IRF6662TR1PBF [INFINEON]
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3;
| 型号： | IRF6662TR1PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97039A
IRF6662
DirectFET™ Power MOSFET ꢀ
Typical values (unless otherwise specified)
ꢂLead and Bromide Free ꢁ
VDSS
100V max ±20V max
VGS
RDS(on)
17.5mΩ@ 10V
Vgs(th)
ꢂLow Profile (<0.7 mm)
ꢂDual Sided Cooling Compatible ꢁ
ꢂUltra Low Package Inductance
ꢂOptimized for High Frequency Switching ꢁ
Qg tot
Qgd
22nC
6.8nC
3.9V
ꢂIdeal for High Performance Isolated Converter
Primary Switch Socket
ꢂOptimized for Synchronous Rectification
ꢂLow Conduction Losses
ꢂCompatible with existing Surface Mount Techniques ꢁ
DirectFET™ ISOMETRIC
MZ
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)ꢁ
SQ
SX
ST
MQ
MX
MT
Description
The IRF6662 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6662 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Max.
100
±20
8.3
6.6
47
Parameter
Units
V
VDS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V ꢃ
Continuous Drain Current, VGS @ 10V ꢃ
Continuous Drain Current, VGS @ 10V ꢄ
Pulsed Drain Current ꢅ
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
A
66
DM
EAS
IAR
39
Single Pulse Avalanche Energy ꢆ
Avalanche Current ꢅ
mJ
A
4.9
100
80
60
40
20
0
12.0
10.0
8.0
I
= 4.9A
I = 4.9A
D
D
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
6.0
T
T
= 125°C
J
J
4.0
2.0
= 25°C
12
0.0
4
6
8
10
14
16
0
5
10
15
20
25
Q
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Typical Total Gate Charge vs.
Fig 1. Typical On-Resistance vs. Gate Voltage
Gate-to-Source Voltage
Notes:
ꢄTC measured with thermocouple mounted to top (Drain) of part.
ꢅRepetitive rating; pulse width limited by max. junction temperature.
ꢆStarting TJ = 25°C, L = 3.2mH, RG = 25Ω, IAS = 4.9A.
ꢁClick on this section to link to the appropriate technical paper.
ꢀClick on this section to link to the DirectFET Website.
ꢃSurface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
11/7/05
IRF6662
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
100
–––
–––
3.0
–––
0.10
17.5
–––
-9.7
–––
–––
–––
–––
–––
22
–––
–––
22
V
V/°C
mΩ
V
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 8.2A ꢁ
∆ΒVDSS/∆TJ
RDS(on)
VDS = VGS, ID = 100µA
VGS(th)
4.9
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
11
––– mV/°C
VDS = 100V, VGS = 0V
20
250
100
-100
–––
31
µA
nA
S
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
VDS = 10V, ID = 4.9A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 50V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
4.9
–––
–––
10
VGS = 10V
ID = 4.9A
1.2
nC
6.8
9.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 17
8.0
VDS = 16V, VGS = 0V
11
nC
Gate Resistance
1.2
Ω
VDD = 50V, VGS = 10V ꢁ
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
ID = 4.9A
Rise Time
7.5
RG=6.2Ω
Turn-Off Delay Time
24
ns
Fall Time
5.9
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
1360
270
61
VDS = 25V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
VGS = 0V, VDS = 1.0V, f=1.0MHz
1340
160
VGS = 0V, VDS = 80V, f=1.0MHz
Output Capacitance
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
D
IS
MOSFET symbol
Continuous Source Current
–––
–––
2.5
showing the
(Body Diode)
A
G
ISM
integral reverse
Pulsed Source Current
(Body Diode) ꢀ
–––
–––
66
S
p-n junction diode.
TJ = 25°C, IS = 4.9A, VGS = 0V ꢁ
TJ = 25°C, IF = 4.9A, VDD = 50V
di/dt = 100A/µs ꢁ
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
34
1.3
51
75
V
ns
nC
Qrr
50
Notes:
ꢁPulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀRepetitive rating; pulse width limited by max. junction temperature.
2
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IRF6662
Absolute Maximum Ratings
Max.
