IR11682S_11 [INFINEON]
DUAL SmartRectifier DRIVER IC 200V proprietary IC technology; 双智能整流驱动IC专有200V IC技术型号: | IR11682S_11 |
厂家: | Infineon |
描述: | DUAL SmartRectifier DRIVER IC 200V proprietary IC technology |
文件: | 总22页 (文件大小:381K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Datasheet No – 97476
July 1, 2011
IR11682S
DUAL SmartRectifierTM DRIVER IC
Product Summary
Features
•
Secondary-side
high
speed
controller
for
Topology
LLC Half-bridge
200V
synchronous rectification in resonant half bridge
topologies
VD
•
•
•
•
•
•
•
•
•
•
200V proprietary IC technology
Max 400KHz switching frequency
Anti-bounce logic and UVLO protection
4A peak turn off drive current
Micropower start-up & ultra low quiescent current
10.7V gate drive clamp
80ns turn-off propagation delay
Wide Vcc operating range
Direct sensing for both Synchronous Rectifiers
Cycle by Cycle MOT Check Circuit prevents multiple
false trigger GATE pulses
VOUT
10.7V Clamped
+1A & -4A
Io+ & I o- (typical)
Turn on Propagation Delay
100ns (typical)
Turn off Propagation Delay 80ns (typical)
Package Options
•
•
•
Minimal component count
Simple design
Lead-free
Typical Applications
•
LCD & PDP TV, Telecom SMPS, AC-DC adapters
8-Lead SOIC
Typical Connection Diagram
Vin
SR1
Cdc
C1
M1
Rg1
Lr
1
2
1
2
3
4
8
7
6
5
GATE1 GATE2
VCC
VS1
VD1
GND
VS2
VD2
LOAD
Cout
IR11682
C2
M2
Rg2
Rtn
SR2
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© 2010 International Rectifier
IR11682S
Table of Contents
Description
Page
3
Qualification Information
Absolute Maximum Ratings
Electrical Characteristics
Functional Block Diagram
Input/Output Pin Equivalent Circuit Diagram
Lead Definitions
4
5
6
8
9
10
10
12
19
20
21
22
Lead Assignments
Application Information and Additional Details
Package Details
Tape and Reel Details
Part Marking Information
Ordering Information
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© 2010 International Rectifier
2
IR11682S
Description
IR11682 is a dual smart secondary-side rectifier driver IC designed to drive two N-Channel power MOSFETs
used as synchronous rectifiers in resonant converter applications. The IC can control one or more paralleled N
MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source for each rectifier MOSFET
voltage is sensed differentially to determine the level of the current and the power switch is turned ON and
OFF in close proximity of the zero current transition. The anti shoot-through logic prevents both channels from
turning on the power switches at the same time. The cycle-by-cycle MOT protection circuit can automatically
detect no load condition and turn off gate driver output to avoid negative current flowing through the
MOSFETs. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and
double-pulse suppression that allows reliable operation in fixed and variable frequency applications.
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© 2010 International Rectifier
3
IR11682S
Qualification Information†
Industrial††
Comments: This family of ICs has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
Qualification Level
MSL2††† 260°C
SOIC8N
Moisture Sensitivity Level
(per IPC/JEDEC J-STD-020)
Class B
Machine Model
Human Body Model
(per JEDEC standard JESD22-A115)
ESD
Class 2
(per EIA/JEDEC standard EIA/JESD22-A114)
Class 1, Level A
(per JESD78)
Yes
IC Latch-Up Test
RoHS Compliant
†
††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
†††
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
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© 2010 International Rectifier
4
IR11682S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Parameters
Supply Voltage
Cont. Drain Sense Voltage
Pulse Drain Sense Voltage
Source Sense Voltage
Gate Voltage
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Package Power Dissipation
Switching Frequency
Symbol
VCC
VD
VD
VS
VGATE
TJ
TS
Min.
-0.3
-1
-5
-3
-0.3
-40
-55
Max.
20
200
200
20
Units
V
V
V
V
V
°C
°C
Remarks
20
VCC=20V, Gate off
150
150
128
970
400
RθJA
PD
fsw
°C/W
mW
kHz
SOIC-8
SOIC-8, TAMB=25°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
VCC
VD1, VD2
TJ
Definition
Min.
8.6
-3 †
-25
---
Max.
18
200
125
400
Units
Supply voltage
Drain Sense Voltage
V
Junction Temperature
Switching Frequency
°C
kHz
Fsw
-3V negative spike width 100ns
† VD1, VD2
≤
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© 2010 International Rectifier
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IR11682S
Electrical Characteristics
VCC=15V and TA = 25°C unless otherwise specified. The output volt age and current (VO and IO) parameters
are referenced to GND (pin7).
