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IDP09E120_09 [INFINEON]

Fast Switching Diode; 快速开关二极管
IDP09E120_09
型号： IDP09E120_09
厂家： Infineon    Infineon
描述：

Fast Switching Diode
快速开关二极管

二极管 开关
文件： 总8页 (文件大小：434K)
中文：  中文翻译
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IDP09E120  
Fast Switching Diode  
Product Summary  
Features  
V
1200  
9
V
A
V
RRM  
• 1200 V diode technology  
I
F
• Fast recovery  
V
T
1.65  
150  
F
• Soft switching  
°C  
jmax  
• Low reverse recovery charge  
• Low forward voltage  
PG-TO220-2  
• Easy paralleling  
• Pb-free lead plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
• Qualified according to JEDEC for target applications  
Type  
Package  
Ordering Code Marking Pin 1 PIN 2 PIN 3  
-
C
A
-
IDP09E120  
PG-TO220-2  
D09E120  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Repetitive peak reverse voltage  
Continous forward current  
Symbol  
Value  
1200  
Unit  
V
A
V
RRM  
I
F
T =25°C  
23  
C
T =90°C  
14.4  
C
Surge non repetitive forward current  
I
I
50  
FSM  
FRM  
T =25°C, t =10 ms, sine halfwave  
C
p
Maximum repetitive forward current  
36  
T =25°C, t limited by T  
, D=0.5  
C
p
jmax  
W
Power dissipation  
P
tot  
T =25°C  
69  
33  
C
T =90°C  
C
-55...+150  
260  
°C  
°C  
Operating and storage temperature  
T , T  
j stg  
S
Soldering temperature  
T
wavesoldering, 1.6mm (0.063 in.) from case for 10s  
Page 1  
Rev.2.3  
2009-08-19  
IDP09E120  
Thermal Characteristics  
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
Characteristics  
-
-
-
-
1.8  
62  
K/W  
Thermal resistance, junction - case  
Thermal resistance, junction - ambient, leaded  
SMD version, device on PCB:  
@ min. footprint  
R
R
R
thJC  
thJA  
thJA  
-
-
-
35  
62  
-
2
1)  
@ 6 cm cooling area  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ. max.  
Unit  
µA  
V
min.  
Static Characteristics  
Reverse leakage current  
V =1200V, T =25°C  
I
R
-
-
-
-
100  
700  
R
j
V =1200V, T =150°C  
R
j
Forward voltage drop  
V
F
I =9A, T =25°C  
-
-
1.65  
1.7  
2.15  
-
F
j
I =9A, T =150°C  
F
j
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical without blown air.  
Page 2  
Rev.2.3  
2009-08-19  
IDP09E120  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
Dynamic Characteristics  
Reverse recovery time  
ns  
A
t
I
rr  
V =800V, I =9A, di /dt=750A/µs, T =25°C  
-
-
-
140  
200  
210  
-
-
-
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =125°C  
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =150°C  
R
F
F
j
Peak reverse current  
rrm  
V =800V, I = 9 A, di /dt=750A/µs, T =25°C  
-
-
-
13.3  
16.1  
16.5  
-
-
-
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =125°C  
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =150°C  
R
F
F
j
nC  
Reverse recovery charge  
Q
S
rr  
V =800V, I =9A, di /dt=750A/µs, T =25°C  
-
-
-
950  
1470  
1600  
-
-
-
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =125°C  
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =150°C  
R
F
F
j
Reverse recovery softness factor  
V =800V, I =9A, di /dt=750A/µs, T =25°C  
-
-
-
5.4  
6.5  
6.6  
-
-
-
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =125°C  
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =150°C  
R
F
F
j
Page 3  
Rev.2.3  
2009-08-19  
IDP09E120  
1 Power dissipation  
= f (T )  
2 Diode forward current  
I = f(T )  
P
tot  
C
F
C
parameter: T ≤ 150 °C  
parameter: T ≤ 150°C  
j
j
25  
70  
W
A
50  
40  
30  
20  
10  
0
15  
10  
5
0
25  
50  
75  
100  
150  
25  
50  
75  
100  
150  
°C  
°C  
T
T
C
C
3 Typ. diode forward current  
I = f (V )  
4 Typ. diode forward voltage  
V = f (T )  
F
F
F
j
27  
2.6  
A
V
-55°C  
25°C  
18A  
21  
18  
15  
12  
9
100°C  
150°C  
2.2  
2
9A  
1.8  
1.6  
1.4  
1.2  
4,5A  
6
3
0
0
0.5  
1
1.5  
2
3
-60  
-20  
20  
60  
100  
160  
V
°C  
V
T
F
j
Page 4  
Rev.2.3  
2009-08-19  
IDP09E120  
5 Typ. reverse recovery time  
t = f (di /dt)  
6 Typ. reverse recovery charge  
Q =f(di /dt)  
rr  
F
rr  
F
parameter: V = 800V, T = 125°C  
parameter: V = 800V, T = 125 °C  
R
j
R j  
690  
2000  
ns  
nC  
18A  
590  
540  
490  
440  
390  
340  
290  
240  
190  
140  
90  
1800  
1700  
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
18A  
9A  
4,5A  
9A  
4,5A  
200 300 400 500 600 700 800  
1000  
200 300 400 500 600 700 800  
1000  
A/µs  
di /dt  
A/µs  
di /dt  
F
F
7 Typ. reverse recovery current  
8 Typ. reverse recovery softness factor  
S = f(di /dt)  
I = f (di /dt)  
rr  
F
F
parameter: V = 800V, T = 125°C  
parameter: V = 800V, T = 125°C  
R
j
R j  
21  
18  
A
18A  
9A  
17  
15  
13  
11  
9
14  
12  
10  
8
4,5A  
18A  
9A  
4,5A  
6
7
4
5
2
200 300 400 500 600 700 800  
1000  
200 300 400 500 600 700 800  
1000  
A/µs  
di /dt  
A/µs  
di /dt  
F
F
Page 5  
Rev.2.3  
2009-08-19  
IDP09E120  
9 Max. transient thermal impedance  
= f (t )  
Z
thJC  
p
parameter : D = t /T  
p
10 1  
IDP09E120  
K/W  
10 0  
10 -1  
10 -2  
D = 0.50  
0.20  
0.10  
0.05  
0.02  
10 -3  
0.01  
single pulse  
10 -4  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
s
t
p
Page 6  
Rev.2.3  
2009-08-19  
IDP09E120  
TO-220-2  
Page 7  
Rev.2.3  
2009-08-19  
IDP09E120  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
81726 München, Germany  
© 2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding  
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon  
Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in  
question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in  
life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety  
or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human  
body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the  
health of the user or other persons may be endangered.  
Page 8  
Rev.2.3  
2009-08-19  

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