IRF7103TRPBF [INFINEON]
adavanced process technology; ?????????? adavanced工艺技术
| 型号： | IRF7103TRPBF |
| 厂家： | 
Infineon |
| 描述： | adavanced process technology |
| 文件： | 总10页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -95037B
IRF7103PbF
HEXFET® Power MOSFET
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
1
2
8
S1
G1
D1
VDSS = 50V
7
D1
3
4
6
S2
G2
D2
RDS(on) = 0.130Ω
5
D2
ID = 3.0A
Top View
l Lead-Free
Description
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
3.0
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
2.3
10
PD @TA = 25°C
Power Dissipation
2.0
W
W/°C
V
Linear Derating Factor
0.016
± 20
4.5
VGS
Gate-to-Source Voltage
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
V/nS
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
62.5
°C/W
02/09/10
IRF7103PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
50
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.049 V/°C Reference to 25°C, ID = 1mA
0.11 0.13
0.16 0.20
1.0 3.0
3.8
2.0
25
100
-100
VGS = 10V, ID = 3.0A
VGS = 4.5V, ID = 1.5A
VDS = VGS, ID = 250µA
VDS = 15V, ID = 3.0A
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VGS = 20V
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = - 20V
Qg
Qgs
Qgd
td(on)
tr
12
30
ID = 2.0A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
1.2
3.5
nC VDS = 25V
VGS = 10V
VDD = 25V
9.0
8.0
45
25
20
20
70
50
RiseTime
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 6.0Ω
RD = 25Ω
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
4.0
6.0
Between lead,6mm(0.25in.)
nH
pF
G
from package and center
of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
290
140
37
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
S
IS
2.0
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
12
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
1.2
70 100
110 170
V
TJ = 25°C, IS = 1.5A, VGS = 0V
ns
TJ = 25°C, IF = 1.5A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ISD ≤ 1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7103PbF
IRF7103PbF
IRF7103PbF
TA, AmbientTemperature(°C)
Fig 9. Maximum Drain Current Vs.
AmbientTemperature
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
IRF7103PbF
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
.3µF
12V
10V
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
G
V
GS
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
Fig 12a. Basic Gate Charge Waveform
IRF7103PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
*
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig13. ForN-ChannelHEXFETS
IRF7103PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF7103PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2010
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
International Rectifier:
IRF7103PBF IRF7103TRPBF
相关型号：
IRF7103UPBF
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
INFINEON
IRF7105PBF-1
Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON
©2020 ICPDF网 联系我们和版权申明