IR1168SPBF_技术文档

Datasheet No – PD97382

September 26, 2011

IR1168S

DUAL SMART RECTIFIER DRIVER IC

Product Summary

Features

•

Secondary-side

high

speed

controller

for

Topology

LLC Half-bridge

200V

synchronous rectification in resonant half bridge

topologies

VD

•

200V proprietary IC technology

Max 500KHz switching frequency

Anti-bounce logic and UVLO protection

4A peak turn off drive current

Micropower start-up & ultra low quiescent current

10.7V gate drive clamp

70ns turn-off propagation delay

Wide Vcc operating range

Direct sensing for both Synchronous Rectifiers

Minimal component count

V_OUT

10.7V Clamped

+1A & -4A

I_o+& I _o-(typical)

Turn on Propagation Delay

60ns (typical)

Turn off Propagation Delay 70ns (typical)

Package Options

Simple design

Lead-free

Typical Applications

•

LCD & PDP TV, Telecom SMPS, AC-DC adapters

8-Lead SOIC

Typical Connection Diagram

Vin

SR1

Cdc

C1

M1

Rg1

Lr

1

2

1

2

3

4

8

7

6

5

GATE1 GATE2

VCC

VS1

VD1

GND

VS2

VD2

LOAD

Cout

IR1168

C2

M2

Rg2

Rtn

SR2

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IR1168S

Table of Contents

Description

Page

3

Qualification Information

Absolute Maximum Ratings

Electrical Characteristics

Functional Block Diagram

Input/Output Pin Equivalent Circuit Diagram

Lead Definitions

4

5

6

8

9

10

12

16

17

18

19

Lead Assignments

Application Information and Additional Details

Package Details

Tape and Reel Details

Part Marking Information

Ordering Information

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2

IR1168S

Description

IR1168 is dual smart secondary-side rectifier driver IC designed to drive two N-Channel power MOSFETs used as

synchronous rectifiers in resonant converter applications. The IC can control one or more paralleled N MOSFETs

to emulate the behavior of Schottky diode rectifiers. The drain to source for each rectifier MOSFET voltage is

sensed differentially to determine the level of the current and the power switch is turned ON and OFF in close

proximity of the zero current transition. Ruggedness and noise immunity are accomplished using an advanced

blanking scheme and double-pulse suppression that allows reliable operation in fixed and variable frequency

applications.

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3

IR1168S

Qualification Information^†

Industrial^††

Comments: This family of ICs has passed JEDEC’s

Industrial qualification. IR’s Consumer qualification level is

granted by extension of the higher Industrial level.

Qualification Level

MSL2^†††260°C

SOIC8N

Moisture Sensitivity Level

(per IPC/JEDEC J-STD-020)

Class B

Machine Model

Human Body Model

(per JEDEC standard JESD22-A115)

ESD

Class 2

(per EIA/JEDEC standard EIA/JESD22-A114)

Class I, Level A

(per JESD78)

Yes

IC Latch-Up Test

RoHS Compliant

†

††

Qualification standards can be found at International Rectifier’s web site http://www.irf.com/

Higher qualification ratings may be available should the user have such requirements. Please contact

your International Rectifier sales representative for further information.

††† Higher MSL ratings may be available for the specific package types listed here. Please contact your

International Rectifier sales representative for further information.

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4

IR1168S

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage

parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal

resistance and power dissipation ratings are measured under board mounted and still air conditions.

Parameters

Supply Voltage

Cont. Drain Sense Voltage

Pulse Drain Sense Voltage

Source Sense Voltage

Gate Voltage

Operating Junction Temperature

Storage Temperature

Thermal Resistance

Package Power Dissipation

Switching Frequency

Symbol

V_CC

V_D

V_S

V_GATE

T_J

T_S

Min.

-0.3

-3

-5

-3

-0.3

-40

-55

Max.

20

200

20

Units

V

°C

Remarks

20

V_CC=20V, Gate off

150

128

970

500

R_θJA

P_D

fsw

°C/W

mW

kHz

SOIC-8

SOIC-8, T_AMB=25°C

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5

IR1168S

Electrical Characteristics

The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and

junction temperature range TJ from – 25° C to 125°C . Typical values represent the median values, which are

related to 25°C. If not otherwise stated, a supply voltage of V_CC= 15 V is assumed for test condition.

Supply Section

Parameters

Supply Voltage Operating

Range

Symbol Min.

Typ.

Max.

