IRF6674PBF_技术文档

PD - 97133

IRF6674TRPbF

DirectFET Power MOSFET

Typical values (unless otherwise specified)

l RoHS Compliant

V_DSS

V_GS

R_DS(on)

9.0mΩ@ 10V

V_gs(th)

l Lead-Free (Qualified up to 260°C Reflow)

l Application Specific MOSFETs

60V max ±20V max

Q_{g tot}

Q_gd

l Ideal for High Performance Isolated Converter

Primary Switch Socket

l Optimized for Synchronous Rectification

24nC

8.3nC

4.0V

l Low Conduction Losses

l High Cdv/dt Immunity

l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

DirectFET ISOMETRIC

MZ

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SH

SJ

SP

MZ

MN

Description

The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve

the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application noteAN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6674PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input

voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency

and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-

DC converters.

Absolute Maximum Ratings

Max.

60

Parameter

Units

V

V_DS

Drain-to-Source Voltage

±20

13.4

10.7

67

Gate-to-Source Voltage

V

GS

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

I

@ T_A= 25°C

D

A

@ T_A= 70°C

@ T_C= 25°C

134

98

DM

E_AS

I_AS

Single Pulse Avalanche Energy

Avalanche Current

mJ

A

13.4

14

12

10

8

50

40

30

20

10

0

I = 13.4A

D

V

= 48V

= 30V

I

= 13.4A

DS

D

V

DS

6

T

= 125°C

J

4

2

T

= 25°C

14

J

0

4

6

8

10

12

16

0

10

20

30

V

, Gate-to-Source Voltage (V)

GS

Q

Total Gate Charge (nC)

G

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

Notes:

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.272mH, R_G= 25Ω, I_AS= 13.4A.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

www.irf.com

1

4/24/08

IRF6674TRPbF

Electrical Characteristic @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= 250μA

Parameter

Min. Typ. Max. Units

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

60

–––

0.07

9.0

–––

11

V

V/°C

mΩ

V

Reference to 25°C, I_D= 1mA

ΔΒV_DSS/ΔT_J

R_DS(on)

–––

3.0

V_GS= 10V, I_D= 13.4A i

V_DS= V_GS, I_D= 100μA

V_GS(th)

4.0

4.9

ΔV_GS(th)/ΔT_J

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

16

-11

–––

24

––– mV/°C

V

_DS= 60V, V_GS= 0V

20

250

100

-100

–––

36

μA

nA

S

V_DS= 48V, V_GS= 0V, T_J= 125°C

V

_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

_GS= -20V

_DS= 25V, I_D= 13.4A

gfs

Q_g

–––

V

_DS= 30V

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

R_G

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

5.4

–––

12

V_GS= 10V

I_D= 13.4A

See Fig. 15

1.9

nC

8.3

8.4

–––

10.2

14

V_DS= 16V, V_GS= 0V

nC

Gate Resistance

1.0

Ω

V_DD= 30V, V_GS= 10Vꢁi

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

7.0

I_D= 13.4A

Rise Time

12

R_G= 6.2 Ω

Turn-Off Delay Time

12

ns

Fall Time

8.7

V_GS= 0V

C_iss

C_oss

C_rss

C_oss

Input Capacitance

1350

390

105

1580

290

V_DS= 25V

Output Capacitance

pF

ƒ = 1.0MHz

Reverse Transfer Capacitance

Output Capacitance

V_GS= 0V, V_DS= 1.0V, f=1.0MHz

V_GS= 0V, V_DS= 48V, f=1.0MHz

Output Capacitance

Diode Characteristics

Conditions

Parameter

Min. Typ. Max. Units

I_S

MOSFET symbol

Continuous Source Current

(Body Diode) T_J= 25°C

Pulsed Source Current

(Body Diode)ꢁg

–––

67

D

showing the

A

G

I_SM

integral reverse

p-n junction diode.

–––

134

S

T_J= 25°C, I_S= 13.4A, V_GS= 0V i

T_J= 25°C, I_F= 13.4A, V_DD= 50V

di/dt = 100A/μs c

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

32

1.3

48

54

V

ns

nC

Q_rr

36

Notes:

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

2

www.irf.com

IRF6674TRPbF

Absolute Maximum Ratings

Max.

