FP10R12W1T7P_B11_技术文档

FP10R12W1T7P_B11

™

EasyPIM module

Preliminary datasheet

™

EasyPIM module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC / TIM

Features

• Electrical features

- V_CES= 1200 V

- I_{C nom}= 10 A / I_CRM= 20 A

- TRENCHSTOP^TMIGBT7

- Overload operation up to 175°C

- Low V_CEsat

• Mechanical features

- Pre-applied Thermal Interface Material

- High power density

- PressFIT contact technology

- Compact design

- Al₂O₃substrate with low thermal resistance

- 2.5 kV AC 1 min insulation

Potential applications

• Air conditioning

• Auxiliary inverters

• Motor drives

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

0.10

2021-03-19

FP10R12W1T7P_B11

™

EasyPIM module

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

1

2

3

4

5

6

7

8

9

10

11

Datasheet

2

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FP10R12W1T7P_B11

™

EasyPIM module

1 Package

1

Package

Table 1

Insulation coordination

Symbol Note or test condition

Parameter

Values

2.5

Unit

Isolation test voltage

Internal Isolation

Creepage distance

Clearance

V_ISOL

RMS, f = 50 Hz, t = 1 min

kV

basic insulation (class 1, IEC 61140)

Al₂O₃

11.5

6.3

d_Creepterminal to heatsink

mm

d_Creepterminal to terminal

d_Clearterminal to heatsink

d_Clearterminal to terminal

CTI

10.0

5.0

Clearance

Comparative tracking index

RTI Elec.

> 200

140

RTI

housing

°C

Table 2

Characteristic values

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Stray inductance module

L_sCE

30

6

nH

Module lead resistance,

terminals - chip

R_AA'+CC'T_H=25°C, per switch

mΩ

Module lead resistance,

terminals - chip

R_CC'+EE'T_H=25°C, per switch

8

mΩ

Storage temperature

T_stg

-40

20

125

°C

Maximum baseplate

operation temperature

T_BPmax

Mounting force per clamp

Weight

F

50

N

g

G

24

Note:

The current under continuous operation is limited to 25A rms per connector pin.

Storage and shipment of modules with TIM => see AN 2012-07

2

IGBT, Inverter

Table 3

Maximum rated values

Parameter

Symbol Note or test condition

Values

1200

10

Unit

Collector-emitter voltage

V_CES

I_CDC

T_vj= 25 °C

V

A

Continous DC collector

current

T_{vj max}= 175 °C

t_P= 1 ms

T_H= 100 °C

Repetitive peak collector

current

I_CRM

20

A

Datasheet

3

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2021-03-19

FP10R12W1T7P_B11

™

EasyPIM module

2 IGBT, Inverter

Table 3

Maximum rated values (continued)

Parameter

Symbol Note or test condition

Values

Unit

Gate-emitter peak voltage

V_GES

20

V

Table 4

Characteristic values

Parameter

Symbol Note or test condition

Values

Unit

Min. Typ. Max.

Collector-emitter saturation

voltage

V_{CE sat}I_C= 10 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

1.60

1.74

1.82

5.80

0.157

0

TBD

V

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 0.22 mA, V_CE= V_GE, T_vj= 25 °C

5.15

6.45

V

V_GE= 15 V, V_CE= 600 V

T_vj= 25 °C

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

C_res

I_CES

f = 100 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

1.89

0.0066

nF

Reverse transfer capacitance

Collector-emitter cut-oﬀ

current

V_CE= 1200 V, V_GE= 0 V

T_vj= 25 °C

0.0045 mA

Gate-emitter leakage current

I_GES

t_don

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

100

nA

µs

Turn-on delay time

(inductive load)

I_C= 10 A, V_CE= 600 V,

V_GE= 15 V, R_Gon= 8.2 Ω

T_vj= 25 °C

0.023

0.025

0.026

0.014

0.017

0.019

0.124

0.157

0.176

0.227

0.347

0.422

0.73

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

Rise time (inductive load)

t_r

t_doﬀ

t_f

I_C= 10 A, V_CE= 600 V,

µs

V_GE= 15 V, R_Gon= 8.2 Ω

Turn-oﬀ delay time

(inductive load)

