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BUZ102AL [INFINEON]

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated); SIPMOS大功率晶体管（N沟道增强型雪崩额定逻辑电平dv / dt的额定）
BUZ102AL
型号： BUZ102AL
厂家： Infineon    Infineon
描述：

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
SIPMOS大功率晶体管（N沟道增强型雪崩额定逻辑电平dv / dt的额定）

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BUZ 102AL  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
• Logic Level  
• dv/dt rated  
• Low on-resistance  
• 175 °C operating temperature  
• also in TO-220 SMD available  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
DS  
I
R
DS(on)  
Package  
Ordering Code  
D
BUZ 102AL  
50 V  
42 A  
0.028 Ω  
TO-220 AB  
C67078-S1356-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
42  
Unit  
Continuous drain current  
I
A
D
T = 97 °C  
C
Pulsed drain current  
I
Dpuls  
T = 25 °C  
C
168  
Avalanche energy, single pulse  
I = 42 A, V = 25 V, R = 25 Ω  
E
AS  
mJ  
D
DD  
GS  
L = 102 µH, T = 25 °C  
180  
j
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = 42 A, V = 40 V, di /dt = 200 A/µs  
S
DS  
F
T
= 175 °C  
6
jmax  
±
±
Gate source voltage  
V
V
P
14  
20  
V
GS  
Gate-source peak voltage,aperiodic  
Power dissipation  
gs  
W
tot  
T = 25 °C  
C
200  
Semiconductor Group  
1
07/96  
BUZ 102AL  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Operating temperature  
T
T
-55 ... + 175 °C  
-55 ... + 175  
j
Storage temperature  
stg  
Thermal resistance, chip case  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
R
≤ 0.83  
K/W  
thJC  
thJA  
≤
R
75  
E
55 / 175 / 56  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
Static Characteristics  
Drain- source breakdown voltage  
V
V
V
(BR)DSS  
GS(th)  
DSS  
V
GS  
= 0 V, I = 0.25 mA, T = -40 °C  
50  
-
-
D
j
Gate threshold voltage  
=
V
V
I = 1 mA  
1.2  
1.6  
2
GS DS, D  
Zero gate voltage drain current  
I
V
V
V
= 50 V, V = 0 V, T = 25 °C  
-
-
-
0.1  
1
1
µA  
nA  
µA  
nA  
DS  
DS  
DS  
GS  
j
= 50 V, V = 0 V, T = -40 °C  
100  
100  
GS  
j
= 50 V, V = 0 V, T = 150 °C  
10  
GS  
j
Gate-source leakage current  
= 20 V, V = 0 V  
I
GSS  
V
GS  
-
-
10  
100  
DS  
Ω
Drain-Source on-resistance  
= 5 V, I = 21 A  
R
DS(on)  
V
GS  
0.02  
0.028  
D
Semiconductor Group  
2
07/96  
BUZ 102AL  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
≥
V
DS  
2 I  
R I = 21 A  
10  
35  
-
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
pF  
iss  
oss  
V
GS  
-
-
-
1750  
550  
240  
2330  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
V
GS  
825  
360  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
rss  
V
GS  
DS  
Turn-on delay time  
= 30 V, V = 5 V, I = 3 A  
t
t
t
t
ns  
d(on)  
V
DD  
GS  
D
Ω
R
GS  
= 50  
-
-
-
-
30  
45  
Rise time  
= 30 V, V = 5 V, I = 3 A  
r
V
DD  
GS  
D
Ω
R
GS  
= 50  
135  
330  
110  
205  
440  
150  
Turn-off delay time  
= 30 V, V = 5 V, I = 3 A  
d(off)  
V
DD  
GS  
D
Ω
= 50  
R
GS  
Fall time  
= 30 V, V = 5 V, I = 3 A  
f
V
DD  
GS  
D
Ω
= 50  
R
GS  
Semiconductor Group  
3
07/96  
BUZ 102AL  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Reverse Diode  
Inverse diode continuous forward current I  
A
S
T = 25 °C  
-
-
-
-
-
-
42  
C
Inverse diode direct current,pulsed  
I
SM  
T = 25 °C  
C
-
168  
1.7  
Inverse diode forward voltage  
V
SD  
V
V
GS  
= 0 V, I = 84 A  
1.2  
85  
120  
F
Reverse recovery time  
V = 30 V, I =l di /dt = 100 A/µs  
t
ns  
µC  
rr  
-
R
F S,  
F
Reverse recovery charge  
Q
rr  
=
V = 30 V, I l di /dt = 100 A/µs  
R
-
F S,  
F
Semiconductor Group  
4
07/96  
