IKB15N65EH5ATMA1 [INFINEON]
Insulated Gate Bipolar Transistor,;
| 型号： | IKB15N65EH5ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总16页 (文件大小：1558K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKB15N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
TRENCHSTOPTMꢀ5ꢀhighꢀspeedꢀswitchingꢀIGBTꢀcopackedꢀwithꢀfullꢀrated
currentꢀRAPIDꢀ1ꢀantiꢀparallelꢀdiode
ꢀ
C
E
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀH5ꢀtechnologyꢀoffering
•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀQG
G
•ꢀIGBTꢀcopackedꢀwithꢀfullꢀratedꢀcurrentꢀRAPIDꢀ1ꢀfastꢀantiparallel
diode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
C
PotentialꢀApplications:
•ꢀEnergyꢀGeneration
ꢀꢀꢀ-ꢀSolarꢀStringꢀInverter
ꢀꢀꢀ-ꢀSolarꢀMicroꢀInverter
G
•ꢀIndustrialꢀPowerꢀSupplies
ꢀꢀꢀ-ꢀIndustrialꢀSMPS
E
ꢀꢀꢀ-ꢀIndustrialꢀUPS
•ꢀMetalꢀTreatment
ꢀꢀꢀ-ꢀWelding
•ꢀEnergyꢀDistribution
ꢀꢀꢀ-ꢀEnergyꢀStorage
•ꢀInfrastructureꢀ–ꢀCharge
ꢀꢀꢀ-ꢀCharger
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.65V 175°C
Marking
Package
PG-TO263-3
IKB15N65EH5
650V
15A
K15EEH5
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
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IKB15N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IC
30.0
18.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
45.0
45.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IF
32.0
21.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
45.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
105.0
52.5
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
1.40 K/W
1.80 K/W
65 K/W
Diode thermal resistance,
junction - case
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
Rth(j-a)
-
-
40 K/W
junction - ambient
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ15.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
650
-
-
V
V
-
-
-
1.65 2.10
1.85
1.95
-
-
Tvjꢀ=ꢀ175°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ15.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.45 1.70
Diode forward voltage
VF
V
1.42
1.39
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.15mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
50
-
µA
1400
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ15.0A
-
-
-
100
-
nA
S
22.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
930
24
4
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ15.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
38.0
7.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
16
17
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ15.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ39.0Ω,ꢀRG(off)ꢀ=ꢀ39.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
145
22
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.40
0.08
0.48
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
15
10
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ7.5A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ39.0Ω,ꢀRG(off)ꢀ=ꢀ39.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
145
27
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.18
0.03
0.21
mJ
mJ
mJ
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
70
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
Qrr
0.50
10.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ600A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-600
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
54
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ7.5A,
Qrr
0.30
11.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ800A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-400
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
16
18
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ15.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ39.0Ω,ꢀRG(off)ꢀ=ꢀ39.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
160
20
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.53
0.10
0.63
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
14
10
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ7.5A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ39.0Ω,ꢀRG(off)ꢀ=ꢀ39.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
160
28
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.27
0.04
0.31
mJ
mJ
mJ
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
100
0.92
13.5
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ550A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-573
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
75
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ7.5A,
Qrr
0.62
13.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ740A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-550
-
A/µs
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
110
100
90
80
70
60
50
40
30
20
10
0
30
25
20
15
10
5
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(VGE≥15V,ꢀTvj≤175°C)
45
40
45
40
VGE=20V
18V
12V
10V
8V
VGE=20V
18V
12V
10V
8V
35
30
25
20
15
10
5
35
30
25
20
15
10
5
7V
7V
6V
6V
5V
5V
4V
4V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=150°C)
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
45
2.25
2.00
1.75
1.50
1.25
1.00
0.75
Tj=25°C
Tj=150°C
IC=3,8A
IC=7,5A
IC=15A
40
35
30
25
20
15
10
5
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
100
10
1
0
5
10 15 20 25 30 35 40 45 50
10 20 30 40 50 60 70 80 90 100 110 120
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀRG=39Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=15A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
typ.