Units

Remarks

V_CC

8.6

7.5

18

V

GBD

V_CCTurn On Threshold

V_CCTurn Off Threshold

(Under Voltage Lock Out)

V_{CC ON}

8.1

7.6

8.5

V_{CC UVLO}

7

8

V

V_CCTurn On/Off Hysteresis V_{CC HYST}

0.5

14

V

C_LOAD=1nF, f_SW= 400kHz

C_LOAD=4.7nF, f_SW= 400kHz

18

60

mA

Operating Current

I_CC

48

Quiescent Current

Start-up Current

I_QCC

2.6

3.8

140

I_{CC START}

µA V_CC=V_{CC ON}- 0.1V

Comparator Section

Parameters

Turn-off Threshold

Turn-on Threshold

Hysteresis

Symbol Min.

Typ.

-6

Max.

0

Units

mV

µA

Remarks

V_TH1

V_TH2

-12

-220

-140

141

1

-80

V_HYST

I_IBIAS1

I_IBIAS2

V_OFFSET

V_D= -50mV

V_D= 200V

GBD

Input Bias Current

10

50

2

Input Bias Current

10

µA

Comparator Input Offset

mV

One-Shot Section

Parameters

Blanking pulse duration

Symbol Min.

t_BLANK

Typ.

17

Max.

25

Units

µs

Remarks

9

2.5

5.4

40

V

V_CC=10V – GBD

V_CC=20V – GBD

Reset Threshold

Hysteresis

V_TH3

mV V_CC=10V - GBD

V_HYST3

Minimum On Time Section

Parameters

Minimum on time

Symbol Min.

T_ONmin

Typ.

Max.

Units

Remarks

500

750

1000

ns

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6

IR1168S

Electrical Characteristics

The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and

junction temperature range TJ from – 25° C to 125°C . Typical values represent the median values, which are

related to 25°C. If not otherwise stated, a supply voltage of V_CC= 15 V is assumed for test condition.

Gate Driver Section

Parameters

Gate Low Voltage

Gate High Voltage

Rise Time

Symbol Min.

V_GLO

Typ.

0.3

10.7

10

80

5

25

60

70

5

Max.

0.5

13.5

Units

V

ns

Ω

Remarks

I_GATE= 200mA

V_CC=12V-18V (internally clamped)

C_LOAD= 1nF

C_LOAD= 4.7nF

C_LOAD= 1nF

V_GTH

t_r1

8.5

t_r2

t_f1

t_f2

t_Don

t_Doff

r_up

Fall Time

C_LOAD= 4.7nF

Turn on Propagation Delay

Turn off Propagation Delay

Pull up Resistance

Pull down Resistance

Output Peak Current (source) I_{O source}

Output Peak Current (sink) I_{O sink}

120

V_DSto V_GATE-100mV overdrive

I_GATE= 15mA - GBD

I_GATE= -200mA

C_LOAD= 1nF - GBD

r_down

1.2

1

4

Ω

A

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7

IR1168S

Functional Block Diagram

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8

IR1168S

I/O Pin Equivalent Circuit Diagram

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9

IR1168S

Lead Definitions

PIN#

Symbol

GATE1

VCC

Description

Gate Drive Output 1

Supply Voltage

Sync FET 1 Source Voltage Sense

Sync FET 1 Drain Voltage Sense

Sync FET 2 Drain Voltage Sense

Sync FET 2 Source Voltage Sense

Analog and Power Ground

Gate Drive Output 2

1

2

3

4

5

6

7

8

VS1

VD1

VD2

VS2

GND

GATE2

Lead Assignments

1

2

3

4

GATE1

VCC

VS1

8

7

6

5

GATE2

GND

VS2

VD2

VD1

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IR1168S

Detailed Pin Description

VCC: Power Supply

This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn

off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC.

To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as close as

possible to the IR1168. This pin is not internally clamped.

GND: Ground

This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to

this point.

VD1 and VD2: Drain Voltage Sense

These are the two high-voltage pins used to sense the drain voltage of the two SR power MOSFETs. Routing

between the drain of the MOSFET and the IC pin must be particularly optimized.

VS1 and VS2: Source Voltage Sense

These are the two differential sense pins for the two source pins of the two SR power MOSFETs. This pin must

not be connected directly to the GND pin (pin 7) but must be used to create a kelvin contact as close as possible

to the power MOSFET source pin.

GATE1 and GATE2: Gate Drive Outputs

These are the two gate drive outputs of the IC. The gate voltage is internally clamped and has a +1A/-4A peak

drive capability. Although this pin can be directly connected to the synchronous rectifier (SR) MOSFET gate, the

use of gate resistor is recommended (specifically when putting multiple MOSFETs in parallel). Care must be taken

in order to keep the gate loop as short and as small as possible in order to achieve optimal switching performance.

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11

IR1168S

Application Information and Additional Details

State Diagram

POWER ON

Gate Inactive

UVLO MODE

VCC < VCCon

Gate Inactive

I_CC= I_{CC START}

VCC > VCCon

VCC < VCCuvlo

NORMAL

Gate Active

Gate PW ≥ MOT

UVLO Mode:

The IC is in the UVLO mode when the VCC pin voltage is below VCCUVLO. The UVLO mode is accessible fro

any other state of operation. In the UVLO state, most of the internal circuitry is unbiased and the IC draws

quiescent current of ICCSTART.