Parameter
Units
2.8
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation ꢁ
Power Dissipation ꢁ
Power Dissipation ꢄ
W
D
D
D
P
J
1.8
89
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Ambient ꢁꢅ
Junction-to-Ambient ꢀꢅ
Typ.
–––
12.5
20
Max.
45
Units
RθJA
RθJA
–––
–––
1.4
RθJA
Junction-to-Ambient ꢃꢅ
Junction-to-Case ꢄꢅ
°C/W
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
–––
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
Ri (°C/W) τi (sec)
R4
1.2801
0.000322
τ
τ
J τJ
AτA
8.7256
0.164798
0.1
τ
1 τ1
τ
τ
τ
2 τ2
3 τ3
4 τ4
21.7500 2.2576
13.2511 69
SINGLE PULSE
Ci= τi/Ri
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ꢁ
Notes:
ꢄTC measured with thermocouple incontact with top (Drain) of part.
ꢁSurface mounted on 1 in. square Cu board, steady state.
ꢀUsed double sided cooling , mounting pad.
ꢃMounted on minimum footprint full size board with metalized
back and with small clip heatsink.
ꢅR is measured at TJ of approximately 90°C.
θ
ꢃMounted on minimum
ꢁSurface mounted on 1 in. square Cu
board (still air).
ꢃMounted to a PCB with
small clip heatsink (still air)
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
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IRF6662
100
10
1
100
VGS
15V
10V
8.0V
7.0V
6.0V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
BOTTOM
BOTTOM
6.0V
10
6.0V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
≤
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
V
= 10V
V
I
= 10V
DS
≤60µs PULSE WIDTH
GS
= 8.2A
D
10
1
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
0.1
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
45
100000
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
J
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
40
35
30
25
20
15
rss
oss
gd
= C + C
Vgs = 7.0V
ds
gd
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
C
iss
C
C
oss
rss
10
0
10
20
30
40
50
60
1
10
, Drain-to-Source Voltage (V)
100
V
DS
I , Drain Current (A)
D
Fig 9. Typical On-Resistance vs. Drain Current
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
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IRF6662
1000
100
10
1000
100
10
1
V
= 0V
GS
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
J
T
= 150°C
= 25°C
= -40°C
100µsec
J
T
J
1msec
10msec
1
T
= 25°C
A
Tj = 150°C
Single Pulse
0.1
0
0
1
10
100
1000
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig11. Maximum Safe Operating Area
Fig 10. Typical Source-Drain Diode Forward Voltage
10
7.0
6.0
5.0
4.0
3.0
2.0
I
I
I
I
= 100µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
8
6
4
2
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
J
T
, Ambient Temperature (°C)
A
Fig 13. Typical Threshold Voltage vs.
Fig 12. Maximum Drain Current vs. Ambient Temperature
Junction Temperature
160
140
120
100
80
I
TOP
D
1.6A
1.9A
BOTTOM 4.9A
60
40
20
0
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
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5
IRF6662
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
20V
0.01
Ω
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+
-
VDD
10%
VGS
10V
td(on)
td(off)
tr
tf
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6662
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
ꢃ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
ꢀ
-
Reverse
Recovery
Current
Body Diode Forward
- ꢄ
Current
di/dt
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
ꢁ
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Body Diode
Inductor Current
Forward Drop
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
www.irf.com
7
IRF6662
DirectFET™ Outline Dimension, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
CODE
MAX
MAX
MIN
6.25
4.80
3.85
0.35
0.68
0.68
0.93
0.63
0.28
1.13
2.53
0.59
0.03
0.08
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.038
0.026
0.013
0.050
0.105
0.028
0.003
0.007
A
B
C
D
E
F
6.35
5.05
3.95
0.45
0.72
0.72
0.97
0.67
0.32
1.26
2.66
0.70
0.08
0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.037
0.025
0.011
0.044
0.100
0.023
0.001
0.003
G
H
J
K
L
M
N
P
DirectFET™ Part Marking
8
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IRF6662
DirectFET™ Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6662). For 1000 parts on 7" reel,
order IRF6662TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN
MAX
IMPERIAL
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
A
B
C
D
E
F
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE MIN
MIN
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/05
www.irf.com
9
相关型号：
IRF6665TR1PBF
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
INFINEON
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