IKB10N60T [INFINEON]
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode; 低损耗DUOPACK ： IGBT的沟槽场终止和技术，软，恢复快反平行EMCON何二极管
| 型号： | IKB10N60T |
| 厂家： | 
Infineon |
| 描述： | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| 文件： | 总14页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKP10N60T
IKB10N60T
TrenchStop Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
•
•
•
•
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
G
E
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
•
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
- low VCE(sat)
•
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
•
•
•
•
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C
1.5V
Tj,max
175°C
175°C
Marking Code Package
Ordering Code
Q67040S4682
Q67040S4681
IKP10N60T
IKB10N60T
600V
600V
10A
10A
K10T60
K10T60
TO-220
TO-263
1.5V
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
VCE
IC
600
V
A
20
10
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C
Diode forward current, limited by Tjmax
TC = 25°C
ICpuls
30
30
-
IF
20
10
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
IFpuls
VGE
tSC
30
±20
5
V
Short circuit withstand time1)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
µs
Ptot
Tj
110
-40...+175
-55...+175
W
°C
Tstg
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
RthJC
RthJCD
RthJA
TO-220-3-1
TO-220-3-1
1.35
1.9
K/W
TO-220-3-1
TO-263-3-2 Footprint
TO-263-3-2 (6cm² Cu)
62
65
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)C ES VGE=0V, IC=0.2mA
600
-
-
V
Collector-emitter saturation voltage
VC E(sa t) VGE = 15V, IC=10A
Tj=25°C
-
-
1.5
1.8
2.05
-
Tj=175°C
Diode forward voltage
VF
VGE=0V, IF=10A
Tj=25°C
-
-
1.6
1.6
2.0
-
Tj=175°C
Gate-emitter threshold voltage
Zero gate voltage collector current
VGE(th )
IC ES
IC=0.3mA,VCE=VGE
4.1
4.6
5.7
VC E=600V,
µA
VGE=0V
Tj=25°C
Tj=175°C
-
-
-
-
-
-
-
6
40
1000
100
-
Gate-emitter leakage current
Transconductance
IGES
gfs
VC E=0V,VGE=20V
VC E=20V, IC=10A
nA
S
Integrated gate resistor
RGint
none
Ω
2
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
VC E=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=10A
VGE=15V
TO-220-3-1
TO-263-3-2
VGE=15V,tSC ≤5µs
VCC = 400V,
Tj = 25°C
-
-
-
-
551
40
17
-
-
-
-
pF
Coss
Crss
QGa te
62
nC
nH
A
Internal emitter inductance
LE
-
-
7
-
-
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC (SC)
100
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td (on)
tr
td (off)
tf
-
-
-
-
-
-
-
12
8
215
38
0.16
0.27
0.43
-
-
-
-
-
-
-
ns
Tj=25°C,
VCC=400V,IC=10A,
VGE=0/15V,
RG=23Ω,
Lσ 2)=60nH,
Cσ 2)=40pF
Eon
Eo ff
Ets
mJ
Energy losses include
“tail” and diode
reverse recovery.
trr
-
-
-
-
115
0.38
10
-
-
-
-
ns
µC
A
Tj=25°C,
VR=400V, IF=10A,
diF/dt=880A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr/dt
680
A/µs
recovery current during tb
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td (on)
tr
td (off)
tf
-
-
-
-
-
-
-
10
11
233
63
0.26
0.35
0.61
-
-
-
-
-
-
-
ns
Tj=175°C,
VCC=400V,IC=10A,
VGE=0/15V,
RG= 23Ω
Lσ 1)=60nH,
Cσ 1)=40pF
Eon
Eo ff
Ets
mJ
Energy losses include
“tail” and diode
reverse recovery.
trr
-
-
-
-
200
0.92
13
-
-
-
-
ns
µC
A
Tj=175°C
VR=400V, IF=10A,
diF/dt=880A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr/dt
390
A/µs
recovery current during tb
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
4
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
tp=1µs
30A
25A
20A
15A
10A
5A
5µs
10A
1A
TC=80°C
20µs
TC=110°C
100µs
500µs
Ic
10ms
DC
Ic
0A
10Hz
0,1A
1V
100Hz
1kHz
10kHz 100kHz
10V
100V
1000V
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 23Ω)
120W
100W
80W
60W
40W
20W
0W
30A
20A
10A
0A
25°C
75°C
125°C
25°C
50°C
75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 175°C)
(VGE ≥ 15V, Tj ≤ 175°C)
5
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
30A
25A
20A
15A
10A
5A
30A
25A
20A
15A
10A
5A
VGE=20V
VGE=20V
15V
15V
12V
10V
8V
12V
10V
8V
6V
6V
0A
0A
0V
1V
2V
3V
4V
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 25°C)
(Tj = 175°C)
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
25A
20A
15A
10A
IC=20A
IC=10A
IC=5A
TJ=175°C
5A
25°C
0A
-50°C
0°C
50°C
100°C
150°C
0V
2V
4V
6V
8V
10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE=20V)
saturation voltage as a function of
junction temperature
(VGE = 15V)
6
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
td(off)
td(off)
100ns
10ns
1ns
100ns
tf
tf
td(on)
td(on)
10ns
tr
tr
1ns
0A
5A
10A
15A
20A
10Ω
20Ω
30Ω
40Ω
50Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 10. Typical switching times as a
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 23ꢀ,
VCE= 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7V
6V
5V
4V
3V
2V
1V
0V
td(off)
max.
typ.