Supply Section
Parameters
Supply Voltage Operating
Range
Symbol Min.
Typ.
Max.
Units
Remarks
VCC
8.6
7.5
18
V
V
GBD
VCC Turn On Threshold
VCC Turn Off Threshold
(Under Voltage Lock Out)
VCC ON
8.1
7.6
8.5
VCC UVLO
7
8
V
VCC Turn On/Off Hysteresis VCC HYST
0.5
14
V
CLOAD =1nF, fSW = 400kHz
CLOAD =4.7nF, fSW = 400kHz
18
60
mA
mA
mA
Operating Current
ICC
48
Quiescent Current
Start-up Current
IQCC
2.6
4.3
140
ICC START
µA VCC=VCC ON - 0.1V
Comparator Section
Parameters
Turn-off Threshold
Turn-on Threshold
Hysteresis
Symbol Min.
Typ.
-6
Max.
0
Units
mV
mV
mV
µA
Remarks
VTH1
VTH2
-12
-220
-140
141
1
-80
VHYST
IIBIAS1
IIBIAS2
VOFFSET
VD = -50mV
VD = 200V
GBD
Input Bias Current
10
50
2
Input Bias Current
10
µA
Comparator Input Offset
mV
One-Shot Section
Parameters
Blanking pulse duration
Symbol Min.
tBLANK
Typ.
17
Max.
25
Units
µs
Remarks
8
2.5
5.4
40
V
V
VCC=10V – GBD
VCC=20V – GBD
Reset Threshold
Hysteresis
VTH3
mV VCC=10V – GBD
VHYST3
Minimum On Time Section
Parameters
Minimum on time
Symbol Min.
TOnmin
Typ.
Max.
Units
Remarks
600
850
1100
ns
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© 2010 International Rectifier
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IR11682S
Electrical Characteristics
VCC=15V and TA = 25°C unless otherwise specified. The output volt age and current (VO and IO) parameters
are referenced to GND (pin7).
Gate Driver Section
Parameters
Gate Low Voltage
Gate High Voltage
Rise Time
Symbol Min.
VGLO
Typ.
0.3
10.7
10
80
5
25
100
80
5
1.2
Max.
0.5
13.5
Units
V
V
ns
ns
ns
ns
ns
ns
Ω
Remarks
IGATE = 200mA
VCC=12V-18V (internally clamped)
CLOAD = 1nF
CLOAD = 4.7nF
CLOAD = 1nF
VGTH
tr1
8.5
tr2
tf1
tf2
tDon
tDoff
rup
Fall Time
CLOAD = 4.7nF
Turn on Propagation Delay
Turn off Propagation Delay
Pull up Resistance
Pull down Resistance
Output Peak Current
(source)
200
120
VDS to VGATE -100mV overdrive
VDS to VGATE -100mV overdrive
IGATE = 15mA – GBD
IGATE = -200mA – GBD
rdown
Ω
IO source
IO sink
1
4
A
A
CLOAD = 1nF – GBD
CLOAD = 1nF – GBD
Output Peak Current (sink)
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IR11682S
Functional Block Diagram
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IR11682S
I/O Pin Equivalent Circuit Diagram
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IR11682S
Lead Definitions
PIN#
Symbol
GATE1
VCC
Description
Gate Drive Output 1
Supply Voltage
Sync FET 1 Source Voltage Sense
Sync FET 1 Drain Voltage Sense
Sync FET 2 Drain Voltage Sense
Sync FET 2 Source Voltage Sense
Analog and Power Ground
Gate Drive Output 2
1
2
3
4
5
6
7
8
VS1
VD1
VD2
VS2
GND
GATE2
Lead Assignments
1
2
3
4
GATE1
VCC
VS1
8
7
6
5
GATE2
GND
VS2
VD2
VD1
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IR11682S
Detailed Pin Description
VCC: Power Supply
This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to
turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC.
To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as
close as possible to the IR11682. This pin is not internally clamped.
GND: Ground
This is ground potential pin of the integrated control circuit. The internal devices and gate driver are
referenced to this point.
VD1 and VD2: Drain Voltage Sense
These are the two high-voltage pins used to sense the drain voltage of the two SR power MOSFETs. Routing
between the drain of the MOSFET and the IC pin must be particularly optimized.
Additional RC filter in not necessary but could be added to VD1 and VD2 pins to increase noise immunity.
For applications which VD voltage exceeds 100V, a 1Kohm to 2Kohm VD resistor is recommended to be
added between the drain of SR MOSFET and VD pin. The VD resistor helps to limit the switching loss of VD
pins.
