IKCM10B60HA [INFINEON]
Control Integrated POwer System;
| 型号： | IKCM10B60HA |
| 厂家： | 
Infineon |
| 描述： | Control Integrated POwer System |
| 文件： | 总16页 (文件大小：544K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Control Integrated POwer
System (CIPOS™)
IKCM10B60HA
Datasheet
For Power Management Application
1
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Table of Contents
CIPOS™ Control Integrated POwer System ........................................................................................................3
Features..............................................................................................................................................................3
Target Applications...........................................................................................................................................3
Description.........................................................................................................................................................3
System Configuration .......................................................................................................................................3
Pin Configuration....................................................................................................................................................4
Internal Electrical Schematic.................................................................................................................................4
Pin Assignment.......................................................................................................................................................5
Pin Description ..................................................................................................................................................5
HIN(U,V,W) and LIN(U,V,W) (Low side and high side control pins, Pin 7 - 12)................................................5
VFO (Fault-output Pin 14) .................................................................................................................................6
ITRIP (Over current detection function, Pin 15) ................................................................................................6
VDD, VSS (Low side control supply and reference, Pin 13, 16).......................................................................6
VB(U,V,W) and VS(U,V,W) (High side supplies, Pin 1 - 6)...............................................................................6
N (Low side common emitter, Pin 17) ...............................................................................................................6
W, V, U (High side emitter and low side collector, Pin 18 - 20) ........................................................................6
P, NR (Positive bus input voltage and negative bus voltage, Pin 21, 24).........................................................6
R, S (Single phase diode bridge rectifier input pins, Pin 22, 23).......................................................................6
Absolute Maximum Ratings...................................................................................................................................7
Module Section..................................................................................................................................................7
Inverter Section..................................................................................................................................................7
Rectifier Diode Section .....................................................................................................................................7
Control Section..................................................................................................................................................8
Recommended Operation Conditions..................................................................................................................8
Static Parameters ...................................................................................................................................................9
Dynamic Parameters ............................................................................................................................................10
Bootstrap Parameters ..........................................................................................................................................10
Mechanical Characteristics and Ratings............................................................................................................11
Circuit of a Typical Application...........................................................................................................................12
Switching Times Definition..................................................................................................................................12
Electrical characteristic .......................................................................................................................................13
Package Outline....................................................................................................................................................14
Datasheet
2
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
CIPOS™
Control Integrated POwer System
Dual In-Line Intelligent Power Module
3Φ-bridge 600V / 10A
Features
Description
Fully isolated Dual In-Line molded module
The CIPOS™ module family offers the chance for
integrating various power and control components
to increase reliability, optimize PCB size and system
costs.
TrenchStop® IGBTs
Optimized diodes for single phase diode bridge
rectifier
It is designed to control three phase AC motors and
permanent magnet motors in variable speed drives
for applications like a washing machine. The
package concept is specially adapted to power
applications, which need good thermal conduction
and electrical isolation, but also EMI-save control
and overload protection.
Rugged SOI gate driver technology with stability
against transient and negative voltage
Allowable negative VS potential up to -11V for
signal transmission at VBS=15V
Integrated bootstrap functionality
Over current shutdown
TrenchStop® IGBTs and anti parallel diodes are
combined with an optimized SOI gate driver for
excellent electrical performance.
