IPB120N04S4-04 [INFINEON]
车规级MOSFET;
Infineon 
IPB120N04S4-04
OptiMOS™-T2 Power-Transistor
Product Summary
Features
V DS
40
3.6
120
V
• N-channel - Enhancement mode
R DS(on),max
I D
mW
A
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• 100% Avalanche tested
PG-TO263-3-2
Type
Package
Ordering Code Marking
- 4N0404
IPB120N04S4-04
PG-TO263-3-2
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
I D
T C=25°C, V GS=10V
Continuous drain current
120
91
A
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse
E AS
T C=25°C
480
75
I D=60A
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
mJ
A
I AS
-
120
V GS
-
±20
V
P tot
T C=25°C
Power dissipation
79
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.1
page 1
2014-04-07
IPB120N04S4-04
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
1.9
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=40µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
2.0
3.0
4.0
V DS=40V, V GS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
0.01
3
1
µA
V DS=18V, V GS=0V,
T j=85 °C2)
36
I GSS
V GS=20V, V DS=0V
Gate-source leakage current
-
-
100 nA
RDS(on) V GS=10V, I D=100A
Drain-source on-state resistance
-
3.2
3.6
mΩ
Rev. 1.1
page 2
2014-04-07
IPB120N04S4-04
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics1)
C iss
C oss
Crss
t d(on)
t r
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
3150
770
30
4100 pF
1000
V GS=0V, V DS=25V,
f =1MHz
70
11
-
-
-
-
ns
18
V DD=20V, V GS=10V,
I D=120A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
9
15
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
20
7
26
16
55
-
nC
Q gd
V DD=32V, I D=120A,
V GS=0 to 10V
Q g
42
6.0
V plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
I S
-
-
-
-
120
480
T C=25°C
I S,pulse
V GS=0V, I F=100A,
T j=25°C
V SD
Diode forward voltage
-
-
-
0.9
45
50
1.3
V
V R=20V, I F=I S,
di F/dt =100A/µs
Reverse recovery time1)
Reverse recovery charge1)
t rr
-
-
ns
nC
Q rr
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2014-04-07
IPB120N04S4-04
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
80
60
40
20
0
120
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
1 µs
limited by on-state
resistance
10 µs
100
100
10
1
0.5
100 µs
0.1
0.05
10-1
1 ms
0.01
single pulse
10-2
0.1
1
10
100
t p [s]
V DS [V]
Rev. 1.1
page 4
2014-04-07
IPB120N04S4-04
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
12
500
5.5 V
10 V
6 V
10
8
400
300
200
100
0
6
7 V
6.5
V
7 V
4
6.5 V
6 V
10 V
2
5.5 V
5 V
0
0
40
80
120
0
2
4
6
8
V DS [V]
I D [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
240
200
160
120
80
6
5
4
3
2
40
175 °C
25 °C
-55 °C
0
-60
-20
20
60
100
140
180
2
4
6
8
T j [°C]
V GS [V]
Rev. 1.1
page 5
2014-04-07
IPB120N04S4-04
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
4
3.5
3
Ciss
Coss
400µA
103
40µA
2.5
Crss
102
2
1.5
1
101
0
10
20
30
40
-60
-20
20
60
T j [°C]
100
140
180
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD
12 Typ. avalanche characteristics
I AS = f(t AV
)
)
parameter: T j
parameter: Tj(start)
1000
100
25°C
100°C
150°C
25 °C
175 °C
10
1
0.4
0.7
1
1.3
0.1
1
10
t AV [µs]
100
1000
V SD [V]
Rev. 1.1
page 6
2014-04-07
IPB120N04S4-04
Published by
Infineon Technologies AG
Am Campeon 1-12
D-85579 Neubiberg
© Infineon Technologies AG 2014
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 7
2014-04-07
IPB120N04S4-04
Revision History
Version
Date
Changes
1.0
1.1
22.10.2013 Final Datasheet
07.04.2014 Added Avalanche Current
Rev. 1.1
page 8
2014-04-07
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