I_C= 10 A, V_CE= 600 V,

V_GE= 15 V, R_Goﬀ= 8.2 Ω

Fall time (inductive load)

I_C= 10 A, V_CE= 600 V,

V_GE= 15 V, R_Goﬀ= 8.2 Ω

µs

Turn-on energy loss per

pulse

E_on

I_C= 10 A, V_CE= 600 V,

L_σ= 35 nH, V_GE= 15 V,

R_Gon= 8.2 Ω, di/dt = 550

A/µs (T_vj= 175 °C)

mJ

0.94

1.13

Turn-oﬀ energy loss per

pulse

E_oﬀ

I_C= 10 A, V_CE= 600 V,

L_σ= 35 nH, V_GE= 15 V,

R_Goﬀ= 8.2 Ω, dv/dt =

2700 V/µs (T_vj= 175 °C)

0.623

0.97

1.17

Datasheet

4

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2021-03-19

FP10R12W1T7P_B11

™

EasyPIM module

3 Diode, Inverter

Table 4

Characteristic values (continued)

Symbol Note or test condition

Parameter

Values

Min. Typ. Max.

32

Unit

SC data

I_SC

V_GE≤ 15 V, V_CC= 800 V,

V_CEmax=V_CES-L_sCE*di/dt

t_P≤ 8 µs,

T_vj= 150 °C

A

t_P≤ 7 µs,

T_vj= 175 °C

30

Thermal resistance, junction

to heatsink

R_thJH

T_{vj op}

per IGBT, Valid with IFX pre-applied Thermal

Interface Material

2.18 K/W

175 °C

Temperature under

switching conditions

-40

Note:

T_{vj op}> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN

2018-14.

3

Diode, Inverter

Table 5

Maximum rated values

Parameter

Symbol Note or test condition

Values

Unit

Repetitive peak reverse

voltage

V_RRM

T_vj= 25 °C

1200

V

Continous DC forward

current

I_F

10

20

A

Repetitive peak forward

current

I²t - value

I_FRM

I²t

t_P= 1 ms

V_R= 0 V, t_P= 10 ms

T_vj= 125 °C

T_vj= 175 °C

27.5

24

A²s

Table 6

Characteristic values

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Forward voltage

V_F

I_F= 10 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

1.72

1.59

1.52

10.5

15.3

17.5

TBD

V

Peak reverse recovery

current

I_RM

I_F= 10 A, V_R= 600 V,

V_GE= -15 V, -di_F/dt = 550

A/µs (T_vj= 175 °C)

A

Datasheet

5

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2021-03-19

FP10R12W1T7P_B11

™

EasyPIM module

4 Diode, Rectifier

Table 6

Characteristic values (continued)

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Recovered charge

Q_r

I_F= 10 A, V_R= 600 V,

V_GE= -15 V, -di_F/dt = 550

A/µs (T_vj= 175 °C)

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

0.97

1.7

µC

2.2

Reverse recovery energy

E_rec

I_F= 10 A, V_R= 600 V,

V_GE= -15 V, -di_F/dt = 550

A/µs (T_vj= 175 °C)

0.24

0.51

0.72

mJ

Thermal resistance, junction

to heatsink

R_thJH

T_{vj op}

per diode, Valid with IFX pre-applied

Thermal Interface Material

2.71 K/W

175 °C

Temperature under

switching conditions

-40

Note:

T_{vj op}> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN

2018-14.

4

Diode, Rectifier

Table 7

Maximum rated values

Parameter

Symbol Note or test condition

V_RRMT_vj= 25 °C

Values

Unit

Repetitive peak reverse

voltage

1600

V

Maximum RMS forward

current per chip

I_FRMSMT_H= 100 °C

I_RMSMT_H= 100 °C

25

A

Maximum RMS current at

rectifier output

Surge forward current

I_FSM

I²t

t_P= 10 ms

T_vj= 25 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 150 °C

300

245

450

300

I²t - value

A²s

Table 8

Characteristic values

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Forward voltage

Reverse current

V_F

I_r

I_F= 10 A

T_vj= 150 °C

0.80

1

V

T_vj= 150 °C, V_R= 1600 V

mA

Thermal resistance, junction

to heatsink

R_thJH

per diode, Valid with IFX pre-applied

Thermal Interface Material

1.58 K/W

Datasheet

6

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2021-03-19

FP10R12W1T7P_B11

™

EasyPIM module

5 IGBT, Brake-Chopper

Table 8

Characteristic values (continued)

Parameter

Symbol Note or test condition

Values

Unit

Min. Typ. Max.

