BUZ102 [INFINEON]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated); SIPMOS大功率晶体管(N沟道增强型雪崩额定的dv / dt评分)![BUZ102](http://pdffile.icpdf.com/pdf1/p00046/img/icpdf/BUZ102_239324_icpdf.jpg)
型号: | BUZ102 |
厂家: | ![]() |
描述: | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) |
文件: | 总9页 (文件大小:187K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BUZ 102
®
SIPMOS Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
R
DS(on)
Package
Ordering Code
D
Ω
BUZ 102
50 V
42 A
0.023
TO-220 AB
C67078-S1351-A2
Maximum Ratings
Parameter
Symbol
Values
42
Unit
Continuous drain current
I
A
D
T = 111 °C
C
Pulsed drain current
I
Dpuls
T = 25 °C
C
168
Avalanche energy, single pulse
E
AS
mJ
Ω
I = 42 A, V = 25 V, R = 25
D
DD
GS
L = 102 µH, T = 25 °C
180
j
Reverse diode dv/dt
dv/dt
kV/µs
I = 42 A, V = 40 V, di /dt = 200 A/µs
S
DS
F
T
= 175 °C
6
jmax
±
Gate source voltage
Power dissipation
V
P
20
V
GS
W
tot
T = 25 °C
C
200
Operating temperature
Storage temperature
T
T
-55 ... + 175 °C
-55 ... + 175
j
stg
≤
Thermal resistance, chip case
R
R
0.83
K/W
thJC
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
≤ 75
thJA
E
55 / 175 / 56
Semiconductor Group
1
07/96
BUZ 102
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain- source breakdown voltage
V
V
V
(BR)DSS
GS(th)
DSS
V
GS
= 0 V, I T = -40 °C
50
-
-
D,
j
Gate threshold voltage
=
V
V
I = 1 mA
2.1
3
4
GS DS, D
Zero gate voltage drain current
I
V
V
V
= 50 V, V = 0 V, T = 25 °C
-
-
-
0.1
1
1
µA
nA
µA
nA
DS
DS
DS
GS
j
= 50 V, V = 0 V, T = -40 °C
100
100
GS
j
= 50 V, V = 0 V, T = 150 °C
10
GS
j
Gate-source leakage current
= 20 V, V = 0 V
I
GSS
V
GS
-
-
10
100
DS
Ω
Drain-Source on-resistance
= 10 V, I = 42 A
R
DS(on)
V
GS
0.017
0.023
D
Semiconductor Group
2
07/96
BUZ 102
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
S
fs
≥
V
DS
2 I
R I = 42 A
10
28
-
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
pF
iss
oss
V
GS
-
-
-
1620
550
240
2160
825
360
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
rss
V
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 3 A
t
t
t
t
ns
d(on)
V
DD
GS
D
Ω
R
GS
= 50
-
-
-
-
25
38
Rise time
= 30 V, V = 10 V, I = 3 A
r
V
DD
GS
D
Ω
R
GS
= 50
95
140
400
215
Turn-off delay time
= 30 V, V = 10 V, I = 3 A
d(off)
V
DD
GS
D
Ω
R
GS
= 50
300
160
Fall time
= 30 V, V = 10 V, I = 3 A
f
V
DD
GS
D
Ω
= 50
R
GS
Semiconductor Group
3
07/96
BUZ 102
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Inverse diode continuous forward current I
A
S
T = 25 °C
-
-
-
-
-
-
42
168
1.7
-
C
Inverse diode direct current,pulsed
I
SM
T = 25 °C
C
-
Inverse diode forward voltage
V
SD
V
V
GS
= 0 V, I = 84 A
1.2
75
0.12
F
Reverse recovery time
V = 30 V, I =l di /dt = 100 A/µs
t
ns
µC
rr
R
F S,
F
Reverse recovery charge
Q
rr
=
V = 30 V, I l di /dt = 100 A/µs
R
-
F S,
F
Semiconductor Group
4
07/96
BUZ 102
Drain current
Power dissipation
ƒ
I = (T )
ƒ
P
= (T )
D
C
tot
