IRF6668 [INFINEON]
DirectFET Power MOSFET; DirectFET功率MOSFET
| 型号： | IRF6668 |
| 厂家： | 
Infineon |
| 描述： | DirectFET Power MOSFET |
| 文件： | 总9页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97044A
IRF6668
DirectFET Power MOSFET
l RoHS compliant containing no lead or bromide
l Low Profile (<0.7 mm)
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
Qg tot Qgd
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
80V max ±20V max
12mΩ@ 10V 22nC 7.8nC
l Optimized for High Frequency Switching
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques
DirectFET
ISOMETRIC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
Description
The IRF6668 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6668 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI
input voltage range systems. The IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated DC-
DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance
isolated DC-DC converters.
Absolute Maximum Ratings
Max.
80
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
55
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
@ TC = 25°C
D
44
@ TC = 70°C
D
IDM
170
81
A
I
I
@ TC = 25°C
@ TC = 70°C
Continuous Source Current (Body Diode)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
S
S
52
ISM
170
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
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1
11/4/05
IRF6668
Electrical Characteristic @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
80
–––
–––
V
V/°C
mΩ
V
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A g
VDS = VGS, ID = 100µA
∆BVDSS/∆TJ
RDS(on)
––– 0.097 –––
–––
3.0
12
4.0
-11
–––
–––
–––
–––
–––
22
15
VGS(th)
4.9
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
22
––– mV/°C
VDS = 80V, VGS = 0V
20
250
100
-100
–––
31
µA
nA
S
VDS = 64V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
VDS = 10V, ID = 12A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 40V
Qgs1
Qgs2
Qgd
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
4.8
1.6
7.8
7.8
9.4
12
–––
–––
12
VGS = 10V
ID = 12A
nC
Qgodr
Qsw
Qoss
RG (Internal)
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 14
VDS = 16V, VGS = 0V
nC
Gate Resistance
1.0
19
Ω
VDD = 40V, VGS = 10Vꢁg
Turn-On Delay Time
ID = 12A
Rise Time
13
td(off)
tf
RG= 6.2Ω
See Fig. 16
VGS = 0V
Turn-Off Delay Time
7.1
23
ns
Fall Time
Ciss
Input Capacitance
––– 1320 –––
V
DS = 25V
ƒ = 1.0MHz
GS = 0V, VDS = 1.0V, f=1.0MHz
Coss
Crss
Coss
Coss
Output Capacitance
–––
–––
310
76
–––
–––
Reverse Transfer Capacitance
Output Capacitance
pF
V
––– 1400 –––
––– 200 –––
VGS = 0V, VDS = 64V, f=1.0MHz
Output Capacitance
Avalanche Characteristics
Parameter
Conditions
Min. Typ. Max. Units
EAS
TJ = 25°C, IS = 23A, RG = 25Ω
L = 0.088mH. See Fig. 13
Single Pulse Avalanche Energy
–––
–––
24
mJ
Diode Characteristics
Conditions
TJ = 25°C, IS = 12A, VGS = 0V g
TJ = 25°C, IF = 12A, VDD = 40V
di/dt = 100A/µs g
Parameter
Min. Typ. Max. Units
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
1.3
51
60
V
34
ns
nC
Qrr
40
Notes:
ꢀPulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF6668
Absolute Maximum Ratings
Max.
Parameter
Units
2.8
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
W
D
D
D
P
J
1.8
89
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
–––
1.0
Max.
45
Units
Rθ
Rθ
Rθ
Rθ
Junction-to-Ambient
JA
Junction-to-Ambient
Junction-to-Case
–––
1.4
°C/W
JA
JC
Junction-to-PCB Mounted
–––
J-PCB
10
1
D = 0.50
0.20
R1
R1
R2
R2
R3
R3
τi (sec)
0.10
0.05
Ri (°C/W)
τ
J τJ
τ
0.1
τ
CτC
0.3173 0.000048
0.5283 0.000336
0.5536 0.001469
τ
1 τ1
τ
2 τ2
3 τ3
0.02
0.01
Ci= τi/Ri
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 1. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes:
R is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu, steady state (still air).