100ns
10ns
1ns
tf
min.
td(on)
tr
25°C
50°C
75°C 100°C 125°C 150°C
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.3mA)
V
GE = 0/15V, IC = 10A, RG=23ꢀ,
Dynamic test circuit in Figure E)
7
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
*) Eon and Ets include losses
*) Eon and Etsinclude losses
Ets*
due to diode recovery
Ets*
due to diode recovery
0,8 mJ
0,6 mJ
0,4 mJ
0,2 mJ
0,0 mJ
1,0mJ
0,8mJ
0,6mJ
0,4mJ
0,2mJ
0,0mJ
Eoff
Eoff
Eon*
Eon
*
10Ω
20Ω
30Ω
40Ω
50Ω
0A
5A
10A
15A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 23ꢀ,
Dynamic test circuit in Figure E)
VCE = 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
*) Eon and Ets include losses
due to diode recovery
0,6mJ
0,5mJ
0,4mJ
0,3mJ
0,2mJ
0,1mJ
0,0mJ
due to diode recovery
0,8mJ
Ets*
0,6mJ
Ets*
Eoff
0,4mJ
Eoff
0,2mJ
Eon
*
Eon
*
0,0mJ
50°C
100°C
150°C
300V 350V 400V 450V 500V 550V
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, VCE = 400V,
(inductive load, TJ = 175°C,
V
GE = 0/15V, IC = 10A, RG = 23ꢀ,
VGE = 0/15V, IC = 10A, RG = 23ꢀ,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
8
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
1nF
Ciss
15V
10V
5V
120V
480V
100pF
Coss
Crss
10pF
0V
0V
10V
20V
0nC
20nC
40nC
60nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
(IC=10 A)
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12µs
10µs
8µs
150A
125A
100A
75A
50A
25A
0A
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
12V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
(VCE ≤ 400V, Tj ≤ 150°C)
9
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
100K/W
10-1K/W
10-2K/W
D=0.5
D=0.5
100K/W
R , ( K / W )
0.2911
τ , ( s )
6.53*10-2
8.33*10-3
7.37*10-4
7.63*10-5
R2
0.2
0.1
0.2
0.1
R , ( K / W )
0.3169
τ , ( s )
4.629*10-2
7.07*10-3
1.068*10-3
1.253*10-4
R2
6
0.4092
0.4734
0.5008
0.6662
0.1529
R1
0.4398
0.05
0.02
0.01
R1
0.05
0.02
0.01
single pulse
10-1K/W
C1=τ1/R1 C2=τ2/R2
C1=τ1/R1 C2=τ2/R2
single pulse
10-2K/W
10µs
100µs
1ms
10ms 100ms
1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
tP, PULSE WIDTH
Figure 22. Diode transient thermal
(D = tp / T)
impedance as a function of pulse
width
(D=tP/T)
0,8µC
TJ=175°C
300ns
250ns
0,7µC
0,6µC
0,5µC
0,4µC
TJ=175°C
200ns
150ns
TJ=25°C
0,3µC
100ns
0,2µC
0,1µC
0,0µC
TJ=25°C
50ns
0ns
200A/µs
400A/µs
600A/µs
800A/µs
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=10A,
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
Dynamic test circuit in Figure E)
(VR = 400V, IF = 10A,
Dynamic test circuit in Figure E)
10
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
14A
12A
10A
8A
TJ=175°C
TJ=25°C
-700A/µs
-600A/µs
-500A/µs
-400A/µs
-300A/µs
-200A/µs
-100A/µs
0A/µs
TJ=25°C
TJ=175°C
6A
4A
2A
0A
400A/µs
600A/µs
800A/µs
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=10A,
(VR = 400V, IF = 10A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
30A
2,0V
TJ=25°C
175°C
IF=20A
10A
5A
1,5V
1,0V
0,5V
0,0V
20A
10A
0A
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
VF, FORWARD VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
11
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
Dimensions
[mm]
TO-220AB
symbol
[inch]
min
9.70
14.88
0.65
3.55
2.60
6.00
13.00
4.35
0.38
0.95
max
10.30
15.95
0.86
3.89
3.00
6.80
14.00
4.75
0.65
1.32
min
max
A
B
C
D
E
F
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.4055
0.6280
0.0339
0.1531
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
G
H
K
L
M
N
P
T
2.54 typ.
0.1 typ.
4.30
4.50
1.40
2.72
0.1693
0.0461
0.0906
0.1772
0.0551
0.1071
1.17
2.30
TO-263AB (D2Pak)
dimensions
symbol
[mm]
[inch]
min
9.80
0.70
1.00
1.03
max
10.20
1.30
1.60
1.07
min
max
A
B
C
D
E
F
0.3858
0.0276
0.0394
0.0406
0.4016
0.0512
0.0630
0.0421
2.54 typ.
0.65 0.85
5.08 typ.
0.1 typ.
0.0256
0.0335
G
H
K
L
0.2 typ.
4.30
4.50
1.37
9.45
2.50
0.1693
0.0461
0.3563
0.0906
0.1772
0.0539
0.3720
0.0984
1.17
9.05
2.30
M
N
P
Q
R
S
T
15 typ.
0.5906 typ.
0.00
4.20
0.20
5.20
0.0000
0.1654
0.0079
0.2047
8° max
8° max
2.40
0.40
3.00
0.60
0.0945
0.0157
0.1181
0.0236
U
V
W
X
Y
Z
10.80
1.15
6.23
4.60
9.40
16.15
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
12
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
90% Ir r m
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r 2
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
and Stray capacity Cσ =40pF.
Figure B. Definition of switching losses
13
Rev. 2 Oct-04
Power Semiconductors
IKP10N60T
IKB10N60T
TrenchStop Series
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
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descriptions and charts stated herein.
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approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
14
Rev. 2 Oct-04
Power Semiconductors
相关型号：
IKB10N60TATMA1
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IKB15N60T
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
INFINEON
IKB15N60TATMA1
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IKB20N60H3
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IKB20N60T
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
INFINEON
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