IRF6665 [INFINEON]
DIGITAL AUDIO MOSFET; 数字音频MOSFET
| 型号： | IRF6665 |
| 厂家： | 
Infineon |
| 描述： | DIGITAL AUDIO MOSFET |
| 文件： | 总8页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96900
DIGITAL AUDIO MOSFET
IRF6665
Features
Key Parameters
• Latest MOSFET Silicon technology
VDS
100
V
• Key parameters optimized for Class-D audio amplifier applications
• Low RDS(on) for improved efficiency
m:
nC
RDS(on) typ. @ VGS = 10V
Qg typ.
53
8.7
1.9
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
RG(int) typ.
• Low package stray inductance for reduced ringing and lower EMI
• Can deliver up to 100W per channel into 8Ω with no heatsink
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· Lead and Bromide Free
DirectFET ISOMETRIC
SH
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ
SX
ST
SH
MQ
MX
MT
MN
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing
techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate
resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and
resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage
ringing that accompanies fast current transients. The DirectFET TM package is compatible with existing layout geometries used in power
applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing method and processes. The DirectFET TM package also allows dual sided cooling to maximize thermal
transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient,
robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
100
Units
V
VDS
VGS
Gate-to-Source Voltage
± 20
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
@ TC = 25°C
@ T = 25°C
A
19
4.2
D
D
A
I
I
@ T = 70°C
A
3.4
34
D
DM
P
P
P
@TC = 25°C
@TA = 25°C
@TA = 70°C
Maximum Power Dissipation
Power Dissipation
42
2.2
1.4
W
D
D
D
Power Dissipation
Linear Derating Factor
Operating Junction and
0.017
-40 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Ambient
Typ.
Max.
Units
Rθ
JA
–––
12.5
20
58
°C/W
Rθ
JA
Junction-to-Ambient
–––
–––
3.0
Rθ
JA
Junction-to-Ambient
Rθ
JC
Junction-to-Case
–––
1.4
Rθ
J-PCB
Junction-to-PCB Mounted
–––
Notes through are on page 2
www.irf.com
1
10/11/04
IRF6665
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
GS = 10V, ID = 5.0A
VDS = VGS, ID = 250µA
Parameter
Min.
100
–––
–––
3.0
Typ.
–––
0.12
53
Max.
–––
–––
62
Units
V
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V/°C
mΩ
V
V
VGS(th)
–––
–––
–––
–––
–––
1.9
5.0
V
V
V
V
DS = 100V, VGS = 0V
DS = 80V, VGS = 0V, TJ = 125°C
GS = 20V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
20
µA
250
100
-100
2.9
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
GS = -20V
RG(int)
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Conditions
VDS = 10V, ID = 5.0A
Parameter
Forward Transconductance
Total Gate Charge
Min.
6.6
Typ.
–––
8.7
Max.
–––
11.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
gfs
Qg
VDS = 50V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
VGS = 10V
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Turn-On Delay Time
2.1
Qgs2
Qgd
ID = 5.0A
0.58
2.8
nC
See Fig.6 and 16
Qgodr
3.2
Qsw
td(on)
tr
td(off)
tf
3.38
7.4
VDD = 50V
I
D = 5.0A
Rise Time
2.8
14
RG = 6.0Ω
Turn-Off Delay Time
ns
VGS = 10V
VGS = 0V
Fall Time
4.3
530
110
29
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
V
DS = 25V
Output Capacitance
ƒ = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
pF
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
510
67
V
V
GS = 0V, VDS = 80V, ƒ = 1.0MHz
GS = 0V, VDS = 0V to 80V
Output Capacitance
Coss eff.
Effective Output Capacitance
130
Avalanche Characteristics
Typ.
–––
–––
Max.
11
Parameter
Units
mJ
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
5.0
A
Diode Characteristics
Conditions
Parameter
Min.
Typ.
Max.
Units
D
S
MOSFET symbol
I
I
Continuous Source Current
–––
–––
4.2
S
showing the
(Body Diode)
A
G
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
34
SM
T = 25°C, I = 5.0A, V = 0V
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
31
1.3
–––
–––
V
J
S
GS
SD
T = 25°C, I = 5.0A, VDD = 25V
ns
nC
J
F
rr
di/dt = 100A/µs
Q
37
rr
Notes:
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
TC measured with thermal couple mounted to top
(Drain) of part.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A.
Surface mounted on 1 in. square Cu board.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same
R is measured at TJ of approximately 90°C.
