Linear Derating Factor
0.016
± 20
VGS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery dv/dt
4.5
V/nS
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
–––
–––
62.5
°C/W
8/25/97
IRF7103
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
50 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.11 0.13
––– 0.16 0.20
1.0 ––– 3.0
––– 3.8 –––
––– ––– 2.0
––– ––– 25
––– ––– 100
––– ––– -100
VGS = 10V, ID = 3.0A
VGS = 4.5V, ID = 1.5A
VDS = VGS, ID = 250µA
VDS = 15V, ID = 3.0A
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VGS = 20V
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = - 20V
Qg
––– 12
30
ID = 2.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 1.2 –––
––– 3.5 –––
––– 9.0 20
––– 8.0 20
nC VDS = 25V
VGS = 10V
VDD = 25V
RiseTime
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
––– 45
––– 25
70
50
RG = 6.0Ω
RD = 25Ω
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.0 –––
––– 6.0 –––
Between lead,6mm(0.25in.)
nH
pF
G
from package and center
of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 290 –––
––– 140 –––
––– 37 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
IS
––– ––– 2.0
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 12
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.2
––– 70 100
––– 110 170
V
TJ = 25°C, IS = 1.5A, VGS = 0V
ns
TJ = 25°C, IF = 1.5A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ISD ≤ 1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7103
IRF7103
IRF7103
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
IRF7103
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
.3µF
12V
10V
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
G
V
GS
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
Fig 12a. Basic Gate Charge Waveform
IRF7103
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
*
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13.ForN-ChannelHEXFETS
IRF7103
Package Outline
SO8Outline
INCHES
MILLIMETERS
DIM
D
MIN
MAX
MIN
MAX
1.75
5
-
B -
A
.0532
.0040
.014
.0688
.0098
.018
1.35
0.10
0.36
0.19
4.80
A1
B
0.25
0.46
0.25
4.98
3.99
8
1
7
6
3
5
4
5
H
E
A
-
-
0.25 (.010)
M
A
M
C
D
E
.0075
.189
.0098
.196
2
.150
.157
3.81
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 45°
6X
e 1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
-
C -
0.10 (.004)
6
C
8X
L
8X
A1
L
B
8X
θ
0.25 (.010)
M
C A S B S
R E C O M M E N D E D F O O T P R I N T
N O T E S :
1. DIMENSIONING AND TOLERANCING PER ANSI Y14. 5M-1982.
2. CONTROLLING DIMENSION INCH.
0.72 (.028
8X
)
:
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46
(
.255
)
1. 78 (. 070)
8X
5
D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S
MOLD PROTRUSIONS NOT TO EXCEED 0. 25 (. 006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO
A
SUBSTRATE..
6
1.27
(
.050
)
3X
Part Marking Information
SO8
EXAM PLE : THIS IS AN IRF7 101
DATE CODE (YW W )
LAST DIGIT OF THE YEAR
W EEK
Y
=
W W
=
3 12
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7 101
W AFER
LOT CODE
PART NUM BER
TOP
(LAST
4 DIGITS)
BOTTOM
IRF7103
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R
1
12 .3
11 .7
(
(
.48 4
.46 1
)
)
8 .1
7 .9
(
(
.3 18
.3 12
)
)
F E ED D IR E C T IO N
N OTES:
1 . CON TRO LL IN G D IM EN SION : M ILLIM ETER.
2 . ALL DIM ENSIO NS AR E SHOW N IN M ILL IM ETER S(INC HES).
3 . OUTL IN E C ONFO RM S TO EIA-48 1 & EIA-5 41 .
33 0. 00
(12 .99 2)
M A X.
1 4. 40
1 2. 40
(
(
.5 66
.4 88
)
)
N O T ES
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 E IA -54 1.
:
&
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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