VS1 and VS2: Source Voltage Sense
These are the two differential sense pins for the two source pins of the two SR power MOSFETs. This pin
must not be connected directly to the GND pin (pin 7) but must be used to create a Kelvin contact as close as
possible to the power MOSFET source pin.
GATE1 and GATE2: Gate Drive Outputs
These are the two gate drive outputs of the IC. The gate voltage is internally clamped and has a +1A/-4A
peak drive capability. Although this pin can be directly connected to the synchronous rectifier (SR) MOSFET
gate, the use of gate resistor is recommended (specifically when putting multiple MOSFETs in parallel). Care
must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal
switching performance.
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IR11682S
Application Information and Additional Details
State Diagram
POWER ON
GateꢀInactive
UVLOꢀMODE
VCCꢀ<ꢀVCCon
GateꢀInactive
ICC =ꢀICCꢀSTART
VCC > VCCon
& VDS>VTH3
VCC < VCCuvlo
NORMAL
GateꢀActive
GateꢀPWꢀ≥ MOT
CycleꢀbyꢀCycleꢀMOTꢀCheckꢀEnabled
VDS>VTH1 @ MOT
VDS<VTH1 @ MOT
MOT PROTECTION
MODE
GateꢀOutputꢀDisabled
UVLO Mode:
The IC is in the UVLO mode when the VCC pin voltage is below VCCUVLO. The UVLO mode is accessible
from any other state of operation. In the UVLO state, most of the internal circuitry is unbiased and the IC
draws a quiescent current of ICCSTART.
The IC remains in the UVLO condition until the voltage on the VCC pin exceeds the VCC turn on threshold
voltage, VCC ON.
Normal Mode:
Once Vcc exceeds the UVLO voltage, the IC is ready to go into Normal mode. The GATE outputs are
activated when the VDS sensed on the MOSFET crosses VTH3. This function will prevent the GATE to turn-
on towards the end of a switching cycle and prevent reverse current in MOT time. In Normal mode the gate
drivers are operating and the IC will draw a maximum of ICC from the supply voltage source.
MOT Protection Mode
If the secondary current conduction time is shorter than the MOT (Minimum On Time) time, the next driver
output is disabled. This function can avoid reverse current that occurs when the system works at very light/no
load conditions and reduce system standby power consumption by disabling GATE outputs. The IC
automatically goes back to normal operation mode once the load increases to a level and the secondary
current conduction time is longer than MOT.
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IR11682S
General Description
The IR11682 Dual Smart Rectifier controller IC is the industry first dedicated high-voltage controller IC for
synchronous rectification in resonant converter applications. The IC can emulate the operation of the two
secondary rectifier diodes by correctly driving the synchronous rectifier (SR) MOSFETs in the two secondary
legs.
The core of this device are two high-voltage, high speed comparators which sense the drain to source voltage
of the MOSFETs differentially. The device current is sensed using the RDSON as a shunt resistance and the
GATE pin of the MOSFET is driven accordingly. Dedicated internal logic then manages to turn the power
device on and off in close proximity of the zero current transition.
IR11682 further simplifies synchronous rectifier control by offering the following power management features:
-Wide VCC operating range allows the IC to be directly powered from the converter output
-Shoot through protection logic that prevents both the GATE outputs from the IC to be high at the same time
-Device turn ON and OFF in close proximity of the zero current transition with low turn-on and turn-off
propagation delays; eliminates reactive power flow between the output capacitors and power transformer
-Internally clamped gate driver outputs that significantly reduce gate losses.
The SmartRectifier™ control technique is based on sensing the voltage across the MOSFET and comparing it
with two negative thresholds to determine the turn on and off transitions for the device. The rectifier current is
sensed by the input comparators using the power MOSFET RDSON as a shunt resistance and its GATE is
driven depending on the level of the sensed voltage vs. the 3 thresholds shown below.
VGate
VDS
VTH2
VTH1
VTH3
Figure 1: Input comparator thresholds
Turn-on phase
When the conduction phase of the SR FET is initiated, current will start flowing through its body diode,
generating a negative VDS voltage across it. The body diode has generally a much higher voltage drop than the
one caused by the MOSFET on resistance and therefore will trigger the turn-on threshold VTH2
.
When VTH2 is triggered, IR11682 will drive the gate of MOSFET on which will in turn cause the conduction
voltage VDS to drop down to ID*RDSON. This drop is usually accompanied by some amount of ringing, that
could trigger the input comparator to turn off; hence, a fixed Minimum On Time (MOT) blanking period is used
that will maintain the power MOSFET on for a minimum amount of time.
The fixed MOT limits the minimum conduction time of the secondary rectifiers and hence, the maximum
switching frequency of the converter.
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IR11682S
Turn-off phase
Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level
where VDS will cross the turn-off threshold VTH1
.
