HFA08TB60PBF [INFINEON]
Ultrafast, Soft Recovery Diode; 超快，软恢复二极管
| 型号： | HFA08TB60PBF |
| 厂家： | 
Infineon |
| 描述： | Ultrafast, Soft Recovery Diode |
| 文件： | 总6页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95737
HFA08TB60PbF
Ultrafast, Soft Recovery Diode
HEXFREDTM
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Specified at Operating Conditions
Lead-Free
BASE
CATHODE
VR = 600V
VF(typ.)* = 1.4V
IF(AV) = 8.0A
4
Qrr (typ.)= 65nC
IRRM = 5.0A
2
trr(typ.) = 18ns
3
1
Benefits
ANODE
2
CATHODE
di(rec)M/dt (typ.) = 240A/µs
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA08TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps continuous current, the HFA08TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
TO-220AC
Absolute Maximum Ratings
Parameter
Max
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
600
8.0
60
V
IF @ TC = 100°C
IFSM
A
IFRM
24
PD @ TC = 25°C
36
W
C
PD @ TC = 100°C
14
TJ
- 55 to +150
TSTG
Storage Temperature Range
* 125°C
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HFA08TB60PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
600
V
IR = 100µA
1.4 1.7
1.7 2.1
1.4 1.7
0.3 5.0
100 500
IF = 8.0A
See Fig. 1
See Fig. 2
Max Forward Voltage
V
IF = 16A
IF = 8.0A, TJ = 125°C
VR = VR Rated
IRM
CT
Max Reverse Leakage Current
Junction Capacitance
Series Inductance
µA
pF
nH
TJ = 125°C, VR = 0.8 x VR RatedD Rated
VR = 200V See Fig. 3
10
25
Measured lead to lead 5mm from
package body
LS
8.0
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
trr
Reverse Recovery Time
18
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1
37
55
55
90
ns TJ = 25°C
TJ = 125°C
See Fig. 5, 6 & 16
trr2
IF = 8.0A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
See Fig. 7& 8
3.5 5.0
4.5 8.0
65 138
124 360
240
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
A
Reverse Recovery Charge
See Fig. 9 & 10
nC
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
210
See Fig. 11 & 12
Thermal - Mechanical Characteristics
Parameter
Min
Typ
Max
Units
T
Lead Temperature
300
3.5
80
°C
lead
R
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
JC
th
th
th
K/W
JA
0.5
2.0
CS
g
Weight
Wt
0.07
(oz)
6.0
5.0
12
10
Kg-cm
lbfin
Mounting Torque
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
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HFA08TB60PbF
1000
100
10
100
10
1
T = 150°C
J
T = 125°C
J
1
0.1
T = 25°C
J
0.01
0.001
T = 150°C
J
T = 125°C
J
0
100
200
300
400
500
600
T = 25°C
J
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
100
T = 25°C
J
10
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
(V)
FM
1
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
0.01
0.1
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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HFA08TB60PbF
80
20
15
10
5
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 16A
F
F
F
I
I
= 8.0A
= 4.0A
60
40
20
I
= 16A
= 8.0A
= 4.0A
F
I
F
I
F
VR = 200V
TJ = 125°C
TJ = 25°C
0
0
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt
10000
500
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
I
I
I
= 16A
= 8.0A
= 4.0A
F
F
I
I
I
= 16A
= 8.0A
= 4.0A
F
F
F
300
200
100
0
F
1000
100
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
4
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HFA08TB60PbF
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
RRM
I
RRM
5
di(rec)M/dt
Ω
0.01
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
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HFA08TB60PbF
TO-220AC Package Outline
Dimensions are shown in millimeters (inches)
TO-220AC Part Marking Information
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: T HI S I S A H F A06T B 120
LOT CODE 1789
ASSEMBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "C"
P = LEAD-FREE
YEAR 1 = 2001
WE E K 19
AS S E MB LY
LOT CODE
LINE C
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: THIS IS A HFA06TB120
LOT CODE 1789
ASSEMBLED ON WW 19, 2001
IN THE ASSEMBLYLINE "C"
YEAR 1 = 2001
WE E K 19
AS S E MB L Y
LOT CODE
P = LEAD-FREE
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
6
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