Under-voltage lockout at all channels
Low side common emitter
Cross-conduction prevention
System Configuration
All of 6 switches turn off during protection
Minimum deadtime built in driver IC
Lead-free terminal plating; RoHS compliant
3 half bridges with TrenchStop® IGBTs and anti
parallel diodes
Single phase diode bridge rectifier
3Φ SOI gate driver
Target Applications
Washing machines
Fans
Pin-to-heatsink creepage distance typ. 1.6mm
Low power motor drives
Datasheet
3
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Pin Configuration
Bottom View
Figure 1: Pin configuration
Internal Electrical Schematic
Figure 2: Internal schematic
Datasheet
4
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Pin Assignment
Pin Number Pin Name
Pin Description
1
VS(U)
VB(U)
VS(V)
VB(V)
VS(W)
VB(W)
HIN(U)
HIN(V)
HIN(W)
LIN(U)
LIN(V)
LIN(W)
VDD
VFO
ITRIP
VSS
N
U-phase high side floating IC supply offset voltage
U-phase high side floating IC supply voltage
V-phase high side floating IC supply offset voltage
V-phase high side floating IC supply voltage
W-phase high side floating IC supply offset voltage
W-phase high side floating IC supply voltage
U-phase high side gate driver input
V-phase high side gate driver input
W-phase high side gate driver input
U-phase low side gate driver input
V-phase low side gate driver input
W-phase low side gate driver input
Low side control supply
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Fault output
Over-current shutdown input
Low side control negative supply
Low side common emitter
W
Motor W-phase output
V
Motor V-phase output
U
Motor U-phase output
P
Positive bus input voltage
S
Single phase diode bridge rectifier S input
Single phase diode bridge rectifier R input
Negative bus voltage
R
NR
Pin Description
HIN(U,V,W) and LIN(U,V,W) (Low side and high
side control pins, Pin 7 - 12)
5k
These pins are positive logic and they are
responsible for the control of the integrated IGBT.
The Schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3V controller outputs. Pull-down resistor
of about 5k is internally provided to pre-bias inputs
during supply start-up and a zener clamp is
provided for pin protection purposes. Input Schmitt-
trigger and noise filter provide beneficial noise
rejection to short input pulses.
Figure 3: Input pin structure
The noise filter suppresses control pulses which are
below the filter time tFILIN. The filter acts according to
Figure 4.
Figure 4: Input filter timing diagram
Datasheet
5
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
It is recommended for proper work of CIPOS™ not
to provide input pulse-width lower than 1us.
VB(U,V,W) and VS(U,V,W) (High side supplies,
Pin 1 - 6)
The integrated gate drive provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of two gate drivers of the
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3
and LO3). When two inputs of a same leg are
activated, only former activated one is activated so
that the leg is kept steadily in a safe state.
VB to VS is the high side supply voltage. The high
side circuit can float with respect to VSS following
the external high side power device emitter voltage.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 12.1V and a
falling threshold of VBSUV- = 10.4V.
A minimum deadtime insertion of typically 380ns is
also provided by driver IC, in order to reduce cross-
conduction of the external power switches.
VS(U,V,W) provide a high robustness against
negative voltage in respect of VSS of -50V
transiently. This ensures very stable designs even
under rough conditions.
VFO (Fault-output Pin 14)
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered
over current detection at ITRIP. A pull-up resistor is
externally required to bias the NTC.
N (Low side common emitter, Pin 17)
The low side common emitter is available for current
measurement. It is recommended to keep the
connection to pin VSS as short as possible in order
to avoid unnecessary inductive voltage drops.
VDD
RON,FLT
>1
VFO
VSS
from ITRIP -Latch
W, V, U (High side emitter and low side collector,
from uv-detection
CIPOS™
Pin 18 - 20)
These pins are motor U, V, W input pins
P, NR (Positive bus input voltage and negative
bus voltage, Pin 21, 24)
Figure 5: Internal circuit at pin VFO
The high side IGBT are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 450 V. The bus voltage is referenced to NR
ground.
ITRIP (Over current detection function, Pin 15)
CIPOS™ provides an over current detection
function by connecting the ITRIP input with the
motor current feedback. The ITRIP comparator
threshold (typ. 0.47V) is referenced to VSS ground.
A input noise filter (typ: tITRIPMIN = 530ns) prevents
the driver to detect false over-current events.
R, S (Single phase diode bridge rectifier input
pins, Pin 22, 23)
Rectifier input pins for connecting to the grid line.
Over current detection generates a shut down of all
outputs of the gate driver after the shutdown
propagation delay of typically 1000ns.
The fault-clear time is set to typical 65us.
VDD, VSS (Low side control supply and
reference, Pin 13, 16)
VDD is the low side supply and it provides power
both to input logic and to low side output power
stage. Input logic is referenced to VSS ground.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1V is present.