Temperature under

switching conditions

T_{vj, op}

-40

150

°C

5

IGBT, Brake-Chopper

Table 9

Maximum rated values

Parameter

Symbol Note or test condition

Values

1200

10

Unit

Collector-emitter voltage

V_CES

T_vj= 25 °C

V

A

Continous DC collector

current

I_CDC

I_CRM

V_GES

T_{vj max}= 175 °C

t_P= 1 ms

T_H= 100 °C

Repetitive peak collector

current

20

A

V

Gate-emitter peak voltage

Table 10

Characteristic values

Parameter

Symbol Note or test condition

Values

Unit

Min. Typ. Max.

Collector-emitter saturation

voltage

V_{CE sat}I_C= 10 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

1.60

1.74

1.82

5.80

0.157

0

TBD

V

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 0.22 mA, V_CE= V_GE, T_vj= 25 °C

5.15

6.45

V

V_GE= 15 V, V_CE= 600 V

T_vj= 25 °C

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

C_res

I_CES

f = 100 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

1.89

0.0066

nF

Reverse transfer capacitance

Collector-emitter cut-oﬀ

current

V_CE= 1200 V, V_GE= 0 V

T_vj= 25 °C

0.0045 mA

Gate-emitter leakage current

I_GES

t_don

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

100

nA

µs

Turn-on delay time

(inductive load)

I_C= 10 A, V_CE= 600 V,

V_GE= 15 V, R_Gon= 8.2 Ω

T_vj= 25 °C

0.023

0.025

0.026

0.014

0.017

0.019

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

Rise time (inductive load)

t_r

I_C= 10 A, V_CE= 600 V,

µs

V_GE= 15 V, R_Gon= 8.2 Ω

Datasheet

7

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2021-03-19

FP10R12W1T7P_B11

™

EasyPIM module

6 Diode, Brake-Chopper

Table 10

Characteristic values (continued)

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Turn-oﬀ delay time

t_doﬀ

I_C= 10 A, V_CE= 600 V,

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

0.124

0.157

0.176

0.227

0.347

0.422

0.73

µs

(inductive load)

V_GE= 15 V, R_Goﬀ= 8.2 Ω

Fall time (inductive load)

t_f

I_C= 10 A, V_CE= 600 V,

V_GE= 15 V, R_Goﬀ= 8.2 Ω

µs

mJ

A

Turn-on energy loss per

pulse

E_on

E_oﬀ

I_SC

I_C= 10 A, V_CE= 600 V,

L_σ= 35 nH, V_GE= 15 V,

R_Gon= 8.2 Ω, di/dt = 550

A/µs (T_vj= 175 °C)

0.94

1.13

Turn-oﬀ energy loss per

pulse

I_C= 10 A, V_CE= 600 V,

L_σ= 35 nH, V_GE= 15 V,

R_Goﬀ= 8.2 Ω, dv/dt =

2700 V/µs (T_vj= 175 °C)

0.623

0.97

1.17

SC data

V_GE≤ 15 V, V_CC= 800 V,

V_CEmax=V_CES-L_sCE*di/dt

t_P≤ 8 µs,

T_vj= 150 °C

32

t_P≤ 7 µs,

T_vj= 175 °C

30

Thermal resistance, junction

to heatsink

R_thJH

T_{vj op}

per IGBT, Valid with IFX pre-applied Thermal

Interface Material

2.18 K/W

175 °C

Temperature under

switching conditions

-40

Note:

T_{vj op}> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN

2018-14.

