FP10R06W1E3 [INFINEON]

EasyPIM module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC; EasyPIM模块海沟/ Fieldstopp IGBT3和发射极控制二极管3和NTC
FP10R06W1E3
型号: FP10R06W1E3
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

EasyPIM module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
EasyPIM模块海沟/ Fieldstopp IGBT3和发射极控制二极管3和NTC

晶体 二极管 晶体管 双极性晶体管 局域网
文件: 总12页 (文件大小:649K)
下载:  下载PDF数据表文档文件

FP10R06W1E3_B11

EasyPIM module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

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19 INFINEON

FP10R06W1E3BOMA1

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23

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1 INFINEON

FP10R06YE3

IGBT-modules

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17 EUPEC

FP10R06YE3_B4

IGBT-modules

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27 EUPEC

FP10R12KE3

Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

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2 INFINEON

FP10R12NT3

Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, ECONOPIM-23

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6 INFINEON

FP10R12W1T3

IGBT-modules

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54 EUPEC

FP10R12W1T4

EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

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359 INFINEON

FP10R12W1T4_B11

IGBT-Wechselrichter / IGBT-inverter

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80 INFINEON

FP10R12W1T4_B3

EasyPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

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113 INFINEON

FP10R12W1T4B11BOMA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-22

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0 INFINEON

FP10R12W1T4B3BOMA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-21

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1 INFINEON

FP10R12W1T4BOMA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

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0 INFINEON

FP10R12W1T4P

Insulated Gate Bipolar Transistor,

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1 INFINEON

FP10R12W1T4PB11BPSA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

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1 INFINEON