IKB20N60H3 [INFINEON]
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN;
| 型号： | IKB20N60H3 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN 栅 功率控制 晶体管 |
| 文件： | 总16页 (文件大小：1755K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
HighꢀspeedꢀDuoPack:ꢀIGBTꢀinꢀTrenchꢀandꢀFieldstopꢀtechnology
withꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀdiode
IKB20N60H3
600Vꢀhighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
HighꢀspeedꢀIGBTꢀinꢀTrenchꢀandꢀFieldstopꢀtechnology
ꢀ
C
E
Features:
TRENCHSTOPTMꢀtechnologyꢀoffering
•ꢀveryꢀlowꢀVCEsat
•ꢀlowꢀEMI
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀdiode
•ꢀmaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀcompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
G
C
Applications:
•ꢀuninterruptibleꢀpowerꢀsupplies
•ꢀweldingꢀconverters
•ꢀconvertersꢀwithꢀhighꢀswitchingꢀfrequency
G
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.95V 175°C
Marking
Package
IKB20N60H3
600V
20A
K20H603
PG-TO263-3
2
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
Maximumꢀratings
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IC
40.0
20.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
80.0
80.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
20.0
10.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
80.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
5
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
170.0
85.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
0.88
1.89
65
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
Rth(j-a)
40
K/W
junction - ambient
4
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ2.00mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ20.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
600
-
-
V
V
-
-
-
1.95 2.40
2.30
2.50
-
-
Tvjꢀ=ꢀ175°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ10.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.65 2.05
Diode forward voltage
VF
V
V
1.67
1.65
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.29mA,ꢀVCEꢀ=ꢀVGE
4.1
5.1
5.7
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
-
40.0 µA
1500.0
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ20.0A
-
-
-
100
-
nA
S
10.9
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
1100
70
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
32
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
-
-
120.0
120
-
-
nC
A
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V,
tSCꢀ≤ꢀ5µs
Tvjꢀ=ꢀ150°C
IC(SC)
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
16
20
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ14.6Ω,ꢀLσꢀ=ꢀ75nH,
Cσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
194
11
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.45
0.24
0.69
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
112
0.39
11.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ10.0A,
diF/dtꢀ=ꢀ1000A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-750
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
16
15
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ14.6Ω,ꢀLσꢀ=ꢀ75nH,
Cσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
227
14
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.60
0.36
0.96
mJ
mJ
mJ
Turn-off energy
Total switching energy
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
191
0.91
14.2
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ10.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-500
-
A/µs
6
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
60
50
40
30
20
10
0
100
10
1
tp=1µs
10µs
50µs
TC=80°
TC=110°
TC=80°
100µs
200µs
500µs
DC
TC=110°
0.1
1
10
100
1000
1
10
100
1000
f,ꢀSWITCHINGꢀFREQUENCYꢀ[kHz]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀswitching
Figure 2. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTj≤175°C;ꢀVGE=15V)
frequency
(Tj≤175°C,ꢀD=0.5,ꢀVCE=400V,ꢀVGE=15/0V,
rG=14,6Ω)
180
160
140
120
100
80
40
35
30
25
20
15
10
5
60
40
20
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 3. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 4. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tj≤175°C)
(VGE≥15V,ꢀTj≤175°C)
7
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
VGE=20V
17V
15V
13V
11V
9V
VGE=20V
17V
15V
13V
11V
9V
7V
7V
5V
5V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tj=25°C)
Figure 6. Typicalꢀoutputꢀcharacteristic
(Tj=175°C)
70
4.0
Tj=25°C
Tj=175°C
IC=10A
IC=20A
IC=40A
60
50
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
5
6
7
8
9
10
11
12
0
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 8. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
8
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
1000
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
0
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
45
50
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
rG=14,6Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
IC=20A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
6.0
typ.
min.