The IC remains in the UVLO condition until the voltage on the VCC pin exceeds the VCC turn on thresh

voltage, VCC ON.

Normal Mode:

The IC enters in normal operating mode once the UVLO voltage has been exceeded. At this point the gate drive

are operating and the IC will draw a maximum of ICC from the supply voltage source.

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12

IR1168S

General Description

The IR1168 Dual Smart Rectifier controller IC is the industry first dedicated high-voltage controller IC for

synchronous rectification in resonant converter applications. The IC can emulate the operation of the two

secondary rectifier diodes by correctly driving the synchronous rectifier (SR) MOSFETs in the two secondary legs.

The core of this device are two high-voltage, high speed comparators which sense the drain to source voltage of

the MOSFETs differentially. The device current is sensed using the R_DSONas a shunt resistance and the GATE pin

of the MOSFET is driven accordingly. Dedicated internal logic then manages to turn the power device on and off in

close proximity of the zero current transition.

IR1168 further simplifies synchronous rectifier control by offering the following power management features:

-Wide VCC operating range allows the IC to be directly powered from the converter output

-Shoot through protection logic that prevents both the GATE outputs from the IC to be high at the same time

-Device turn ON and OFF in close proximity of the zero current transition with low turn-on and turn-off propagation

delays; eliminates reactive power flow between the output capacitors and power transformer

-Internally clamped gate driver outputs that significantly reduce gate losses.

The SmartRectifier™ control technique is based on sensing the voltage across the MOSFET and comparing it with

two negative thresholds to determine the turn on and off transitions for the device. The rectifier current is sensed

by the input comparators using the power MOSFET R_DSONas a shunt resistance and its GATE is driven depending

on the level of the sensed voltage vs. the 3 thresholds shown below.

V_Gate

V_DS

V_TH2

V_TH1

V_TH3

Figure 1: Input comparator thresholds

Turn-on phase

When the conduction phase of the SR FET is initiated, current will start flowing through its body diode, generating

a negative V_DSvoltage across it. The body diode has generally a much higher voltage drop than the one caused by

the MOSFET on resistance and therefore will trigger the turn-on threshold V_TH2

.

When V_TH2is triggered, IR1168 will drive the gate of MOSFET on which will in turn cause the conduction voltage

VDS to drop down to I_D*R_DSON. This drop is usually accompanied by some amount of ringing, that could trigger the

input comparator to turn off; hence, a fixed Minimum On Time (MOT) blanking period is used that will maintain the

power MOSFET on for a minimum amount of time.

The fixed MOT limits the minimum conduction time of the secondary rectifiers and hence, the maximum switching

frequency of the converter.

Turn-off phase

Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level where

V_DSwill cross the turn-off threshold V_TH1.

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13

IR1168S

Since the device currents are sinusoidal here, the device VDS will cross the V_TH1threshold with a relatively low

dV/dt. Once the threshold is crossed, the current will start flowing again through the body diode, causing the VDS

voltage to jump negative. Depending on the amount of residual current, VDS may once again trigger the turn-on

threshold; hence, VTH2 is blanked for a time duration t_BLANKafter VTH1 is triggered. When the device VDS

crosses the positive reset threshold VTH3, t_BLANKis terminated and the IC is ready for next conduction cycle as

shown below.

V_TH3

I_DS

V_DS

T1

T2

V_TH1

V_TH2

Gate Drive

Blanking

MOT

t_BLANK

time

Figure 2: Secondary currents and voltages

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14

IR1168S

VCC

VCC ON

VCC UVLO

t

UVLO

NORMAL

UVLO

Figure 3: Vcc UVLO

V_TH1

V_DS

V_TH2

t_Don

t_Doff

V_Gate

90%

50%

10%

t_rise

t_fall

Figure 4: Timing waveform

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15

IR1168S

9.0 V

8.5 V

8.0 V

7.5 V

7.0 V

10

1

0.1

0.01

VCC ON

VCC UVLO

6 V

8 V 10 V 12 V 14 V 16 V 18 V

Supply voltage

-50 °C

0 °C

50 °C

Temperature

100 °C 150 °C

Figure 5: Supply Current vs. Supply Voltage

Figure 6: Undervoltage Lockout vs. Temperature

I_QCC

Icc @400KHz, C_LOAD=1nF

14.9

2.70

14.8

14.7

14.6

14.5

14.4

14.3

14.2

14.1

2.65

2.60

2.55

2.50

2.45

2.40

2.35

-50 °C

0 °C

50 °C

Temperature

100 °C

150 °C

-50 °C

0 °C

50 °C

Temperature

100 °C

150 °C

Figure 8: Icc Supply Currrent @1nF Load vs.

