IPB120N08S4-03 [INFINEON]
仿真/ SPICE-型号;
Infineon 
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
OptiMOS™-T2 Power-Transistor
Product Summary
V DS
80
2.5
120
V
R DS(on),max (SMD version)
mW
A
I D
Features
• N-channel - Enhancement mode
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
4N0803
4N0803
4N0803
IPB120N08S4-03
IPI120N08S4-03
IPP120N08S4-03
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C, V GS=10V1)
I D
Continuous drain current
120
120
A
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse
E AS
T C=25°C
480
920
120
±20
278
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=60A
mJ
A
I AS
-
V GS
-
V
P tot
T C=25°C
Power dissipation
W
T j, T stg
Operating and storage temperature
-
-55 ... +175
°C
Rev. 1.0
page 1
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
-
-
0.54 K/W
62
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=223µA
Drain-source breakdown voltage
Gate threshold voltage
80
2.0
-
-
-
4.0
1
V
3.0
0.01
I DSS
V DS=80V, V GS=0V
Zero gate voltage drain current
µA
V DS=80V, V GS=0V,
T j=125°C2)
-
10
200
I GSS
V GS=20V, V DS=0V
Gate-source leakage current
-
-
-
100 nA
R DS(on) V GS=10V, I D=100A
Drain-source on-state resistance
2.4
2.8
2.5
mW
V GS=10V, I D=100A,
SMD version
-
2.1
Rev. 1.0
page 2
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
8884
3435
177
30
11550 pF
4465
V GS=0V, V DS=25V,
f =1MHz
354
-
-
-
-
ns
15
V DD=40V, V GS=10V,
I D=120A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
60
50
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
43
27
57
55
167
-
nC
Q gd
V DD=64V, I D=120A,
V GS=0 to 10V
Q g
128
4.9
V plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
120
480
T C=25°C
I S,pulse
V GS=0V, I F=100A,
T j=25°C
V SD
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
-
-
-
0.9
80
1.3
V
V R=40V, I F=50A,
di F/dt =100A/µs
t rr
-
-
ns
nC
Q rr
160
1) Current is limited by bondwire; with an R thJC = 0.54K/W the chip is able to carry 245A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS = 10 V; SMD
300
250
200
150
100
50
140
120
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0; SMD
parameter: t p
parameter: D =t p/T
100
1000
1 µs
0.5
10 µs
100 µs
10-1
1 ms
100
0.1
0.05
10-2
10
0.01
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
page 4
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
480
8
6
10 V
6.5 V
6 V
360
240
120
0
5 V
5.5 V
4
5.5 V
6 V
7 V
10 V
5 V
2
0
0
1
2
3
4
5
0
80
160
240
320
V DS [V]
I D [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 120 A; V GS = 10 V; SMD
480
4
3.5
3
-55 °C
25 °C
175 °C
360
240
120
0
2.5
2
1.5
1
2
3
4
5
6
7
8
-60
-20
20
60
100
140
180
V GS [V]
T j [°C]
Rev. 1.0
page 5
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
4
3.5
3
105
104
Ciss
2200 µA
Coss
103
2.5
2
220 µA
Crss
102
1.5
1
101
0
20
40
60
80
-60
-20
20
60
T j [°C]
100
140
180
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD
12 Avalanche characteristics
I A S= f(t AV
)
)
parameter: T j
parameter: Tj(start)
103
1000
102
100
25 °C
100 °C
150 °C
175 °C
25 °C
101
10
100
0
1
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
t AV [µs]
100
1000
V SD [V]
Rev. 1.0
page 6
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
13 Avalanche energy
E AS = f(T j)
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
88
2000
1500
1000
84
80
76
72
30 A
60 A
500
120 A
0
-55
-15
25
65
105
145
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 120 A pulsed
parameter: V DD
10
9
V GS
Q g
8
16 V
7
6
5
4
3
2
1
0
64 V
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
30
60
90
120
150
Q gate [nC]
Rev. 1.0
page 7
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2014
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Revision History
Version
Date
Changes
Revision 1.0
20.06.2014 Final data sheet
Rev. 1.0
page 9
2014-06-20
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