Parameter

Units

3.6

Power Dissipation

W

P

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

D

P

J

2.3

89

270

Peak Soldering Temperature

Operating Junction and

°C

T

-40 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

20

Max.

35

Units

R_θ

Junction-to-Ambient

JA

Junction-to-Ambient

Junction-to-Case

–––

1.4

JA

°C/W

JA

–––

1.0

JC

Junction-to-PCB Mounted

–––

J-PCB

10

1

D = 0.50

0.20

0.10

0.05

0.1

R₁

R₂

R₃

R₄

τι (sec)

Ri (°C/W)

R₄

τ_J

0.023002 0.000008

0.269754 0.000072

0.770575 0.001409

0.337715 0.005778

τ_C

τ_J

τ₁

0.02

0.01

τ

³τ₃

τ₄

²τ₂

τ₁

τ₄

0.01

Ci= τi/Ri

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = Pdm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Notes:

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

Surface mounted on 1 in. square Cu board, steady state.

T_Cmeasured with thermocouple incontact with top (Drain) of part.

Used double sided cooling, mounting pad with large heatsink.

R is measured at T_Jof approximately 90°C.

θ

Surface mounted on 1 in. square Cu

board (still air).

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink. (still air)

www.irf.com

3

IRF6674TRPbF

100

10

1

VGS

15V

10V

8.0V

7.0V

6.0V

TOP

6.0V

BOTTOM

10

VGS

15V

TOP

10V

6.0V

8.0V

7.0V

6.0V

BOTTOM

≤60μs PULSE WIDTH

Tj = 150°C

≤60μs PULSE WIDTH

Tj = 25°C

1

0.1

1

10

0.1

1

10

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 4. Typical Output Characteristics

Fig 5. Typical Output Characteristics

2.0

1.5

1.0

0.5

1000

I

= 13.4A

= 10V

D

V

GS

100

T

= 150°C

= 25°C

= -40°C

J

10

1

V

= 10V

DS

≤60μs PULSE WIDTH

0.1

2.0

4.0

6.0

8.0

10.0

12.0

-60 -40 -20

T

0

20 40 60 80 100 120 140 160

V

, Gate-to-Source Voltage (V)

GS

, Junction Temperature (°C)

J

Fig 6. Typical Transfer Characteristics

Fig 7. Normalized On-Resistance vs. Temperature

100000

10000

1000

100

50

V

C

= 0V,

f = 1 MHZ

GS

T

= 25°C

A

= C + C , C SHORTED

iss

gs

gd ds

C

= C

rss

gd

40

30

20

10

0

C

= C + C

oss

ds

gd

V

= 7.0V

GS

= 8.0V

= 10V

= 15V

C

iss

C

oss

C

rss

10

0

20

40

60

80

100

1

10

, Drain-to-Source Voltage (V)

100

I , Drain Current (A)

V

D

DS

Fig 9. Typical On-Resistance vs. Drain Current

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

4

www.irf.com

IRF6674TRPbF

1000

100

10

1

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

100μsec

T

= 150°C

= 25°C

= -40°C

J

1msec

1

T

= 25°C

10msec

C

Tj = 150°C

Single Pulse

V

= 0V

GS

0.1

0

0.1

1

10

100

0.2

0.4

V

0.6

0.8

1.0

1.2

1.4

, Source-to-Drain Voltage (V)

V

, Drain-toSource Voltage (V)

SD

DS

Fig11. Maximum Safe Operating Area

Fig 10. Typical Source-Drain Diode Forward Voltage

14

12

10

8

5.0

4.5

4.0

3.5

3.0

2.5

2.0

I

= 250μA

= 100μA

D

6

4

2

0

25

50

T

75

100

125

150

-75 -50 -25

0

25

, Temperature ( °C )

J

50

75 100 125 150

, Ambient Temperature (°C)

T

J

Fig 13. Typical Threshold Voltage vs.