The IC shuts down all the gate drivers’ power
outputs, when the VDD supply voltage is below
VDDUV- = 10.4V. This prevents the external power
switches from critically low gate voltage levels
during on-state and therefore from excessive power
dissipation.
Datasheet
6
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Absolute Maximum Ratings
(VDD = 15V and TC = 25°C, if not stated otherwise)
Module Section
Value
Description
Condition
Symbol
Unit
min
-40
max
125
-
Storage temperature range
Insulation test voltage
°C
V
Tstg
VISOL
TC
RMS, f = 60Hz, t =1min
Refer to Figure 6
2000
-40
Operating case temperature range
100
°C
Inverter Section
Description
Value
Condition
Symbol
Unit
min
max
-
Max. blocking voltage
IC = 250µA
VCES
VPN
600
V
V
V
DC link supply voltage of P-N
DC link supply voltage (surge) of P-N
Applied between P-N
Applied between P-N
-
-
450
500
VPN(surge)
TC = 25°C, TJ < 150°C
TC = 80°C, TJ < 150°C
-10
-6
10
6
Output current
IC
A
Maximum peak output current
Short circuit withstand time1
less than 1ms
IC
tSC
-16
-
16
5
A
µs
VDC ≤400V, TJ = 150°C
Power dissipation per IGBT
Ptot
22.1
150
6.78
7.7
W
Operating junction temperature range
Single IGBT thermal resistance
Single diode thermal resistance
TJ
-40
°C
Junction-case
Junction-case
K/W
K/W
RthJC
RthJCD
Rectifier Diode Section
Description
Value
Condition
Symbol
Unit
min
900
-
max
-
Maximum repetitive reverse voltage
RMS forward current
VRRM
IFRM
V
A
TC = 100°C, TJ < 150°C
10
50Hz, Non repetitive
TC = 25°C
TC = 125°C
-
130
110
Peak surge forward current
I2t - value
IFSM
A
tp = 10ms
TC = 25°C
TC = 125°C
84
60
I2t
-
A2s
Operating junction temperature range
Single Diode thermal resistance
TJ(RD)
-40
-
150
6.2
°C
Junction-case
RthJC(RD)
K/W
1 Allowed number of short circuits: <1000; time between short circuits: >1s.
Datasheet
7
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Control Section
Value
Description
Condition
Symbol
Unit
min
max
Module supply voltage
VDD
VBS
-1
20
V
V
High side floating supply voltage
(VB vs. VS)
-1
20
VIN
VITRIP
-1
-1
10
10
Input voltage
LIN, HIN, ITRIP
V
Switching frequency
fPWM
-
20
kHz
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Value
Description
DC link supply voltage of P-N
Symbol
Unit
min
0
typ
-
max
450
VPN
VBS
VDD
V
V
V
High side floating supply voltage (VB vs. VS)
Low side supply voltage
13.5
14.0
-
18.5
18.5
16
ΔVBS,
ΔVDD
-1
-1
1
1
Control supply variation
-
V/µs
VIN
VITRIP
0
0
5
5
Logic input voltages LIN,HIN,ITRIP
Between VSS - N (including surge)
-
-
V
V
VSS
-5
5
Figure 6: TC measurement point2
2Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and
brings wrong or different information.
