IDP08E65D1 [INFINEON]
Rapid 1 650 V 开关, 8 A 发射极控制 硅功率二极管 具有 TO-220 real2pin 封装,十分适合PFC拓扑，通常应用于家用空调，洗碗机等大型家电中。;
| 型号： | IDP08E65D1 |
| 厂家： | 
Infineon |
| 描述： | Rapid 1 650 V 开关, 8 A 发射极控制 硅功率二极管 具有 TO-220 real2pin 封装,十分适合PFC拓扑，通常应用于家用空调，洗碗机等大型家电中。 开关 空调 功率因数校正 二极管 |
| 文件： | 总11页 (文件大小：1782K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Diode
RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode
IDP08E65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀSeries
Dataꢀsheet
IndustrialꢀPowerꢀControl
IDP08E65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀSeries
RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode
ꢀ
Features:
A
•ꢀ650ꢀVꢀEmitterꢀControlledꢀtechnology
•ꢀTemperatureꢀstableꢀbehaviourꢀofꢀkeyꢀparameters
•ꢀLowꢀforwardꢀvoltageꢀ(VF)
•ꢀUltraꢀfastꢀrecovery
•ꢀLowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀLowꢀreverseꢀrecoveryꢀcurrentꢀ(Irrm
)
•ꢀSoftnessꢀfactorꢀ>1
•ꢀ175ꢀ°Cꢀjunctionꢀoperatingꢀtemperature
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
C
Applications:
•ꢀAC/DCꢀconverters
•ꢀBoostꢀdiodeꢀinꢀPFCꢀstages
•ꢀFreeꢀwheelingꢀdiodesꢀinꢀinvertersꢀandꢀmotorꢀdrives
•ꢀGeneralꢀpurposeꢀinverters
•ꢀSwitchꢀmodeꢀpowerꢀsupplies
C
A
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
Vrrm
If
Vf,ꢀTvj=25°C
Tvjmax
Marking
Package
IDP08E65D1
650V
8A
1.35V
175°C
E08ED1
PG-TO220-2-1
2
Rev.ꢀ2.2,ꢀꢀ2013-12-16
IDP08E65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀSeries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
Rev.ꢀ2.2,ꢀꢀ2013-12-16
IDP08E65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀSeries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
650
V
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
16.0
8.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
IFSM
24.0
A
A
Diode surge non repetitive forward current
TCꢀ=ꢀ25°C,ꢀtpꢀ=ꢀ10.0ms,ꢀsineꢀhalfwave
64.0
56.0
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
Ptot
Tvj
W
°C
°C
-40...+175
-55...+150
Tstg
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
Diode thermal resistance,1)
junction - case
Rth(j-c)
Rth(j-a)
2.69
62
K/W
K/W
Thermal resistance
junction - ambient
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
IFꢀ=ꢀ8.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.35 1.70
Diode forward voltage
VF
V
1.30
1.26
-
-
VRꢀ=ꢀ650V
Reverse leakage current
IR
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
-
-
-
-
40.0 µA
2000.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
-
7.0
-
nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
4
Rev.ꢀ2.2,ꢀꢀ2013-12-16
IDP08E65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀSeries
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
51
0.20
7.9
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ8.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-420
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
80
0.17
2.8
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ8.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ200A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-310
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C/125°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
81
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ8.0A,
Qrr
0.49
10.5
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-300
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
110
0.32
4.7
-
-
-
ns
µC
A
Tvjꢀ=ꢀ125°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ8.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ200A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-210
-
A/µs
5
Rev.ꢀ2.2,ꢀꢀ2013-12-16
IDP08E65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀSeries
60
50
40
30
20
10
0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Diodeꢀforwardꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(Tvj≤175°C)
10
150
Tj=25°C, IF = 8A
Tj=125°C, IF = 8A
Tj=175°C, IF = 8A
135
120
105
90
75
60
45
30
15
0
1
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
i:
1
2
3
4
5
6
ri[K/W]: 0.054405 0.4186 1.3026 0.83954 0.07293
2.1E-3
τi[s]:
1.3E-5
1.3E-4 6.5E-4 4.7E-3
0.05512947 2.016515
0.01
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
200
600 1000 1400 1800 2200 2600 3000
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 3. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
Figure 4. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunctionꢀof
diodeꢀcurrentꢀslope
(D=tp/T)
(VR=400V)
6
Rev.ꢀ2.2,ꢀꢀ2013-12-16
IDP08E65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀSeries
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
20
18
16
14
12
10
8
Tj=25°C, IF = 8A
Tj=125°C, IF = 8A
Tj=175°C, IF = 8A
Tj=25°C, IF = 8A
Tj=125°C, IF = 8A
Tj=175°C, IF = 8A
6
4
2
0
200
600 1000 1400 1800 2200 2600 3000
200
600 1000 1400 1800 2200 2600 3000
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 5. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀaꢀfunction Figure 6. Typicalꢀpeakꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
0
-200
16
14
12
10
8
Tj=25°C, IF = 8A
Tj=125°C, IF = 8A
Tj=175°C, IF = 8A
Tj=25°C
Tj=175°C
-400
-600
-800
-1000
-1200
-1400
-1600
-1800
-2000
6
4
2
0
200
600 1000 1400 1800 2200 2600 3000
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 7. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 8. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunctionꢀof
forwardꢀvoltage
(VR=400V)
7
Rev.ꢀ2.2,ꢀꢀ2013-12-16
IDP08E65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀSeries
2.00
1.75
1.50
1.25
1.00
0.75
0.50
IF=2A
IF=4A
IF=8A
IF=12A
IF=16A
0
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
8
Rev.ꢀ2.2,ꢀꢀ2013-12-16
IDP08E65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀSeries
PG-TO220-2-1
9
Rev.ꢀ2.2,ꢀꢀ2013-12-16
IDP08E65D1
EmitterꢀControlledꢀDiodeꢀRapidꢀ1ꢀSeries
vGE(t)
90% VGE
a
b
a
b
10% VGE
t
iC(t)
90% IC
10% IC
90% IC
10% IC
t
vCE(t)
t
t
td(off)
tf
td(on)
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
t4
E
=
VCE x IC x dt
E
=
on
VCE x IC x dt
off
∫
∫
2% VCE
t1
t3
t
t1
t2
t3
t4
10
Rev.ꢀ2.2,ꢀꢀ2013-12-16
IDP08E65D1
Emitter Controlled Diode Rapid 1 Series
Revision History
IDP08E65D1
Revision: 2013-12-16, Rev. 2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2013-03-13 Preliminary data sheet
2013-10-21 Final data sheet
2013-12-16 New Marking Pattern
1.1
2.1
2.2
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
11
Rev. 2.2, 2013-12-16
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