Fig 12. Maximum Drain Current vs. Ambient Temperature

Junction Temperature

400

I

D

TOP

4.5A

9.3A

26.8A

300

200

100

0

BOTTOM

25

50

75

100

125

150

Starting T , Junction Temperature (°C)

J

Fig 14. Maximum Avalanche Energy vs. Drain Current

www.irf.com

5

IRF6674TRPbF

Id

Vds

Vgs

L

VCC

DUT

0

Vgs(th)

20K

1K

Qgs1

Qgs2

Qgodr

Qgd

Fig 15a. Gate Charge Test Circuit

Fig 15b. Gate Charge Waveform

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

V_GS

R

G

V

DD

-

I

A

20V

0.01

Ω

t

p

I

AS

Fig 16b. Unclamped Inductive Waveforms

Fig 16a. Unclamped Inductive Test Circuit

R_D

V_DS

V

DS

90%

V_GS

D.U.T.

R_G

+

V_DD

-

10V

V_GS

10%

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

V

GS

t

r

t

f

d(on)

d(off)

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

6

www.irf.com

V

IRF6674TRPbF

Driver Gate Drive

P.W.

D =

Period

D.U.T

Period

+

_V***

=10V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

-

+

di/dt

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

*

V_DD

**

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple

≤ 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** V_GS= 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET^®Power MOSFETs

DirectFET Substrate and PCB Layout, MZ Outline

(Medium Size Can, Z-Designation).

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations

G=GATE

D=DRAIN

S=SOURCE

D

S

G

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

www.irf.com

7

IRF6674TRPbF

DirectFET Outline Dimension, MZ Outline

(Medium Size Can, Z-Designation).

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations

DIMENSIONS

METRIC

IMPERIAL

CODE MIN MAX

MIN

MAX

0.250

0.201

0.156

0.018

0.028

0.038

0.026

0.013

0.050

0.105

0.028

0.003

0.007

A

B

C

D

E

F

6.25 6.35

4.80 5.05

3.85 3.95

0.35 0.45

0.68 0.72

0.93 0.97

0.63 0.67

0.28 0.32

1.13 1.26

2.53 2.66

0.59 0.70

0.03 0.08

0.08 0.17

0.246

0.189

0.152

0.014

0.027

0.037

0.025

0.011

0.044

0.100

0.023

0.001

0.003

G

H

J

K

L

M

N

P

DirectFET Part Marking

GATE MARKING

LOGO

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

8

www.irf.com

IRF6674TRPbF

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6674MTRPBF). For 1000 parts on 7"

reel, order IRF6674MTR1PBF

REEL DIMENSIONS

STANDARD OPTION (QTY 4800)

METRIC IMPERIAL

TR1 OPTION (QTY 1000)

METRIC IMPERIAL

CODE

MIN

12.992

0.795

0.504

0.059

3.937

N.C

MAX

N.C

MIN

6.9

MAX

N.C

0.50

N.C

0.53

N.C

MIN

MAX

N.C

13.2

N.C

18.4

14.4

15.4

MIN

MAX

N.C

A

B

C

D

E

F

330.0

20.2

12.8

1.5

177.77

19.06

13.5

1.5

0.75

0.53

0.059

2.31

N.C

0.520

N.C

12.8

N.C

100.0

N.C

58.72

N.C

0.724

0.567

0.606

13.50

12.01

G

H

0.488

0.469

0.47

12.4

11.9

LOADED TAPE FEED DIRECTION

DIMENSIONS

METRIC

IMPERIAL

NOTE: CONTROLLING

DIMENSIONS IN MM

CODE

MIN

MAX

0.319

0.161

0.484

0.219

0.209

0.264

N.C

MIN

MAX

8.10

4.10

12.30

5.55

5.30

6.70

N.C

A

B

C

D

E

F

0.311

0.154

0.469

0.215

0.201

0.256

0.059

7.90

3.90

11.90

5.45

5.10

6.50

1.50

G

H

1.60

0.063

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.4/08

www.irf.com

9


型号：	IRF6674PBF
厂家：	Infineon
描述：	DirectFETPower MOSFET ??的DirectFET功率MOSFET
文件：	总9页 (文件大小：251K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF6674PBF [INFINEON]

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