Datasheet
8
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Static Parameters
(VDD = 15V and TC = 25°C, if not stated otherwise)
Value
typ
Description
Condition
Symbol
Unit
min
max
Iout = 6A
-
-
1.8
2.3
2.6
-
Collector-Emitter saturation voltage
VCE(sat)
V
TJ = 25°C
150°C
Iout = -6A
-
-
1.75
1.8
2.35
Emitter-Collector forward voltage
VF
V
TJ = 25°C
150°C
Iin= -10A
25°C
150°C
-
-
1
0.95
1.4
-
Rectifier diode forward voltage
Collector-Emitter leakage current
VFR
V
-
-
VCE = 600V
ICES
-
1
mA
Logic "1" input voltage (LIN,HIN)
Logic "0" input voltage (LIN,HIN)
ITRIP positive going threshold
ITRIP input hysteresis
VIH
VIL
-
2.1
0.9
470
70
2.5
V
V
0.7
400
40
-
540
-
VIT,TH+
VIT,HYS
mV
mV
VDD and VBS supply under voltage
positive going threshold
VDDUV+
VBSUV+
10.8
9.5
1.0
9.0
-
12.1
10.4
1.7
13.0
11.2
-
V
V
VDD and VBS supply under voltage
negative going threshold
VDDUV-
VBSUV-
VDD and VBS supply under voltage
lockout hysteresis
VDDUVH
VBSUVH
V
Input clamp voltage
(HIN, LIN, ITRIP)
Iin = 4mA
VINCLAMP
10.1
300
370
12.5
500
900
V
Quiescent VBx supply current
(VBx only)
HIN = 0V
IQBS
µA
µA
Quiescent VDD supply current
(VDD only)
LIN = 0V, HINX = 5V
IQDD
IIN+
-
Input bias current
VIN = 5V
-
-
-
-
-
1
2
1.5
mA
µA
µA
nA
V
Input bias current
VIN = 0V
-
IIN-
IITRIP+
IFO
ITRIP input bias current
VFO input bias current
VFO output voltage
VITRIP = 5V
65
2
150
VFO = 5V, VITRIP = 0V
IFO = 10mA, VITRIP = 1V
-
-
VFO
0.5
Datasheet
9
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Dynamic Parameters
(VDD = 15V and TC = 25°C, if not stated otherwise)
Value
typ
600
15
Description
Condition
Symbol
Unit
min
max
Turn-on propagation delay time
Turn-on rise time
ton
tr
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
LIN,HIN = 5V; Iout = 6A,
DC = 300V
Turn-on switching time
Reverse recovery time
Turn-off propagation delay time
Turn-off fall time
tc(on)
trr
80
90
toff
-
-
770
90
-
-
V
V
LIN,HIN = 0V; Iout = 6A,
DC = 300V
tf
Turn-off switching time
Short circuit propagation delay time
Input filter time ITRIP
tc(off)
tSCP
tITRIPmin
125
1200
530
From VIT,TH+ to 10% ISC
VITRIP = 1V
-
-
Input filter time at LIN, HIN for turn
on and off
VLIN,HIN = 0V & 5V
VITRIP = 1V
tFILIN
tFLTCLR
DTPWM
DTIC
290
65
ns
µs
µs
ns
Fault clear time after ITRIP-fault
40
200
Deadtime between low side and high
side
0.5
Deadtime of gate drive circuit
380
V
DC = 300V, IC = 6A,
IGBT turn-on energy (includes
reverse recovery of diode)
-
-
95
135
-
-
TJ = 25°C
150°C
Eon
Eoff
Erec
µJ
µJ
µJ
VDC = 300V, IC = 6A,
TJ = 25°C
-
-
95
135
-
-
IGBT turn-off energy
150°C
VDC = 300V, IC = 6A,
TJ = 25°C
-
-
25
50
-
-
Diode recovery energy
150°C
Bootstrap Parameters
(TC = 25°C, if not stated otherwise)
Value
Description
Condition
Symbol
VRRM
Unit
min
typ
max
Repetitive peak reverse
voltage
600
V
VS2 or VS3=300V, TJ=25°C
Bootstrap resistance of VS2 and VS3=0V, TJ=25°C
35
40
50
65
RBS1
U-phase1
VS2 or VS3=300V, TJ=125°C
VS2 and VS3=0V, TJ=125°C
Reverse recovery time
Forward voltage drop
IF = 0.6A, di/dt = 80A/µs
trr_BS
50
ns
V
IF = 20mA, VS2 and VS3 = 0V
VF_BS
2.6
1 RBS2 and RBS3 have same values to RBS1
.