Since the device currents are sinusoidal here, the device VDS will cross the VTH1 threshold with a relatively low
dV/dt. Once the threshold is crossed, the current will start flowing again through the body diode, causing the
VDS voltage to jump negative. Depending on the amount of residual current, VDS may once again trigger the
turn-on threshold; hence, VTH2 is blanked for a time duration tBLANK after VTH1 is triggered. When the device
VDS crosses the positive reset threshold VTH3, tBLANK is terminated and the IC is ready for next conduction
cycle as shown below.
VTH3
IDS
VDS
T1
T2
VTH1
VTH2
GateꢀDrive
Blanking
MOT
tBLANK
time
Figure 2: Secondary currents and voltages
MOT protection
At very light load or no load condition, the current in SR FET will become discontinuous and could be shorter
than MOT time in some system. If this happens, the SR FET current will flow from drain to source at the end
of MOT. The reverse current discharges output capacitor; stores the energy in transformer and causes
resonant on VDS voltage once the SR FET turns off. The resonant could turn on the gate of IR11682, caused
more reverse current and thus subsequent multi false triggering as shown below in Figure 3.
Figure 3: Waveform without MOT protection
The cycle-by-cycle MOT protection circuit can detect the reverse current situation and disable the next output
gate pulse to avoid this issue. The internal comparator and MOT pulse generator still work under the
protection mode. So the circuit can continuously monitor the load current and come back to normal working
mode once the load current conduction time increased to longer than MOT. This circuit helps to reduce
standby power losses. It also can prevent voltage spike that caused by false triggering at light load.
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IR11682S
Figure 4: Waveform under MOT protection mode
General Timing Waveform
VCC
VCC ON
VCC UVLO
t
UVLO
NORMAL
UVLO
Figure 5: Vcc UVLO
VTH1
VDS
VTH2
tDon
tDoff
VGate
90%
50%
10%
trise
tfall
Figure 6: Timing waveform
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IR11682S
Figure 7: Supply Current vs. Supply Voltage
Figure 8: Undervoltage Lockout vs. Temperature
Figure 9: Icc Quiescent Currrent vs. Temperature
Figure 10: Icc Supply Currrent @1nF Load vs.
Temperature
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IR11682S
Figure 12: VTH2 vs. Temperature
Figure 11: VTH1 vs. Temperature
Figure 13: Comparator Hysteresis vs.
Temperature
Figure 14: MOT vs Temperature
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IR11682S
Figure 15: Turn-on Propagation Delay vs.
Temperature
Figure 16: Turn-off Propagation Delay vs.
Temperature
Figure 18: Gate Output Tr and Tf time @ 1nF
Load vs. Temperature
Figure 17: Gate Clamping Voltage vs.
Temperature
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© 2010 International Rectifier
18
IR11682S
Package Details: SOIC8N
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© 2010 International Rectifier
19
IR11682S
Tape and Reel Details: SOIC8N
LOADED TAPE FEED DIRECTION
A
B
H
D
F
C
NOTE : CONTROLLING
DIMENSION IN MM
E
G
CARRIER TAPE DIMENSION FOR 8SOICN
Metric
Imperial
Min
0.311
0.153
0.46
Code
A
B
C
D
E
F
G
H
Min
7.90
3.90
11.70
5.45
6.30
5.10
1.50
1.50
Max
8.10
4.10
12.30
5.55
6.50
5.30
n/a
Max
0.318
0.161
0.484
0.218
0.255
0.208
n/a
0.214
0.248
0.200
0.059
0.059
1.60
0.062
F
D
B
C
A
E
G
H
REEL DIMENSIONS FOR 8SOICN
Metric
Imperial
Code
A
B
C
D
E
F
G
H
Min
329.60
20.95
12.80
1.95
98.00
n/a
14.50
12.40
Max
330.25
21.45
13.20
2.45
102.00
18.40
17.10
14.40
Min
12.976
0.824
0.503
0.767
3.858
n/a
Max
13.001
0.844
0.519
0.096
4.015
0.724
0.673
0.566
0.570
0.488
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IR11682S
Part Marking Information
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© 2010 International Rectifier
21
IR11682S
Ordering Information
Standard Pack
Base Part Number
Package Type
Complete Part Number
Form
Quantity
Tube/Bulk
95
IR11682SPBF
SOIC8N
IR11682
Tape and Reel
2500
IR11682STRPBF
The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no
responsibility for the consequences of the use of this information. International Rectifier assumes no responsibility for any
infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by
implication or otherwise under any patent or patent rights of International Rectifier. The specifications mentioned in this document are
subject to change without notice. This document supersedes and replaces all information previously supplied.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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22
相关型号:
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