6

Diode, Brake-Chopper

Table 11

Maximum rated values

Parameter

Symbol Note or test condition

Values

Unit

Repetitive peak reverse

voltage

V_RRM

T_vj= 25 °C

1200

V

Continous DC forward

current

I_F

10

20

A

Repetitive peak forward

current

I²t - value

I_FRM

I²t

t_P= 1 ms

V_R= 0 V, t_P= 10 ms

T_vj= 125 °C

T_vj= 175 °C

27.5

24

A²s

Datasheet

8

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2021-03-19

FP10R12W1T7P_B11

™

EasyPIM module

7 NTC-Thermistor

Table 12

Characteristic values

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Forward voltage

V_F

I_RM

Q_r

I_F= 10 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

1.72

1.59

1.52

10.5

15.3

17.5

0.97

1.7

TBD

V

Peak reverse recovery

current

I_F= 10 A, V_R= 600 V,

-di_F/dt = 550 A/µs

(T_vj= 175 °C)

A

Recovered charge

I_F= 10 A, V_R= 600 V,

-di_F/dt = 550 A/µs

(T_vj= 175 °C)

µC

mJ

2.2

Reverse recovery energy

E_rec

I_F= 10 A, V_R= 600 V,

-di_F/dt = 550 A/µs

(T_vj= 175 °C)

0.24

0.51

0.72

Thermal resistance, junction

to heatsink

R_thJH

T_{vj op}

per diode, Valid with IFX pre-applied

Thermal Interface Material

2.68 K/W

175 °C

Temperature under

switching conditions

-40

Note:

T_{vj op}> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN

2018-14.

7

NTC-Thermistor

Table 13

Characteristic values

Parameter

Symbol Note or test condition

Values

Unit

Min. Typ. Max.

Rated resistance

Deviation of R₁₀₀

Power dissipation

B-value

R₂₅

ΔR/R

P₂₅

T_NTC= 25 °C

5

kΩ

%

T_NTC= 100 °C, R₁₀₀= 493 Ω

T_NTC= 25 °C

-5

5

20

mW

K

B_25/50R₂= R₂₅exp[B_25/50(1/T₂-1/(298,15 K))]

B_25/80R₂= R₂₅exp[B_25/80(1/T₂-1/(298,15 K))]

B_25/100R₂= R₂₅exp[B_25/100(1/T₂-1/(298,15 K))]

3375

3411

3433

B-value

K

B-value

K

Note:

Specification according to the valid application note.

Datasheet

9

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2021-03-19

FP10R12W1T7P_B11

™

EasyPIM module

8 Characteristics diagrams

8

Characteristics diagrams

output characteristic (typical), IGBT, Inverter

I_C= f(V_CE)

V_GE= 15 V

T_vj= 175 °C

20

18

16

14

12

10

8

20

18

16

14

12

10

8

6

4

2

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

transfer characteristic (typical), IGBT, Inverter

I_C= f(V_GE)

switching losses (typical), IGBT, Inverter

E = f(I_C)

V_CE= 20 V

R_Goﬀ= 8.2 Ω, R_Gon= 8.2 Ω, V_CE= 600 V, V_GE= 15 V

20

18

16

14

12

10

8

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

6

4

2

0

5

6

7

8

9

10

11

12

13

14

0

2

4

6

8

10 12 14 16 18 20

Datasheet

10

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FP10R12W1T7P_B11

™

EasyPIM module

8 Characteristics diagrams

switching losses (typical), IGBT, Inverter

E = f(R_G)

switching times (typical), IGBT, Inverter

t = f(I_C)

I_C= 10 A, V_CE= 600 V, V_GE= 15 V

R_Goﬀ= 8.2 Ω, R_Gon= 8.2 Ω, V_CE= 600 V, V_GE= 15 V, T_vj=

175 °C

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

10

1

0.1

0.01

0.001

0.0001

0

10

20

30

40

50

60

70

80

90

0

2

4

6

8

10 12 14 16 18 20

switching times (typical), IGBT, Inverter

dv/dt (typical), IGBT, Inverter

t = f(R_G)

dv/dt = f(R_G)

I_C= 10 A, V_CE= 600 V, V_GE= 15 V, T_vj= 175 °C

I_C= 10 A, V_CE= 600 V, V_GE= 15 V, T_vj= 25 °C

10

9

8

7

6

5

4

3

2

1

0

1

0.1

0.01

0.001

0

10

20

30

40

50

60

70

80

90

0

10

20

30

40

50

60

70

80

90

Datasheet

11

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FP10R12W1T7P_B11

™

EasyPIM module

8 Characteristics diagrams

transient thermal impedance , IGBT, Inverter

Z_th= f(t)

reverse bias safe operating area (RBSOA), IGBT,

Inverter

I_C= f(V_CE)