Datasheet
10
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Mechanical Characteristics and Ratings
Value
typ
Description
Condition
Unit
min
0.59
-50
-
max
0.78
100
-
Mounting torque
M3 screw and washer
Refer to Figure 7
0.69
-
Nm
µm
g
Flatness
Weight
6.15
Figure 7: Flatness measurement position
Datasheet
11
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Circuit of a Typical Application
Figure 8: Application circuit
Switching Times Definition
Figure 9: Switching times definition
Datasheet
12
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Electrical characteristic
16
16
14
12
10
8
16
14
12
10
8
VDD=15V
TJ=25℃
14
12
10
8
6
6
6
TJ=25℃
TJ=25℃
TJ=150℃
4
4
4
VDD=15V
VDD=20V
TJ=150℃
2
2
2
0
0
0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE(sat), Collector - Emitter voltage [V]
VCE(sat), Collector - Emitter voltage [V]
V , Emitter - Collector voltage [V]
F
Typ. Collector – Emitter saturation voltage
Typ. Collector – Emitter saturation voltage
Typ. Emitter – Collector forward voltage
1.2
0.30
140
VDC=300V
VDD=15V
VDC=300V
1.1
High side @TJ=25℃
VDD=15V
120
High side @TJ=150℃
1.0
0.9
0.25
High side @TJ=25℃
Low side @TJ=25℃
High side @TJ=150℃
Low side @TJ=150℃
100
High side @TJ=25℃
0.8
0.20
Low side @TJ=25℃
High side @TJ=150℃
Low side @TJ=150℃
0.7
80
Low side @TJ=25℃
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.15
0.10
0.05
Low side @TJ=150℃
60
40
20
0
VDC=300V
VDD=15V
0.00
0
2
4
6
8
10
12
14
16
16
16
0
2
4
6
8
10
12
14
16
16
16
0
2
4
6
8
10
12
14
16
Ic, Collector current [A]
Ic, Collector current [A]
Ic, Collector current [A]
Typ. Turn on switching energy loss
Typ. Turn off switching energy loss
Typ. Reverse recovery energy loss
450
1100
740
VDC=300V
VDD=15V
VDC=300V
VDD=15V
VDC=300V
VDD=15V
1050
1000
950
900
850
800
750
700
650
600
400
350
300
250
200
150
100
50
720
700
680
660
640
620
600
580
560
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
16
Ic, Collector current [A]
Ic, Collector current [A]
Ic, Collector current [A]
Typ. Turn on propagation delay time
Typ. Turn on switching time
Typ. Turn off propagation delay time
10
300
330
300
270
240
210
180
150
120
90
VDC=300V
VDD=15V
VDC=300V
VDD=15V
275
250
225
200
175
150
125
100
75
1
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
High side @TJ=25℃
High side @TJ=150℃
Low side @TJ=25℃
Low side @TJ=150℃
0.1
D : duty ratio
D=50%
D=20%
D=10%
D=5%
D=2%
0.01
Single pulse
1E-3
1E-4
60
30
50
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
1E-7 1E-6 1E-5 1E-4 1E-3 0.01
0.1
1
10
100
t
, Pulse w idth [sec.]
Ic, Collector current [A]
Ic, Collector current [A]
P
Typ. Turn off switching time
Typ. Reverse recovery time
IGBT transient thermal resistance at all six
IGBTs operation
Datasheet
13
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Package Outline
Datasheet
14
Ver. 1.0, 2014-03-01
CIPOS™ IKCM10B60HA
Revision History
Major changes since the last revision
Page or Reference
Description of change
Datasheet
15
Ver. 1.0, 2014-03-01
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™,
DI-POL™, DrBLADE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™,
HybridPACK™, ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™,
POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™,
SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™
of ARM Limited, UK. ANSI™ of American National Standards Institute. AUTOSAR™ of AUTOSAR development partnership. Bluetooth™ of Bluetooth
SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of
Epcos AG. FLEXGO™ of Microsoft Corporation. HYPERTERMINAL™ of Hilgraeve Incorporated. MCS™ of Intel Corp. IEC™ of Commission
Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE
OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ of Openwave Systems Inc. RED HAT™
of Red Hat, Inc. RFMD™ of RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of
Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of
Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design
Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex.
Last Trademarks Update 2014-07-17
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Edition 2014-06-01
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