BUZ102SE3045A [INFINEON]
SIPMOS Power Transistor; SIPMOS功率晶体管
| 型号： | BUZ102SE3045A |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Power Transistor |
| 文件： | 总8页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ 102S
SIPMOS Power Transistor
Product Summary
Features
Drain source voltage
55
0.018
52
V
V
DS
• N channel
Drain-Source on-state resistance
Continuous drain current
R
Ω
•
Enhancement mode
• Avalanche rated
• d /d rated
• 175 ˚C operating temperature
DS(on)
A
I
D
v
t
Pin 1 Pin 2 Pin 3
Type
Package
Ordering Code
Packaging
G
D
S
BUZ102S
P-TO220-3-1 Q67040-S4011-A2 Tube
P-TO263-3-2 Q67040-S4011-A6 Tape and Reel
P-TO263-3-2 Q67040-S4011-A5 Tube
BUZ102S E3045A
BUZ102S E3045
Maximum Ratings, at
T
= 25 ˚C unless unless specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
A
I
D
T
= 25 ˚C
52
37
C
T
= 100 ˚C
C
Pulsed drain current
= 25 ˚C
208
IDpulse
T
C
Avalanche energy, single pulse
= 52 A, = 25 V, = 25 Ω
245
mJ
E
E
AS
I
V
R
GS
D
DD
12
6
Avalanche energy, periodic limited by
Reverse diode d /d
= 52 A, = 40 V, d
T
jmax
AR
kV/µs
v
t
d
v
/d
t
I
V
i/d
t
= 200 A/
µ
s,
S
DS
T
= 175 ˚C
jmax
Gate source voltage
Power dissipation
V
V
P
20
GS
120
W
tot
T
= 25 ˚C
C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55... +175
55/175/56
˚C
T , T
j stg
Data Book
1
05.99
BUZ 102S
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
-
-
1.25 K/W
R
thJC
62
R
thJA
R
thJA
-
-
-
-
62
40
2
1)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
55
typ. max.
Static Characteristics
Drain- source breakdown voltage
-
-
V
V
V
(BR)DSS
GS(th)
V
= 0 V, I = 0.25 mA, T = 25 ˚C
D j
GS
2.1
3
4
Gate threshold voltage, V = V
GS
DS
I = 90 µA
D
Zero gate voltage drain current
µA
I
DSS
V
V
= 50 V, V = 0 V, T = 25 ˚C
-
-
0.1
-
1
DS
DS
GS
j
= 50 V, V = 0 V, T = 150 ˚C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
-
10
100 nA
I
GSS
V
GS
DS
Drain-Source on-state resistance
R
Ω
DS(on)
V
= 10 V, I = 37 A
D
-
0.0155 0.018
GS
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book
2
05.99
BUZ 102S
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
10
-
28
-
S
g
fs
V
≥2*I *R
, I = 37 A
DS(on)max D
DS
D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
1220 1525 pF
C
C
C
iss
V
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
-
410
210
12
515
265
18
oss
rss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
-
V
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 52 A,
-
ns
t
d(on)
V
DD
GS
D
R = 6.8 Ω
G
Rise time
-
-
-
22
30
25
33
45
40
t
r
V
= 30 V, V = 10 V, I = 52 A,
GS D
DD
R = 6.8 Ω
G
Turn-off delay time
= 30 V, V = 10 V, I = 52 A,
t
d(off)
V
DD
GS
D
R = 6.8 Ω
G
Fall time
t
f
V
= 30 V, V = 10 V, I = 52 A,
GS D
DD
R = 6.8 Ω
G
Data Book
3
05.99
BUZ 102S
Electrical Characteristics, at
T
= 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
Gate to source charge
-
-
-
-
8
12
34.5
70
nC
Q
Q
gs
V
= 40 V, I = 52 A
D
DD
Gate to drain charge
= 40 V, = 52 A
23
45
5.9
gd
V
I
D
DD
Gate charge total
= 40 V, = 52 A,
Q
g
V
I
V
= 0 to 10 V
GS
DD
D
Gate plateau voltage
= 40 V, = 52 A
-
V
V
(plateau)
V
I
D
DD
Reverse Diode
Inverse diode continuous forward current
-
-
-
-
-
-
-
52
208
1.7
A
V
I
S
T = 25 ˚C
C
