IDP06E60_09 [INFINEON]
Fast Switching Diode; 快速开关二极管
| 型号： | IDP06E60_09 |
| 厂家： | 
Infineon |
| 描述： | Fast Switching Diode |
| 文件： | 总8页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDP06E60
Fast Switching Diode
Product Summary
Features
V
600
6
V
A
RRM
• 600 V diode technology
I
F
• Fast recovery
V
T
1.5
175
V
F
• Soft switching
°C
jmax
• Low reverse recovery charge
• Low forward voltage
PG-TO220-2
• Easy paralleling
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to JEDEC for target applications
Type
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
-
C
A
-
IDP06E60
PG-TO220-2
D06E60
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Repetitive peak reverse voltage
Continous forward current
Symbol
Value
600
Unit
V
V
RRM
I
A
F
T =25°C
14.7
10
C
T =90°C
C
Surge non repetitive forward current
I
I
29
FSM
FRM
T =25°C, t =10 ms, sine halfwave
C
p
Maximum repetitive forward current
22
T =25°C, t limited by T
, D=0.5
C
p
jmax
W
Power dissipation
P
tot
T =25°C
46.9
26.6
C
T =90°C
C
-55...+175
°C
°C
Operating and storage temperature
Soldering temperature
wavesoldering, 1.6mm (0.063 in.) from case for 10s
T , T
j stg
T
260
S
4
Page 1
Rev.2.
2009-09-28
IDP06E60
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
-
-
-
-
3.2
62
K/W
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
R
R
R
thJC
thJA
thJA
-
-
-
35
62
-
2
@ 6 cm cooling area 1)
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
μA
V
min.
Static Characteristics
Reverse leakage current
I
R
V =600V, T =25°C
-
-
-
-
50
500
R
j
V =600V, T =150°C
R
j
Forward voltage drop
V
F
I =6A, T =25°C
-
-
1.5
1.5
2
-
F
j
I =6A, T =150°C
F
j
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Page 2
Rev.2.
2009-09-28
IDP06E60
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
Reverse recovery time
ns
A
t
I
rr
V =400V, I =6A, di/dt=550A/μs, T =25°C
-
-
-
70
100
105
-
-
-
R
F
j
V =400V, I =6A, di/dt=550A/μs , T =125°C
R
F
j
V =400V, I =6A, di/dt=550A/μs , T =150°C
R
F
j
Peak reverse current
rrm
V =400V, I =6A, di/dt=550A/μs, T =25°C
-
-
-
6.5
7.4
7.9
-
-
-
R
F
j
V =400V, I =6A, di/dt=550A/μs, T =125°C
R
F
j
V =400V, I =6A, di/dt=550A/μs, T =150°C
R
F
j
nC
Reverse recovery charge
Q
S
rr
V =400V, I =6A, di/dt=550A/μs, T =25°C
-
-
-
240
360
400
-
-
-
R
F
j
V =400V, I =6A, di/dt=550A/μs, T =125°C
R
F
j
V =400V, I =6A, di/dt=550A/μs, T =150°C
R
F
j
Reverse recovery softness factor
V =400V, I =6A, di /dt=550A/μs, T =25°C
-
-
-
4
4.8
4.9
-
-
-
R
F
F
j
V =400V, I =6A, di /dt=550A/μs, T =125°C
R
F
F
j
V =400V, I =6A, di /dt=550A/μs, T =150°C
R
F
F
j
4
Page 3
Rev.2.
2009-09-28
IDP06E60
1 Power dissipation
= f (T )
2 Diode forward current
I = f(T )
P
tot
C
F
C
parameter: T ≤ 175 °C
parameter: T ≤ 175°C
j
j
50
16
W
A
40
35
30
25
20
15
10
5
12
10
8
6
4
2
0
0
25
50
75
100
125
175
25
50
75
100
125
175
°C
°C
T
T
C
C
3 Typ. diode forward current
4 Typ. diode forward voltage
I = f (V )
V = f (T )
F
F
F
j
2
18
V
A
12A
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
14
12
10
8
-55°C
25°C
100°C
150°C
6A
3A
6
4
2
0
0
0.5
1
1.5
2.5
-60
-20
20
60
100
160
V
°C
T
V
F
j
4
Page 4
Rev.2.
2009-09-28
IDP06E60
5 Typ. reverse recovery time
t = f (di /dt)
6 Typ. reverse recovery charge
Q =f(di /dt)
rr
F
rr
F
parameter: V = 400V, T = 125°C
parameter: V = 400V, T = 125 °C
R
j
R
j
300
550
nC
12A
ns
500
475
450
425
400
375
350
325
300
275
250
12A
6A
3A
200
150
100
50
6A
3A
0
200
300
400
500
600
800
200
300
400
500
600
800
A/μs
A/μs
di /dt
di /dt
F
F
7 Typ. reverse recovery current
I = f (di /dt)
8 Typ. reverse recovery softness factor
S = f(di /dt)
rr
F
F
parameter: V = 400V, T = 125°C
parameter: V = 400V, T = 125°C
R j
R
j
11
11
A
9
8
7
6
5
4
3
2
1
0
12A
6A
12A
6A
9
8
7
6
5
4
3A
3A
3
200
300
400
500
600
800
200 300 400 500 600 700 800
1000
A/μs
A/μs
di /dt
di /dt
F
F
4
Page 5
Rev.2.
2009-09-28
IDP06E60
9 Max. transient thermal impedance
= f (t )
Z
thJC
p
parameter : D = t /T
p
10 1
IDP06E60
K/W
10 0
10 -1
D = 0.50
0.20
10 -2
0.10
0.05
single pulse
10 -3
0.02
0.01
10 -4
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
t
p
4
Page 6
Rev.2.
2009-09-28
IDP06E60
Package outline: TO220-2-1
4
Page 7
Rev.2.
2009-09-28
IDP06E60
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in
life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety
or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human
body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
4
Page 8
Rev.2.
2009-09-28
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