FP10R12W1T4B3BOMA1 [INFINEON]
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-21;
| 型号： | FP10R12W1T4B3BOMA1 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-21 局域网 栅 功率控制 晶体管 |
| 文件： | 总10页 (文件大小：864K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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