θ
Based on testing done using a typical device & evaluation board
at Vbus=±45V, fSW=400KHz, and TA=25°C. The delta case
temperature ∆TC is 55°C.
charging time as Coss while VDS is rising from 0 to 80% VDSS
.
2
www.irf.com
IRF6665
100
10
1
100
10
1
VGS
15V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
BOTTOM
BOTTOM
6.0V
6.0V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
I
= 5.0A
D
V
= 10V
GS
10
1
1.5
1.0
0.5
T
T
T
= -40°C
= 25°C
= 150°C
J
J
J
V
= 25V
DS
≤
60µs PULSE WIDTH
10
, Gate-to-Source Voltage (V)
0.1
2
4
6
8
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
12.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I
= 5.0A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
10.0
8.0
6.0
4.0
2.0
0.0
rss
oss
gd
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
= C + C
ds
gd
C
iss
C
oss
C
rss
10
0
2
4
6
8
10
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF6665
100
1000
100
10
Tc = 25°C
Tj = 150°C
Single Pulse
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
10
T
T
T
= -40°C
= 25°C
= 150°C
1msec
10msec
1
J
J
J
DC
0.1
0.01
V
= 0V
GS
1
0.4
0.6
V
0.8
1.0
1.2
1.4
1.6
0
1
10
100
1000
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
4
3
2
1
0
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
-75 -50 -25
0
25
50
75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
100
D = 0.50
0.20
10
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
Ri (°C/W) τi (sec)
τ
τ
J τJ
τ
0.02
0.01
1.6195
2.1406
0.000126
0.001354
Cτ
1
0.1
τ
1 τ1
τ
τ
τ
2τ2
3τ3
4τ4
5τ5
22.2887 0.375850
20.0457 7.410000
Ci= τi/Ri
Ci= τi/Ri
11.9144
99
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF6665
120
100
80
200
180
160
140
120
100
80
I
= 5.0A
D
T
= 125°C
J
T
= 125°C
J
T
= 25°C
60
J
60
40
T
= 25°C
12
J
Vgs = 10V
20
40
0
0
2
4
6
8
10
4
6
8
10
14
16
18
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
50
15V
I
D
TOP
0.86A
1.3A
DRIVER
L
40
30
20
10
0
V
DS
BOTTOM 5.0A
D.U.T
AS
R
G
+
-
V
DD
I
A
V
20V
GS
0.01Ω
t
p
Fig 14a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14c. Maximum Avalanche Energy vs. Drain Current
I
AS
Fig 14b. Unclamped Inductive Waveforms
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
td(off)
tr
tf
Fig 15b. Switching Time Waveforms
Fig 15a. Switching Time Test Circuit
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5
IRF6665
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
V
GS
Vgs(th)
3mA
I
I
D
G
Current Sampling Resistors
Qgs1
Qgs2
Qgd
Qgodr
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
Driver Gate Drive
P.W.
Period
D =
D.U.T
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• di/dt controlled by RG
RG
+
-
Body Diode
Inductor Current
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, SH Outline
(Small Size Can, H-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This
includes all recommendations for stencil and substrate designs.
1- Drain
2- Drain
3- Gate
4- Source
5- Drain
6- Drain
1
2
5
4
3
6
6
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IRF6665
DirectFET Outline Dimension, SH Outline
(Small Size Can, H-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This
includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
MIN
METRIC
MAX
CODE
MIN
4.75
3.70
2.75
0.35
0.58
0.58
0.63
0.83
0.99
2.29
0.48
0.03
0.08
MAX
0.191
0.156
0.112
0.018
0.024
0.024
0.026
0.034
0.041
0.092
0.023
0.003
0.007
Note: Controlling
dimensions are in mm.
4.85
3.95
2.85
0.45
0.62
0.187
0.146
0.108
0.014
0.023
A
B
C
D
E
F
0.62 0.023
0.67
0.87
1.03
0.025
0.033
0.039
G
H
K
L
2.33 0.090
0.58 0.019
M
N
P
0.08
0.17
0.001
0.003
DirectFET Part Marking
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7
IRF6665
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6665). For 1000 parts on 7" reel,
order IRF6665TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN
MAX
IMPERIAL
CODE
MIN
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Loaded Tape Feed Direction
DIMENSIONS
METRIC
MAX
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
MIN
7.90
3.90
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
0.319
0.161
0.484
0.219
0.209
0.264
N.C
8.10
4.10
11.90
5.45
5.10
6.50
1.50
1.50
12.30
5.55
5.30
6.70
N.C
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
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相关型号：
IRF6665TR1PBF
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
INFINEON
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