FP10R12W1T4 [INFINEON]

EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC; EasyPIM ™ MODUL MIT海沟/ Feldstopp IGBT4 UND发射极控制二极管4 UND NTC
FP10R12W1T4
型号: FP10R12W1T4
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
EasyPIM ™ MODUL MIT海沟/ Feldstopp IGBT4 UND发射极控制二极管4 UND NTC

晶体 二极管 晶体管 功率控制 双极性晶体管 栅 局域网
文件: 总12页 (文件大小:503K)
下载:  下载PDF数据表文档文件

FP10R12W1T4_B11

IGBT-Wechselrichter / IGBT-inverter

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80 INFINEON

FP10R12W1T4_B3

EasyPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

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113 INFINEON

FP10R12W1T4B11BOMA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-22

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0 INFINEON

FP10R12W1T4B3BOMA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-21

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1 INFINEON

FP10R12W1T4BOMA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

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0 INFINEON

FP10R12W1T4P

Insulated Gate Bipolar Transistor,

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1 INFINEON

FP10R12W1T4PB11BPSA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

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1 INFINEON

FP10R12W1T4PBPSA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

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0 INFINEON

FP10R12YT3

IGBT-modules

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269 EUPEC

FP10R12YT3_B4

IGBT-modules

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45 EUPEC

FP10W90

HVX SERIES POWER MOSFET, 900V 10A

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8 ETC

FP10W90

HVX SERIES POWER MOSFET, 900V 10A

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187 ETC

FP10W90HVX2

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) | TO-247

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65 ETC

FP11

Sealed Ultra Miniature Pushbutton Switches

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34 CK-COMPONENTS

FP1100A

SILICON SURGE SUPPRESSOR DIODES

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33 ETC