BUZ 102AL  
Drain current  
Power dissipation  
ƒ
I = (T )  
ƒ
P
= (T )  
D
C
tot  
C
≥
parameter: V  
5 V  
GS  
45  
A
220  
W
180  
160  
140  
120  
100  
80  
ID  
Ptot  
35  
30  
25  
20  
15  
10  
60  
40  
5
0
20  
0
0
0
20 40 60 80 100 120 140 °C 180  
TC  
20 40 60 80 100 120 140 °C 180  
TC  
Safe operating area  
Transient thermal impedance  
ƒ
ƒ
I = (V  
)
Z
= (t )  
th JC  
D
DS  
p
parameter: D = 0.01, T = 25°C  
parameter: D = t / T  
C
p
10 3  
10 0  
A
K/W  
t
ID  
ZthJC  
= 30.0µs  
p
I
10 2  
10 1  
10 0  
V
10 -1  
100 µs  
1 ms  
R
D = 0.50  
0.20  
10 -2  
0.10  
10 ms  
0.05  
0.02  
DC  
0.01  
single pulse  
10 -3  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
tp  
10 0  
10 1  
V 10 2  
VDS  
Semiconductor Group  
5
07/96  
BUZ 102AL  
Typ. output characteristics  
ƒ(  
Drain-source on-resistance  
I =  
V
)
ƒ
= (T )  
j
R
D
DS  
DS (on)  
parameter: t = 80 µs  
parameter: I = 21 A, V = 5 V  
p
D
GS  
100  
0.080  
P
tot = 200W  
k
l
A
80  
70  
60  
50  
40  
30  
20  
i
h
j
g
Ω
V
[V]  
f
GS  
a
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
7.0  
8.0  
10.0  
ID  
RDS (on)  
b
c
d
e
f
0.060  
0.050  
0.040  
0.030  
0.020  
e
g
98%  
typ  
d h  
i
j
k
l
c
a
0.010  
0.000  
10  
0
b
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
V
VDS  
5.0  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
Typ. forward transconductance g = f  
(I )  
D
fs  
Typ. transfer characteristics I = f (V  
)
GS  
D
parameter: t = 80 µs,  
p
parameter: t = 80 µs  
p
≥
V
DS  
2 x I x R  
D
DS(on)max  
≥
V
DS  
2 x I x R  
D
DS(on)max  
45  
S
50  
A
gfs  
35  
30  
25  
20  
15  
10  
40  
35  
30  
25  
20  
15  
10  
ID  
5
0
5
0
0
5
10 15 20 25 30 35  
A
ID  
45  
0
1
2
3
4
5
6
7
8
V
VGS  
10  
Semiconductor Group  
6
07/96  
BUZ 102AL  
Typ. drain-source on-resistance  
ƒ(  
Gate threshold voltage  
ƒ
= (T )  
GS (th) j  
R
=
I )  
V
DS (on)  
D
parameter: V  
parameter: V = V , I = 1 mA  
GS DS D  
GS  
0.09  
4.6  
V
a
b
c
d
e
Ω
4.0  
RDS (on)  
0.07  
VGS(th)  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.06  
0.05  
0.04  
0.03  
0.02  
98%  
typ  
f
2%  
g
k
h
j
i
V
[V] =  
b
GS  
a
0.01  
0.00  
c
d
e
f
g
h
i
j
k
0.4  
0.0  
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0  
0
10 20 30 40 50 60 70 80  
A
100  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
ID  
Typ. capacitances  
Forward characteristics of reverse diode  
C = f (V )  
ƒ
I = (V  
)
SD  
DS  
F
parameter:V = 0V, f = 1MHz  
parameter: T , t = 80 µs  
GS  
j
p
10 4  
10 3  
pF  
A
IF  
C
Ciss  
10 3  
10 2  
10 1  
10 2  
10 1  
10 0  
Coss  
Crss  
= 25 °C typ  
Tj  
Tj  
Tj  
= 175 °C typ  
= 25 °C (98%)  
Tj = 175 °C (98%)  
0
5
10  
15  
20  
25  
30  
V
40  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
3.0  
VDS  
VSD  
Semiconductor Group  
7
07/96  
BUZ 102AL  
ƒ
Avalanche energy E = (T )  
Typ. gate charge  
AS  
j
parameter: I = 42 A, V = 25 V  
ƒ
V
= (Q  
)
D
DD  
GS  
Gate  
Ω
R
= 25 , L = 102 µH  
parameter: I  
= 63 A  
GS  
D puls  
190  
mJ  
16  
V
160  
EAS  
VGS  
140  
120  
100  
80  
12  
10  
8
V
V
DS max  
0,2  
0,8  
DS max  
6
60  
4
40  
2
20  
0
0
0
20  
40  
60  
80 100 120 140  
°C 180  
Tj  
20  
40  
60  
80  
nC  
110  
QGate  
Drain-source breakdown voltage  
ƒ
= (T )  
j
V
(BR)DSS  
62  
V
60  
V(BR)DSS 59  
58  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
Semiconductor Group  
8
07/96  
BUZ 102AL  
Package Outlines  
TO-220 AB  
Dimension in mm  
Semiconductor Group  
9
07/96  

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