IKB20N65EH5 [INFINEON]
IGBT TRENCHSTOP™ 5;型号: | IKB20N65EH5 |
厂家: | Infineon |
描述: | IGBT TRENCHSTOP™ 5 双极性晶体管 |
文件: | 总16页 (文件大小:1565K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IKB20N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
TRENCHSTOPTMꢀ5ꢀhighꢀspeedꢀswitchingꢀIGBTꢀcopackedꢀwithꢀfullꢀrated
currentꢀRAPIDꢀ1ꢀantiꢀparallelꢀdiode
ꢀ
C
E
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀH5ꢀtechnologyꢀoffering
•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀQG
G
•ꢀIGBTꢀcopackedꢀwithꢀfullꢀratedꢀcurrentꢀRAPIDꢀ1ꢀfastꢀantiparallel
diode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
C
PotentialꢀApplications:
•ꢀEnergyꢀGeneration
ꢀꢀꢀ-ꢀSolarꢀStringꢀInverter
ꢀꢀꢀ-ꢀSolarꢀMicroꢀInverter
G
•ꢀIndustrialꢀPowerꢀSupplies
ꢀꢀꢀ-ꢀIndustrialꢀSMPS
E
ꢀꢀꢀ-ꢀIndustrialꢀUPS
•ꢀMetalꢀTreatment
ꢀꢀꢀ-ꢀWelding
•ꢀEnergyꢀDistribution
ꢀꢀꢀ-ꢀEnergyꢀStorage
•ꢀInfrastructureꢀ–ꢀCharge
ꢀꢀꢀ-ꢀCharger
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.65V 175°C
Marking
Package
PG-TO263-3
IKB20N65EH5
650V
20A
K20EEH5
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
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IKB20N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IC
38.0
25.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
60.0
60.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
Tcꢀ=ꢀ100°C
IF
40.0
27.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
60.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
125.0
62.5
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
1.20 K/W
1.50 K/W
65 K/W
Diode thermal resistance,
junction - case
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
Rth(j-a)
-
-
40 K/W
junction - ambient
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ20.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
650
-
-
V
V
-
-
-
1.65 2.10
1.85
1.95
-
-
Tvjꢀ=ꢀ175°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ20.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.45 1.70
Diode forward voltage
VF
V
1.42
1.39
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.20mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
50
-
µA
1400
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ20.0A
-
-
-
100
-
nA
S
24.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
1200
30
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
5
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
48.0
7.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
21
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ32.0Ω,ꢀRG(off)ꢀ=ꢀ32.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
160
23
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.56
0.13
0.69
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
17
11
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ10.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ32.0Ω,ꢀRG(off)ꢀ=ꢀ32.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
160
27
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.23
0.05
0.28
mJ
mJ
mJ
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
80
0.50
8.5
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ20.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ800A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-750
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
56
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ10.0A,
Qrr
0.36
10.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ860A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-500
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
22
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ32.0Ω,ꢀRG(off)ꢀ=ꢀ32.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
180
19
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.70
0.15
0.85
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
17
12
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ10.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ32.0Ω,ꢀRG(off)ꢀ=ꢀ32.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
180
23
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.34
0.06
0.40
mJ
mJ
mJ
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
108
1.08
13.5
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ20.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ800A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-620
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
80
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ10.0A,
Qrr
0.77
13.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ750A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-650
-
A/µs
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
130
120
110
100
90
40
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(VGE≥15V,ꢀTvj≤175°C)
60
55
50
60
55
50
VGE=18V
VGE=18V
45
45
15V
15V
40
40
12V
12V
35
35
10V
10V
8V
7V
6V
5V
8V
7V
6V
5V
4V
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=150°C)
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
60
2.00
1.75
1.50
1.25
1.00
0.75
0.50
Tj=25°C
Tj=150°C
IC=5A
IC=10A
IC=20A
55
50
45
40
35
30
25
20
15
10
5
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
td(off)
tf
td(on)
tr
td(off)
tf
100
td(on)
tr
100
10
1
10
1
0
5
10 15 20 25 30 35 40 45 50 55 60
10
20
30
40
50
60
70
80
90 100
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG=32Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=20A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
typ.