R_Goﬀ= 8.2 Ω, V_GE= 15 V, T_vj= 175 °C

10

24

22

20

18

16

14

12

10

8

1

6

4

2

0

0.1

0.001

0

200

400

600

800

1000 1200 1400

0.01

0.1

1

10

capacity characteristic (typical), IGBT, Inverter

C = f(V_CE)

gate charge characteristic (typical), IGBT, Inverter

V_GE= f(Q_G)

T_vj= 25 °C, f = 100 kHz, V_GE= 0 V

T_vj= 25 °C, I_C= 10 A

10

15

12

9

1

6

3

0.1

0

-3

-6

-9

-12

0.01

0.001

-15

0

10 20 30 40 50 60 70 80 90 100

0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16

Datasheet

12

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FP10R12W1T7P_B11

™

EasyPIM module

8 Characteristics diagrams

forward characteristic (typical), Diode, Inverter

I_F= f(V_F)

switching losses (typical), Diode, Inverter

E_rec= f(I_F)

R_Gon= 8.2 Ω, V_CE= 600 V

20

18

16

14

12

10

8

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

6

4

2

0

0.0

0.5

1.0

1.5

2.0

2.5

0

2

4

6

8

10 12 14 16 18 20

switching losses (typical), Diode, Inverter

E_rec= f(R_G)

transient thermal impedance , Diode, Inverter

Z_th= f(t)

V_CE= 600 V, I_F= 10 A

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

10

1

0.1

0.001

0

10

20

30

40

50

60

70

80

90

0.01

0.1

1

10

Datasheet

13

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FP10R12W1T7P_B11

™

EasyPIM module

8 Characteristics diagrams

forward characteristic (typical), Diode, Rectifier

transient thermal impedance , Diode, Rectifier

I_F= f(V_F)

Z_th= f(t)

20

18

16

14

12

10

8

10

1

0.1

6

4

2

0

0.01

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.001

0.01

0.1

1

10

output characteristic (typical), IGBT, Brake-Chopper

I_C= f(V_CE)

V_GE= 15 V

forward characteristic (typical), Diode, Brake-

Chopper

I_F= f(V_F)

20

18

16

14

12

10

8

20

18

16

14

12

10

8

6

4

2

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0

0.5

1.0

1.5

2.0

2.5

Datasheet

14

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FP10R12W1T7P_B11

™

EasyPIM module

8 Characteristics diagrams

temperature characteristic (typical), NTC-Thermistor

R = f(T_NTC

)

100000

10000

1000

100

10

0

25

50

75

100

125

150

175

Datasheet

15

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FP10R12W1T7P_B11

™

EasyPIM module

9 Circuit diagram

9

Circuit diagram

J

Figure 2

Datasheet

16

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FP10R12W1T7P_B11

™

EasyPIM module

10 Package outlines

10

Package outlines

Infineon

Figure 3

Datasheet

17

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2021-03-19

FP10R12W1T7P_B11

™

EasyPIM module

11 Module label code

11

Module label code

Code format

Encoding

Data Matrix

ASCII text

Barcode Code128

Code Set A

23 digits

Symbol size

Standard

16x16

IEC24720 and IEC16022

IEC8859-1

Code content

Content

Digit

1 – 5

6 - 11

12 - 19

20 – 21

22 – 23

Example

Module serial number

Module material number

Production order number

Date code (production year)

Date code (production week)

71549

142846

55054991

15

30

Example

71549142846550549911530

Figure 4

Datasheet

18

0.10

2021-03-19

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2021-03-19

Published by

Infineon Technologies AG

81726 Munich, Germany

IMPORTANT NOTICE

Please note that this product is not qualified

according to the AEC Q100 or AEC Q101 documents

of the Automotive Electronics Council.

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

©

2021 Infineon Technologies AG

Except as otherwise explicitly approved by Infineon

Technologies in

a written document signed by

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

Document reference

IFX-

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.


型号：	FP10R12W1T7P_B11
厂家：	Infineon
描述：	PressFIT
文件：	总19页 (文件大小：963K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FP10R12W1T7P_B11 [INFINEON]

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