Inverse diode direct current,pulsed
I
SM
T = 25 ˚C
C
Inverse diode forward voltage
1.2
70
0.15
V
SD
V
= 0 V, I = 104 A
F
GS
Reverse recovery time
V = 30 V, I =I , di /dt = 100 A/µs
105 ns
0.25 µC
t
rr
R
F
S
F
Reverse recovery charge
Q
rr
V = 30 V, I =l , di /dt = 100 A/µs
R
F S
F
Data Book
4
05.99
BUZ 102S
Power Dissipation
Drain current
I = f (T )
P
= f (T )
tot
C
D
C
parameter: V ≥ 10 V
GS
BUZ102S
BUZ102S
60
2.8
W
A
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
45
40
P
I
35
30
25
20
15
10
5
0
˚C
˚C
190
0
20 40 60 80 100 120 140 160
190
0
20 40 60 80 100 120 140 160
T
T
C
C
Safe operating area
I = f (V
Transient thermal impedance
)
Z
= f (t )
D
DS
thJC p
parameter : D = 0 , T = 25 ˚C
parameter : D = t /T
C
p
BUZ102S
BUZ102S
10 3
10 1
K/W
A
10 0
t
= 19.0µs
p
10 2
10 -1
I
I
Z
100 µs
V
10 -2
D = 0.50
0.20
R
10 1
10 -3
0.10
1 ms
0.05
10 ms
0.02
single pulse
10 -4
0.01
DC
V
10 0
10 -5
10 -1
10 0
10 1
10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
V
t
p
DS
Data Book
5
05.99
BUZ 102S
Typ. output characteristics
I = f (V
Typ. drain-source-on-resistance
= f (I )
)
DS
D
R
DS(on)
D
parameter: t = 80 µs
p
parameter: V
GS
BUZ102S
BUZ102S
130
Ptot = 120W
0.060
A
Ω
l
b
c
d
e
f
g
h
110
100
90
80
70
60
50
40
30
20
10
0
V
[V]
k
i
j
GS
a
4.0
4.5
0.050
0.045
0.040
h
b
c
d
e
f
5.0
5.5
g
e
6.0
I
6.5
R
0.035
f
g
h
i
7.0
0.030
0.025
0.020
0.015
0.010
7.5
8.0
i
j
9.0
d
b
k
l
10.0
20.0
j
k
c
a
l
V
[V] =
c
GS
b
d
e
f
g
h
i
j
k
l
0.005
0.000
4.5 5.0 5.5 6.0 6.5
7.0 7.5 8.0 9.0 10.0 20.0
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5.0
A
0
20
40
60
80
120
V
DS
I
D
Typ. forward transconductance
Typ. transfer characteristics I = f (V
)
D
GS
g = f(I ); T = 25˚C
parameter: t = 80 µs
fs
D
j
p
parameter: g
V
≥ 2 x I x R
fs
DS
D
DS(on) max
80
35
S
A
25
I
gf
20
15
10
5
40
20
0
0
V
A
2
3
4
5
7
0
10
20
30
40
50
70
V
I
D
GS
Data Book
6
05.99
BUZ 102S
Gate threshold voltage
= f (T )
Drain-source on-resistance
= f (T )
V
GS(th)
j
R
DS(on)
j
parameter : V = V , I = 90 µA
GS
DS D
parameter : I = 37 A, V = 10 V
D
GS
BUZ102S
5.0
V
0.065
Ω
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0.055
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
V
R
max
98%
typ
typ
min
˚C
-60
-20
20
60
100
140
200
˚C
-60
-20
20
60
100
140
200
T
j
T
j
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
I = f (V
)
)
SD
DS
F
parameter: V = 0 V, f = 1 MHz
parameter: T , t = 80 µs
GS
j
p
BUZ102S
10 4
10 3
A
pF
10 2
10 1
10 0
I
Ciss
10 3
Coss
Crss
Tj = 25 ˚C typ
Tj = 175 ˚C typ
Tj = 25 ˚C (98%)
Tj = 175 ˚C (98%)
10 2
V
0
10
20
40
V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
3.0
V
V
DS
SD
Data Book
7
05.99
BUZ 102S
Typ. gate charge
Avalanche Energy E = f (T )
AS
j
V
= f (Q
)
parameter: I = 52 A, V = 25 V
GS
Gate
D
DD
parameter: I
= 52 A
R
= 25 Ω
D puls
GS
BUZ102S
260
mJ
16
V
220
200
180
160
140
120
100
80
12
10
8
E
V
V
V
DS max
0,2
0,8
DS max
6
4
60
40
2
20
0
0
˚C
20
40
60
80 100 120 140
180
0
10
20
30
40
50
70
nC
T
Q
Gate
j
Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
BUZ102S
66
V
64
62
60
58
56
54
52
50
V
˚C
-60
-20
20
60
100
140
200
T
j
Data Book
8
05.99
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