td(off)
tf
td(on)
tr
100
10
1
25
50
75
100
125
150
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=20A,ꢀRG=32Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(IC=0.2mA)
3.5
1.6
Eoff
Eon
Eoff
Eon
Ets
Ets
1.4
3.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10 15 20 25 30 35 40 45 50 55 60
10
20
30
40
50
60
70
80
90 100
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG=32Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=20A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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2018-01-11
IKB20N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
1.2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
200
250
300
350
400
450
500
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=20A,ꢀRG=32Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=20A,ꢀRG=32Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
16
1E+4
130V
520V
Cies
Coes
Cres
14
12
10
8
1000
100
10
6
4
2
0
1
0
5
10 15 20 25 30 35 40 45 50
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=20A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
10
Vꢀ2.1
2018-01-11
IKB20N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
1
1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.05
0.05
0.1
0.1
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
5
6
i:
1
2
3
4
5
6
ri[K/W]: 0.014628 0.379807 0.573028 0.211451 0.018267 2.3E-3
ri[K/W]: 0.024075 0.499909 0.710519 0.239699 0.020917 2.5E-3
τi[s]:
1.5E-5
3.4E-4
2.4E-3
0.013923 0.197253 2.48511
τi[s]:
1.6E-5
3.4E-4
2.3E-3
0.014107 0.195819 2.379491
0.001
1E-7
0.001
1E-7
1E-6
1E-5
1E-4
0.001
0.01
0.1
1E-6
1E-5
1E-4
0.001
0.01
0.1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
130
1.4
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
120
110
100
90
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
500
700
900
1100
1300
1500
500
700
900
1100
1300
1500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
Datasheet
11
Vꢀ2.1
2018-01-11
IKB20N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
18
0
-100
-200
-300
-400
-500
-600
-700
-800
-900
-1000
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
16
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
14
12
10
8
6
4
2
0
500
700
900
1100
1300
1500
500
700
900
1100
1300
1500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀpeakꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
60
2.00
Tj=25°C
Tj=150°C
50
40
30
20
10
0
1.75
IF=10A
IF=20A
IF=40A
1.50
1.25
1.00
0.75
0.0
0.5
1.0
1.5
2.0
2.5
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2018-01-11
IKB20N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
Package Drawing PG-TO263-3
MIN
4.30
0.00
0.65
0.95
0.33
1.17
8.51
7.10
9.80
6.50
MAX
4.57
0.25
0.85
1.15
0.65
1.40
9.45
7.90
10.31
8.60
MIN
MAX
0.180
0.010
0.033
0.045
0.026
0.055
0.372
0.311
0.406
0.339
0.169
0.000
0.026
0.037
0.013
0.046
0.335
0.280
0.386
0.256
Z8B00003324
0
5
5
0
2.54
5.08
2
0.100
0.200
2
7.5mm
14.61
2.29
0.70
1.00
16.05
9.30
4.50
10.70
3.65
1.25
15.88
3.00
1.60
1.78
16.25
9.50
4.70
10.90
3.85
1.45
0.575
0.090
0.028
0.039
0.632
0.366
0.177
0.421
0.144
0.049
0.625
0.118
0.063
0.070
0.640
0.374
0.185
0.429
0.152
0.057
30-08-2007
01
Datasheet
13
Vꢀ2.1
2018-01-11
IKB20N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.1
2018-01-11
IKB20N65EH5
Highꢀspeedꢀswitchingꢀseriesꢀ5thꢀgeneration
RevisionꢀHistory
IKB20N65EH5
Revision:ꢀ2018-01-11,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2018-01-11 Final data sheet
Datasheet
15
Vꢀ2.1
2018-01-11
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