IPB120N06NG [INFINEON]
OptiMOS㈢ Power-Transistor; OptiMOS㈢功率三极管
| 型号： | IPB120N06NG |
| 厂家： | 
Infineon |
| 描述： | OptiMOS㈢ Power-Transistor |
| 文件： | 总10页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB120N06N G
IPP120N06N G
OptiMOS® Power-Transistor
Product Summary
Features
V DS
60
11.7
75
V
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
R DS(on),max SMDversion
I D
mΩ
A
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPP120N06N G
IPB120N06N G
Type
P-TO220-3-1
120N06N
P-TO263-3-2
120N06N
Package
Marking
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
Continuous drain current
75
53
A
T C=100 °C
T C=25 °C1)
I D,pulse
E AS
Pulsed drain current
300
280
I D=75 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=75 A, V DS=48 V,
di /dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
V GS
Gate source voltage
±20
V
P tot
T C=25 °C
Power dissipation
158
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1) See figure 3
Rev. 1.11
page 1
2006-07-05
IPB120N06N G
IPP120N06N G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
0.95 K/W
R thJA
minimal footprint
62
40
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
DS=V GS, I D=94 µA
Drain-source breakdown voltage
Gate threshold voltage
60
-
-
V
1.2
3
2
V
DS=60 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.01
1
1
µA
T j=25 °C
V
DS=60 V, V GS=0 V,
100
T j=125 °C
I GSS
V
GS=20 V, V DS=60 V
Gate-source leakage current
-
-
10
9.9
9.6
2
100 nA
R DS(on)
V
V
GS=10 V, I D=75 A
GS=10 V, I D=75 A,
Drain-source on-state resistance
12
mΩ
-
11.7
SMD version
R G
g fs
Gate resistance
-
-
-
Ω
|V DS|>2|I D|R DS(on)max
I D=75 A
,
Transconductance
36
72
S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
Rev. 1.11
page 2
2006-07-05
IPB120N06N G
IPP120N06N G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
1600
460
120
14
2100 pF
610
V
GS=0 V, V DS=30 V,
C oss
C rss
t d(on)
t r
f =1 MHz
180
20
40
50
39
ns
27
V
DD=30 V, V GS=10 V,
I D=75 A, R G=6.2 Ω
t d(off)
t f
Turn-off delay time
Fall time
34
26
Gate Charge Characteristics3)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
-
9
5
12
6
nC
Q g(th)
Q gd
21
26
46
5.8
30
32
38
62
-
V
V
DD=30 V, I D=75 A,
GS=0 to 10 V
Q sw
Q g
Gate charge total
V plateau
Q oss
Gate plateau voltage
Output charge
V
V
DD=30 V, V GS=10 V
40
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
75
A
V
T C=25 °C
I S,pulse
300
V
GS=0 V, I F=75 A,
V SD
Diode forward voltage
-
1
1.3
T j=25 °C
t rr
Reverse recovery time
-
-
45
64
60
80
ns
V R=30 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
3) See figure 16 for gate charge parameter definition
Rev. 1.11
page 3
2006-07-05
IPB120N06N G
IPP120N06N G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
180
160
140
120
100
80
90
80
70
60
50
40
30
20
10
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
100
1 µs
limited by on-state
resistance
0.5
10 µs
102
101
100
10-1
100 µs
0.2
0.1
DC
1 ms
10-1
10 ms
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t p [s]
Rev. 1.11
page 4
2006-07-05
IPB120N06N G
IPP120N06N G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R
DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
30
240
220
20 V
5 V
200
10 V
180
5.5 V
20
7 V
160
140
120
100
80
6.5 V
6.5 V
7 V
10 V
6 V
10
20 V
60
5.5 V
40
5V
20
0
0
0
20
40
60
80
0
1
2
3
4
5
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
140
120
100
80
80
60
40
20
0
60
40
175 °C
20
0
25 °C
0
1
2
3
4
5
6
7
0
20
40
60
80
V
GS [V]
I
D [A]
Rev. 1.11
page 5
2006-07-05
IPB120N06N G
IPP120N06N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=75 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
35
30
25
20
4
3.5
3
940 µA
94 µA
2.5
2
98 %
15
1.5
1
typ
10
5
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
175°C 98%
102
101
Ciss
25 °C
103
102
101
Coss
25°C 98%
Crss
175 °C
100
10-1
0
0.5
1
1.5
2
0
10
20
30
DS [V]
40
50
V
SD [V]
V
Rev. 1.11
page 6
2006-07-05
IPB120N06N G
IPP120N06N G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=75 A pulsed
V
I
parameter: T j(start)
parameter: V DD
102
12
25 °C
30 V
100 °C
10
8
12 V
48 V
150 °C
101
6
4
2
100
100
0
0
101
102
103
10
20
30
40
50
t
AV [µs]
Q
gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
75
V GS
Q g
70
65
60
55
50
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.11
page 7
2006-07-05
IPB120N06N G
IPP120N06N G
PG-TO-263 (D²-Pak)
Rev. 1.11
page 8
2006-07-05
IPB120N06N G
IPP120N06N G
PG-TO220-3: Outline
Rev. 1.11
page 9
2006-07-05
IPB120N06N G
IPP120N06N G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.11
page 10
2006-07-05
相关型号：
IPB120N06S402ATMA2
Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB120N06S4H1ATMA1
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB120N06S4H1ATMA2
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
INFINEON
IPB120N08S404ATMA1
Power Field-Effect Transistor, 120A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO263-3-2, 3/2 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明