td(off)
tf
td(on)
tr
100
10
1
25
50
75
100
125
150
0
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=15A,ꢀrG=39Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(IC=0.15mA)
2.50
1.2
Eoff
Eon
Ets
Eoff
Eon
Ets
2.25
1.0
0.8
0.6
0.4
0.2
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0.0
0
5
10
15
20
25
30
35
40
45
10 20 30 40 50 60 70 80 90 100 110 120
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀRG=39Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=15A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
0.7
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
200
250
300
350
400
450
500
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=15A,ꢀRG=39Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=15/0V,
IC=15A,ꢀrG=39Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
16
1E+4
130V
520V
Cies
Coes
Cres
14
12
10
8
1000
100
10
6
4
2
0
1
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=15A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
10
Vꢀ2.1
2018-01-11
IKB15N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
1
1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.05
0.05
0.1
0.1
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
5
i:
1
2
3
4
5
ri[K/W]: 0.050353 0.577446 0.630979 0.121142 0.018932
ri[K/W]: 0.067415 0.782038 0.788573 0.146126 0.022837
τi[s]:
4.7E-5
4.8E-4
3.4E-3
0.022142 0.19328
τi[s]:
4.2E-5
4.8E-4
3.3E-3
0.022253 0.192244
0.001
1E-7
0.001
1E-7
1E-6
1E-5
1E-4
0.001
0.01
0.1
1E-6
1E-5
1E-4
0.001
0.01
0.1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
150
1.2
Tj=25°C, IF = 15A
Tj=150°C, IF = 15A
Tj=25°C, IF = 15A
Tj=150°C, IF = 15A
135
1.0
0.8
0.6
0.4
0.2
0.0
120
105
90
75
60
45
30
15
0
400
450
500
550
600
650
700
400
450
500
550
600
650
700
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
Datasheet
11
Vꢀ2.1
2018-01-11
IKB15N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
25.0
-300
-350
-400
-450
-500
-550
-600
-650
-700
Tj=25°C, IF = 15A
Tj=150°C, IF = 15A
Tj=25°C, IF = 15A
Tj=150°C, IF = 15A
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
400
450
500
550
600
650
700
400
450
500
550
600
650
700
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀpeakꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
45
2.00
Tj=25°C
Tj=150°C
IF=7,5A
IF=15A
IF=30A
40
1.75
1.50
1.25
1.00
0.75
35
30
25
20
15
10
5
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2018-01-11
IKB15N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
Package Drawing PG-TO263-3
MIN
4.30
0.00
0.65
0.95
0.33
1.17
8.51
7.10
9.80
6.50
MAX
4.57
0.25
0.85
1.15
0.65
1.40
9.45
7.90
10.31
8.60
MIN
MAX
0.180
0.010
0.033
0.045
0.026
0.055
0.372
0.311
0.406
0.339
0.169
0.000
0.026
0.037
0.013
0.046
0.335
0.280
0.386
0.256
Z8B00003324
0
5
5
0
2.54
5.08
2
0.100
0.200
2
7.5mm
14.61
2.29
0.70
1.00
16.05
9.30
4.50
10.70
3.65
1.25
15.88
3.00
1.60
1.78
16.25
9.50
4.70
10.90
3.85
1.45
0.575
0.090
0.028
0.039
0.632
0.366
0.177
0.421
0.144
0.049
0.625
0.118
0.063
0.070
0.640
0.374
0.185
0.429
0.152
0.057
30-08-2007
01
Datasheet
13
Vꢀ2.1
2018-01-11
IKB15N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.1
2018-01-11
IKB15N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
RevisionꢀHistory
IKB15N65EH5
Revision:ꢀ2018-01-11,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2018-01-11 Final data sheet
Datasheet
15
Vꢀ2.1
2018-01-11
Trademarks
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Publishedꢀby
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