IRF7103QTRPBF [INFINEON]
HEXFET® Power MOSFET; HEXFET®功率MOSFET
| 型号： | IRF7103QTRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总10页 (文件大小：259K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96101C
IRF7103QPbF
HEXFET® Power MOSFET
Benefits
VDSS
50V
RDS(on) max (mW)
130@VGS = 10V
ID
3.0A
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
200@VGS = 4.5V
1.5A
1
2
3
4
8
S1
G1
D1
7
Description
D1
This HEXFET® Power MOSFET's in a Dual SO-8 package
utilizethelastestprocessingtechniquestoachieveextremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
6
S2
D2
5
G2
D2
SO-8
Top View
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Absolute Maximum Ratings
Parameter
Max.
3.0
Units
A
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
I
I
I
@ TA = 25°C
@ TA = 70°C
D
D
2.5
25
DM
Power Dissipation
P
@TA = 25°C
2.4
W
D
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
16
± 20
W/°C
V
VGS
EAS
IAR
22
mJ
A
Avalanche Current
See Fig. 16c, 16d, 19, 20
Repetitive Avalanche Energy
EAR
mJ
dv/dt
Peak Diode Recovery dv/dt
Operating Junction and
12
V/ns
°C
T
-55 to + 175
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
RθJL
RθJA
–––
62.5
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1
08/02/10
IRF7103QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
50 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 130
––– ––– 200
1.0 ––– 3.0
3.4 ––– –––
––– ––– 2.0
––– ––– 25
––– ––– 100
––– ––– -100
VGS = 10V, ID = 3.0A
VGS = 4.5V, ID = 1.5A
VDS = VGS, ID = 250µA
VDS = 15V, ID = 3.0A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = 40V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 40V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
IGSS
VGS = -20V
ID = 2.0A
Qg
––– 10
15
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 1.2 –––
––– 2.8 –––
––– 5.1 –––
––– 1.7 –––
––– 15 –––
––– 2.3 –––
––– 255 –––
––– 69 –––
––– 29 –––
nC VDS = 40V
VGS = 10V
VDD = 25V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 25Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
S
IS
MOSFET symbol
showing the
3.0
12
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
TJ = 25°C, IS = 1.5A, VGS = 0V
TJ = 25°C, IF = 1.5A
––– 35
––– 45
53
67
ns
Qrr
nC di/dt = 100A/µs
Notes:
Starting TJ = 25°C, L = 4.9mH
RG = 25Ω, IAS = 3.0A. (See Figure 12).
ꢀ ISD ≤ 2.0A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
,
Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
2
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IRF7103QPbF
100
10
1
100
10
1
VGS
15V
10V
VGS
15V
10V
TOP
TOP
8.0V
8.0V
7.0V
6.0V
5.5V
5.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100.00
10.00
1.00
2.5
3.0A
=
I
D
T
= 175°C
J
2.0
1.5
1.0
0.5
0.0
T
V
= 25°C
J
= 25V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
3.0
6.0
9.0
12.0
15.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7103QPbF
10000
12
9
I
V
C
= 0V,
f = 1 MHZ
= 2.0A
D
GS
V
V
V
= 40V
= 25V
= 10V
DS
DS
DS
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
1000
100
10
Ciss
6
Coss
Crss
3
0
1
10
100
0
3
6
9
12
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 175 C
J
10
1
1
100µsec
1msec
°
T = 25 C
J
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
100
V
= 0 V
GS
0.1
0.4
0.6
0.8
1.0
1.2
0
1
10
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7103QPbF
3.0
2.4
1.8
1.2
0.6
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Case Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7103QPbF
0.15
0.14
0.13
0.12
2.500
2.000
1.500
1.000
0.500
0.000
V
= 4.5V
GS
I
= 3.0A
0.11
0.10
0.09
D
V
= 10V
GS
4.5
6.0
-V
7.5
9.0
10.5
12.0
13.5
15.0
0
5
10 15 20 25 30 35 40
, Drain Current (A)
Gate -to -Source Voltage (V)
GS,
I
D
Fig 13. Typical On-Resistance Vs. Drain
Fig 12. Typical On-Resistance Vs. Gate
Current
Voltage
2.0
1.8
70
60
50
40
30
20
10
0
I
= 250µA
D
1.5
1.3
1.0
-75 -50 -25
0
25
50
75 100 125 150
1.00
10.00
100.00
Time (sec)
1000.00
T , Temperature ( °C )
J
Fig 15. Typical Power Vs. Time
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
6
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IRF7103QPbF
60
48
36
24
12
0
I
D
TOP
1.2A
2.5A
BOTTOM 3.0A
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 16c. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
Fig 16a. Maximum Avalanche Energy
t
p
Vs. Drain Current
I
AS
Fig 16d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
VGS
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 18. Basic Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
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7
IRF7103QPbF
1000
Duty Cycle = Single Pulse
100
10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
avalanche losses
Tj = 25°C due to
∆
0.01
1
0.05
0.10
0.1
0.01
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 19. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
25
20
15
10
5
TOP
BOTTOM 10% Duty Cycle
= 3.0A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 20. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
8
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IRF7103QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
.0532
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TOJEDECOUTLINE MS-012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS .
MOLD PROTRUSIONS NOT TOEXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS .
MOLD PROTRUSIONS NOT TOEXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WE EK
YWW
XXXX
F7101
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. ForthemostcurrentdrawingpleaserefertoIRwebsiteathttp://www.irf.com/package/
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9
IRF7103QPbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2010
10
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