IDP04E120_09 [INFINEON]
Fast Switching Diode; 快速开关二极管
| 型号： | IDP04E120_09 |
| 厂家： | 
Infineon |
| 描述： | Fast Switching Diode |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDP04E120
Fast Switching Diode
Product Summary
Features
V
1200
4
V
A
RRM
• 1200 V diode technology
• Fast recovery
I
F
V
T
1.65
150
V
F
• Soft switching
°C
jmax
• Low reverse recovery charge
• Low forward voltage
PG-TO220-2
• Easy paralleling
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to JEDEC for target applications
Type
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
-
C
A
-
IDP04E120
PG-TO220-2
D04E120
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Repetitive peak reverse voltage
Continous forward current
Symbol
Value
1200
Unit
V
V
RRM
I
A
F
T =25°C
11.2
7.1
C
T =90°C
C
Surge non repetitive forward current
I
I
28
FSM
FRM
T =25°C, t =10 ms, sine halfwave
C
p
Maximum repetitive forward current
16.5
T =25°C, t limited by T
, D=0.5
C
p
jmax
W
Power dissipation
P
tot
T =25°C
43.1
20.6
C
T =90°C
C
-55...+150
260
°C
°C
Operating and storage temperature
Soldering temperature
wavesoldering, 1.6mm (0.063 in.) from case for 10s
T , T
j stg
T
S
Page 1
Rev.2.3
2009-08-19
IDP04E120
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
-
-
-
-
2.9
62
K/W
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
R
R
R
thJC
thJA
thJA
-
-
-
35
62
-
2
@ 6 cm cooling area 1)
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
μA
V
min.
Static Characteristics
Reverse leakage current
I
R
V =1200V, T =25°C
-
-
-
-
100
350
R
j
V =1200V, T =150°C
R
j
Forward voltage drop
V
F
I =4A, T =25°C
-
-
1.65
1.7
2.15
-
F
j
I =4A, T =150°C
F
j
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
Rev.2.3
2009-08-19
IDP04E120
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
ns
A
Reverse recovery time
t
I
rr
V =800V, I =4A, di /dt=750A/μs, T =25°C
-
-
-
115
180
185
-
-
-
R
F
F
j
V =800V, I =4A, di /dt=750A/μs, T =125°C
R
F
F
j
V =800V, I =4A, di /dt=750A/μs, T =150°C
R
F
F
j
Peak reverse current
rrm
V =800V, I = 4 A, di /dt=750A/μs, T =25°C
-
-
-
7.15
8
8.1
-
-
-
R
F
F
j
V =800V, I =4A, di /dt=750A/μs, T =125°C
R
F
F
j
V =800V, I =4A, di /dt=750A/μs, T =150°C
R
F
F
j
nC
Reverse recovery charge
Q
S
rr
V =800V, I =4A, di /dt=750A/μs, T =25°C
-
-
-
330
575
630
-
-
-
R
F
F
j
V =800V, I =4A, di /dt=750A/μs, T =125°C
R
F
F
j
V =800V, I =4A, di /dt=750A/μs, T =150°C
R
F
F
j
Reverse recovery softness factor
V =800V, I =4A, di /dt=750A/μs, T =25°C
-
-
-
6
7.8
7.8
-
-
-
R
F
F
j
V =800V, I =4A, di /dt=750A/μs, T =125°C
R
F
F
j
V =800V, I =4A, di /dt=750A/μs, T =150°C
R
F
F
j
Page 3
Rev.2.3
2009-08-19
IDP04E120
1 Power dissipation
= f (T )
2 Diode forward current
I = f(T )
P
tot
C
F
C
parameter: T ≤ 150°C
parameter: T ≤ 150°C
j
j
45
12
A
W
10
9
8
7
6
5
4
3
2
1
0
35
30
25
20
15
10
5
0
25
50
75
100
150
25
50
75
100
150
°C
°C
T
T
C
C
3 Typ. diode forward current
I = f (V )
4 Typ. diode forward voltage
V = f (T )
F
F
F
j
2.4
12
A
8A
V
-55°C
25°C
10
9
8
7
6
5
4
3
2
1
0
100°C
150°C
2
1.8
1.6
1.4
1.2
1
4A
2A
0
0.5
1
1.5
2
3
-60
-20
20
60
100
160
V
°C
T
V
F
j
Page 4
Rev.2.3
2009-08-19
IDP04E120
5 Typ. reverse recovery time
t = f (di /dt)
6 Typ. reverse recovery charge
Q =f(di /dt)
rr
F
rr
F
parameter: V = 800V, T = 125°C
parameter: V = 800V, T = 125 °C
R j
R
j
500
900
ns
nC
8A
400
350
300
250
200
150
100
50
800
750
700
650
600
550
500
450
400
8A
4A
2A
4A
2A
0
200 300 400 500 600 700 800
1000
200 300 400 500 600 700 800
1000
A/μs
di /dt
A/μs
di /dt
F
F
7 Typ. reverse recovery current
8 Typ. reverse recovery softness factor
S = f(di /dt)
I = f (di /dt)
rr
F
F
parameter: V = 800V, T = 125°C
parameter: V = 800V, T = 125°C
R j
R
j
20
12
A
8A
4A
2A
16
14
12
10
8
8A
4A
2A
10
9
8
7
6
6
4
5
2
4
0
200 300 400 500 600 700 800
1000
200 300 400 500 600 700 800
1000
A/μs
di /dt
A/μs
di /dt
F
F
Page 5
Rev.2.3
2009-08-19
IDP04E120
9 Max. transient thermal impedance
= f (t )
Z
thJC
p
parameter : D = t /T
p
10 1
IDP04E120
K/W
10 0
10 -1
D = 0.50
0.20
10 -2
0.10
single pulse
0.05
0.02
10 -3
0.01
10 -4
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
t
p
Page 6
Rev.2.3
2009-08-19
IDP04E120
TO-220-2
Page 7
Rev.2.3
2009-08-19
IDP04E120
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in
life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety
or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human
body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Page 8
Rev.2.3
2009-08-19
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