C
≥
parameter: V
10 V
GS
45
A
220
W
180
160
140
120
100
80
ID
Ptot
35
30
25
20
15
10
60
40
5
0
20
0
0
0
20 40 60 80 100 120 140 °C 180
TC
20 40 60 80 100 120 140 °C 180
TC
Safe operating area
Transient thermal impedance
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
D
DS
p
parameter: D = 0.01, T = 25°C
parameter: D = t / T
C
p
10 3
10 0
A
K/W
t
ID
ZthJC
= 30.0µs
p
I
V
10 2
10 -1
100 µs
1 ms
R
D = 0.50
0.20
10 ms
10 1
10 -2
0.10
0.05
0.02
DC
0.01
single pulse
10 0
10 -3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
10 0
10 1
V 10 2
VDS
5
07/96
Semiconductor Group
BUZ 102
Typ. output characteristics
ƒ(
Typ. drain-source on-resistance
ƒ(
I =
V
)
R
=
I )
D
D
DS
DS (on)
parameter: t = 80 µs
parameter: V
p
GS
100
0.070
P
tot = 200W
a
b
c
d
e
f
l
Ω
A
80
70
60
50
40
30
20
j
k
h
i
0.060
V
[V]
GS
a
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
10.0
20.0
ID
RDS (on)
0.055
g
b
c
d
e
f
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
f
g
h
i
e
g
h
j
d
b
k
l
i
j
c
a
k
0.010
V
[V] =
b
GS
a
10
0
c
d
e
f
g
h
i
j
k
0.005
0.000
4.55.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
0
10 20 30 40 50 60 70
A
90
VDS
ID
Typ. transfer characteristics I = f (V
)
Typ. forward transconductance g = f (I )
D
fs
D
GS
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
≥
≥
V
DS
2 x I x R
V
DS
2 x I x R
D
DS(on)max
D
DS(on)max
60
A
30
S
26
24
22
20
18
16
14
12
10
8
50
45
40
35
30
25
20
15
10
ID
gfs
6
4
5
0
2
0
0
1
2
3
4
5
6
7
8
V
10
0
10
20
30
40
A
60
VGS
ID
Semiconductor Group
6
07/96
BUZ 102
Gate threshold voltage
Drain-source on-resistance
ƒ
= (T )
j
V
ƒ
= (T )
j
R
GS (th)
DS (on)
parameter: V = V , I = 1 mA
parameter: I = 42 A, V = 10 V
GS
DS
D
D
GS
0.065
4.6
V
Ω
98%
4.0
0.055
VGS(th)
RDS (on)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
typ
2%
98%
typ
0.4
0.0
0.005
0.000
-60
-20
20
60
100
°C
Tj
180
-60
-20
20
60
100
°C
Tj
180
Typ. capacitances
Forward characteristics of reverse diode
C = f (V )
ƒ
I = (V
)
DS
F
SD
parameter:V = 0V, f = 1MHz
parameter: T , t = 80 µs
GS
j
p
10 4
10 3
A
IF
C
pF
10 2
10 1
10 0
Ciss
10 3
Coss
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
Crss
10 2
0
5
10
15
20
25
30
V
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VDS
VSD
7
07/96
Semiconductor Group
BUZ 102
ƒ
Avalanche energy E = (T )
Typ. gate charge
AS
j
ƒ
parameter: I = 42 A, V = 25 V
V
= (Q
)
D
DD
GS
Gate
Ω
R
= 25 , L = 102 µH
parameter: I
= 63 A
D puls
GS
190
mJ
16
V
160
EAS
VGS
12
140
120
100
80
10
8
V
V
DS max
0,2
0,8
DS max
6
60
4
40
2
20
0
0
0
20
40
60
80 100 120 140
°C 180
Tj
10
20
30
40
50
60
nC
80
QGate
Drain-source breakdown voltage
ƒ
= (T )
j
V
(BR)DSS
62
V
60
V(BR)DSS 59
58
57
56
55
54
53
52
51
50
49
48
47
-60
-20
20
60
100
°C
Tj
180
Semiconductor Group
8
07/96
BUZ 102
Package Outlines
TO-220 AB
Dimension in mm
Semiconductor Group
9
07/96
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