Temperature

Figure 7: Icc Quiescent Currrent vs. Temperature

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16

IR1168S

-3.8

-4.0

-4.2

-4.4

-4.6

-4.8

-5.0

-5.2

-124.0

-125.0

-126.0

-127.0

-128.0

-129.0

-130.0

-131.0

Ch2

Ch1

Ch2

Ch1

-50 °C

0 °C

50 °C

100 °C

150 °C

-50 °C

0 °C

50 °C

Temperature

100 °C

150 °C

Temperature

Figure 9: V_TH1vs. Temperature

Figure 10: V_TH2vs. Temperature

810 ns

-119.0

Ch2

Ch1

800 ns

790 ns

780 ns

770 ns

760 ns

750 ns

740 ns

730 ns

-120.0

-121.0

-122.0

-123.0

-124.0

-125.0

-126.0

MOT_Ch1

MOT_Ch2

-50 °C

0 °C

50 °C

100 °C

150 °C

-50 °C

0 °C

50 °C

100 °C

150 °C

Temperature

Figure 11: Comparator Hysteresis vs.

Temperature

Figure 12: MOT vs Temperature

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17

IR1168S

70 ns

65 ns

60 ns

55 ns

50 ns

45 ns

40 ns

35 ns

60 ns

55 ns

50 ns

45 ns

40 ns

35 ns

Ch1 Turn-off Propagation Delay

Ch2 Turn-off Propagation Delay

Ch1 Turn-on Propagation Delay

Ch2 Turn-on Propagation Delay

-50 °C

0 °C

50 °C

100 °C

150 °C

-50 °C

0 °C

50 °C

100 °C

150 °C

Temperature

Figure 13: Turn-on Propagation Delay vs.

Temperature

Figure 14: Turn-off Propagation Delay vs.

Temperature

11.5 V

9 ns

8 ns

Ch1 VGH@Vcc=12V

Ch2 VGH@Vcc=12V

Ch1 VGH@Vcc=18V

Ch2 VGH@Vcc=18V

11.0 V

Tr_Ch1

Tf_Ch1

Tr_Ch2

Tf_Ch2

7 ns

6 ns

5 ns

10.5 V

10.0 V

-50 °C

0 °C

50 °C

100 °C

150 °C

-50 °C

0 °C

50 °C

100 °C

150 °C

Temperature

Figure 15: Gate Clamping Voltage vs.

Temperature

Figure 16: Gate Output Tr and Tf time @ 1nF

Load vs. Temperature

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18

IR1168S

Package Details: SOIC8N

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19

IR1168S

Tape and Reel Details: SOIC8N

LOADED TAPE FEED DIRECTION

A

B

H

D

F

C

NOTE : CONTROLLING

DIMENSION IN MM

E

G

CARRIER TAPE DIMENSION FOR 8SOICN

Metric

Imperial

Min

0.311

0.153

0.46

Code

A

B

C

D

E

F

G

H

Min

7.90

3.90

11.70

5.45

6.30

5.10

1.50

Max

8.10

4.10

12.30

5.55

6.50

5.30

n/a

Max

0.318

0.161

0.484

0.218

0.255

0.208

n/a

0.214

0.248

0.200

0.059

1.60

0.062

F

D

B

C

A

E

G

H

REEL DIMENSIONS FOR 8SOICN

Metric

Imperial

Code

A

B

C

D

E

F

G

H

Min

329.60

20.95

12.80

1.95

98.00

n/a

14.50

12.40

Max

330.25

21.45

13.20

2.45

102.00

18.40

17.10

14.40

Min

12.976

0.824

0.503

0.767

3.858

n/a

Max

13.001

0.844

0.519

0.096

4.015

0.724

0.673

0.566

0.570

0.488

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20

IR1168S

Part Marking Information

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21

IR1168S

Ordering Information

Standard Pack

Base Part Number

Package Type

Complete Part Number

Form

Quantity

Tube/Bulk

95

IR1168SPBF

SOIC8N

IR1168

Tape and Reel

2500

IR1168STRPBF

The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no

responsibility for the consequences of the use of this information. International Rectifier assumes no responsibility for any

infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by

implication or otherwise under any patent or patent rights of International Rectifier. The specifications mentioned in this document are

subject to change without notice. This document supersedes and replaces all information previously supplied.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245

Tel: (310) 252-7105

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22


型号：	IR1168SPBF
厂家：	Infineon
描述：	DUAL SMART RECTIFIER DRIVER IC 双智能整流驱动器IC 驱动器 MOSFET驱动器驱动程序和接口接口集成电路光电二极管 PC
文件：	总22页 (文件大小：364K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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