FP10R06YE3 [EUPEC]

IGBT-modules; IGBT模块

FP10R06YE3


型号：	FP10R06YE3
厂家：	EUPEC GMBH
描述：	IGBT-modules IGBT模块晶体晶体管双极性晶体管栅局域网
文件：	总12页 (文件大小：414K)
下载：	下载PDF数据表文档文件

FP10R06YE3_B4

IGBT-modules

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27 EUPEC

FP10R12KE3

Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

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2 INFINEON

FP10R12NT3

Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, ECONOPIM-23

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6 INFINEON

FP10R12W1T3

IGBT-modules

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54 EUPEC

FP10R12W1T4

EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

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359 INFINEON

FP10R12W1T4_B11

IGBT-Wechselrichter / IGBT-inverter

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80 INFINEON

FP10R12W1T4_B3

EasyPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

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113 INFINEON

FP10R12W1T4B11BOMA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-22

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0 INFINEON

FP10R12W1T4B3BOMA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-21

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1 INFINEON

FP10R12W1T4BOMA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

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0 INFINEON

FP10R12W1T4P

Insulated Gate Bipolar Transistor,

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1 INFINEON

FP10R12W1T4PB11BPSA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

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1 INFINEON

FP10R12W1T4PBPSA1

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

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0 INFINEON

FP10R12YT3

IGBT-modules

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269 EUPEC

FP10R12YT3_B4

IGBT-modules

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45 EUPEC

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