Used double sided cooling, mounted on 1 in. square Cu board
PCB with small clip heatsink (still air).
θ
Note
Note
Note
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3
IRF6668
1000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
BOTTOM
BOTTOM
100
10
1
6.0V
6.0V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 3. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
V
= 10V
I
= 12A
DS
D
≤
60µs PULSE WIDTH
V
= 10V
GS
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
0.1
2
4
6
8
10
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 5. Normalized On-Resistance vs. Temperature
Fig 4. Typical Transfer Characteristics
10000
1000
100
12.0
V
= 0V,
= C
f = 1 MHZ
+ C , C
GS
I = 12A
D
C
C
C
SHORTED
ds
iss
gs
gd
= C
10.0
rss
oss
gd
= C + C
V
V
= 64V
= 40V
ds
gd
DS
DS
C
iss
8.0
6.0
4.0
2.0
0.0
C
oss
C
rss
10
1
10
100
0
2
4
6
8
10 12 14 16 18 20 22 24
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 7. Typical Total Gate Charge vs
Fig 6. Typical Capacitance vs.Drain-to-Source Voltage
Gate-to-Source Voltage
4
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IRF6668
60
50
40
30
20
10
0
60
50
40
30
20
10
0
I
= 12A
T
= 25°C
D
J
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
T
= 125°C
J
T
= 25°C
12
J
0
20
40
60
80
100
4
6
8
10
14
16
I , Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 9. Typical On-Resistance vs. Drain Current
Fig 8. Typical On-Resistance vs. Gate Voltage
1000
6.0
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
100
10
1
5.0
4.0
I
I
I
I
= 100µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
3.0
2.0
V
= 0V
GS
0
-75 -50 -25
0
25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
, Temperature ( °C )
V
, Source-to-Drain Voltage (V)
J
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 11. Typical Threshold Voltage vs.
Junction Temperature
100
80
60
40
20
0
1000
OPERATION IN THIS AREA
I
TOP
D
LIMITED BY R (on)
DS
4.3A
7.6A
100
BOTTOM 23A
100µsec
1msec
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
25
50
75
100
125
150
0
1
10
100
Starting T , Junction Temperature (°C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig12. Maximum Safe Operating Area
Fig 13. Maximum Avalanche Energy vs. Drain Current
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5
IRF6668
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
Qgs1
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 14a. Gate Charge Test Circuit
Fig 14b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
L
V
DS
D.U.T
AS
R
G
+
-
V
DD
I
A
VGS
20V
0.01
Ω
t
p
I
AS
Fig 15a. Unclamped Inductive Test Circuit
Fig 15b. Unclamped Inductive Waveforms
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+
-
VDD
10%
VGS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
td(off)
tr
tf
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
6
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IRF6668
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
www.irf.com
7
IRF6668
DirectFET Outline Dimension, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
CODE
MAX
MIN
MIN
6.25
4.80
3.85
0.35
0.68
0.68
0.93
0.63
0.28
1.13
2.53
0.59
0.03
0.08
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.038
0.026
0.013
0.050
0.105
0.028
0.003
0.007
A
B
C
D
E
F
6.35
5.05
3.95
0.45
0.72
0.72
0.97
0.67
0.32
1.26
2.66
0.70
0.08
0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.037
0.025
0.011
0.044
0.100
0.023
0.001
0.003
G
H
J
K
L
M
N
P
DirectFET Part Marking
8
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IRF6668
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6668). For 1000 parts on 7" reel,
order IRF6668TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MAX
IMPERIAL
CODE
MIN
MIN
MAX
N.C
MIN
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
NOTE: CONTROLLING
DIMENSIONS IN MM
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
0.311
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
A
B
C
D
E
F
8.10
4.10
12.30
5.55
5.30
6.70
N.C
0.154
0.469
0.215
0.201
0.256
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/05
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9
相关型号：
IRF6678TR1
Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
INFINEON
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