max.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
td(off)
tf
td(on)
tr
100
10
1
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 12. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(ind.ꢀload,ꢀVCE=400V,ꢀVGE=15/0V,ꢀIC=20A,
rG=14,6Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(IC=0.29mA)
9
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
2.5
2.0
1.5
1.0
0.5
0.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
Eoff
Eon
Ets
Eoff
Eon
Ets
4
8
12
16
20
24
28
32
36
40
5
10
15
20
25
30
35
40
45
50
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
functionꢀofꢀgateꢀresistor
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
rG=14,6Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
IC=20A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
1.0
0.8
0.6
0.4
0.2
0.0
1.50
1.25
1.00
0.75
0.50
0.25
0.00
Eoff
Eon
Ets
Eoff
Eon
Ets
25
50
75
100
125
150
175
200
250
300
350
400
450
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Figure 16. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(ind.ꢀload,ꢀTj=175°C,ꢀVGE=15/0V,ꢀIC=20A,
rG=14,6Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(indꢀload,ꢀVCE=400V,ꢀVGE=15/0V,ꢀIC=20A,
rG=14,6Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
10
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
16
14
12
10
8
120V
480V
1000
100
10
Cies
Coes
Cres
6
4
2
0
0
20
40
60
80
100
120
140
0
10
20
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀgateꢀcharge
(IC=20A)
Figure 18. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
300
250
200
150
100
50
15
12
9
6
3
0
10
12
14
16
18
20
10
11
12
13
14
15
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 19. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 20. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(VCE≤400V,ꢀstartꢀatTj=25°C)
(VCE≤400V,ꢀstartꢀatꢀTj≤150°C)
11
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
1
1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.1
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
i:
ri[K/W]: 0.4398 0.6662 0.4734 0.3169
τi[s]: 1.3E-4 1.1E-3 7.1E-3 0.04629
1
2
3
4
ri[K/W]: 0.07041042 0.3070851 0.3198984 0.1871538
τi[s]: 9.6E-5 6.8E-4 0.01084623 0.06925485
0.001
1E-6
0.001
1E-5
1E-4
0.001
0.01
0.1
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 21. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
Figure 22. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
250
1.00
Tj=25°C, IF = 20A
Tj=175°C, IF = 20A
Tj=25°C, IF = 20A
Tj=175°C, IF = 20A
200
150
100
50
0.75
0.50
0.25
0.00
600
800
1000
1200
1400
1600
800 900 1000 1100 1200 1300 1400 1500 1600
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 24. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
12
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
18
16
14
12
10
8
0
-200
Tj=25°C, IF = 20A
Tj=175°C, IF = 20A
Tj=25°C, IF = 20A
Tj=175°C, IF = 20A
-400
-600
-800
-1000
-1200
-1400
6
800 900 1000 1100 1200 1300 1400 1500 1600
800 900 1000 1100 1200 1300 1400 1500 1600
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 25. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 26. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
40
2.50
Tj=25°C
IF=5A
Tj=175°C
IF=10A
IF=20A
35
30
25
20
15
10
5
2.25
2.00
1.75
1.50
1.25
1.00
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 28. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
13
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
PG-TO263-3
MIN
4.30
0.00
0.65
0.95
0.33
1.17
8.51
7.10
9.80
6.50
MAX
4.57
0.25
0.85
1.15
0.65
1.40
9.45
7.90
MIN
MAX
0.180
0.010
0.033
0.045
0.026
0.055
0.372
0.311
0.406
0.339
0.169
0.000
0.026
0.037
0.013
0.046
0.335
0.280
Z8B00003324
0
10.31
8.60
0.386
0.256
5
5
0
2.54
5.08
2
0.100
0.200
2
7.5mm
14.61
2.29
0.70
1.00
16.05
9.30
4.50
10.70
3.65
1.25
15.88
3.00
1.60
1.78
16.25
9.50
4.70
10.90
3.85
1.45
0.575
0.090
0.028
0.039
0.632
0.366
0.177
0.421
0.144
0.049
0.625
0.118
0.063
0.070
0.640
0.374
0.185
0.429
0.152
0.057
30-08-2007
01
14
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
vGE(t)
90% VGE
a
b
a
b
t
iC(t)
90% IC
10% IC
90% IC
10% IC
t
vCE(t)
t
t
td(off)
tf
td(on)
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
2% IC
t
vCE(t)
2% VCE
t
t1
t2
t3
t4
15
Rev.ꢀ2.3,ꢀꢀ2014-03-12
IKB20N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
RevisionꢀHistory
IKB20N60H3
Revision:ꢀ2014-03-12,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2010-07-26 Preliminary datasheet
2013-12-09 New value IRmax limit at 175°C
1.1
2.1
2.2
2.3
2014-02-26 Without PB free logo
2014-03-12 Max ratings Vce, Tvj ≥ 25°C
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and/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbe
endangered.
16
Rev.ꢀ2.3,ꢀꢀ2014-03-12
相关型号：
IKB20N60T
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
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