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BUZ102S-4 [INFINEON]

Power Field-Effect Transistor, 6.4A I(D), 55V, 0.028ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DSO-28;
BUZ102S-4
型号： BUZ102S-4
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 6.4A I(D), 55V, 0.028ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DSO-28

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BUZ 102S-4  
Preliminary data  
®
SIPMOS Power Transistor  
• Quad-channel  
• Enhancement mode  
• Avalanche-rated  
• dv/dt rated  
Type  
V
I
R
DS(on)  
Package  
P-DSO-28  
Ordering Code  
C67078-S. . . . -A..  
DS  
D
BUZ 102S-4  
55 V  
6.4 A  
0.028 Ω  
Maximum Ratings  
Parameter  
Symbol  
Values  
6.4  
Unit  
Continuous drain current one channel active  
I
A
D
T = 25 °C  
A
Pulsed drain current one channel active  
I
Dpuls  
T = 25 °C  
25.6  
A
Avalanche energy, single pulse  
E
mJ  
AS  
Ω
I = 6.4 A, V = 25 V, R = 25  
D
DD  
GS  
L = 12 mH, T = 25 °C  
245  
j
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = 6.4 A, V = 40 V, di /dt = 200 A/µs  
S
DS  
F
T
= 175 °C  
6
jmax  
Gate source voltage  
Power dissipation ,one channel active  
V
P
± 20  
V
GS  
W
tot  
T = 25 °C  
2.4  
A
Operating temperature  
T
-55 ... + 175 °C  
-55 ... + 175  
j
Storage temperature  
T
stg  
IEC climatic category, DIN IEC 68-1  
55 / 175 / 56  
Semiconductor Group  
1
07/Oct/1997  
BUZ 102S-4  
Preliminary data  
Thermal Characteristics  
Parameter  
Symbol  
Values  
min. typ.  
Unit  
max.  
1)  
Thermal resistance, junction - soldering point  
R
R
-
-
-
-
tbd  
K/W  
thJS  
2)  
Thermal resistance, junction - ambient  
62.5  
thJA  
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for  
Drain connection. PCB is vertical without blown air.  
2) one channel active  
Electrical Characteristics,  
Parameter  
= 25°C, unless otherwise specified  
at T  
j
Symbol  
Values  
Unit  
min.  
typ.  
max.  
Static Characteristics  
Drain- source breakdown voltage  
= 0 V, I = 0.25 mA, T = 25 °C  
V
V
V
(BR)DSS  
GS(th)  
DSS  
V
55  
-
-
GS  
D
j
Gate threshold voltage  
=V  
I = 90 µA  
V
2.1  
3
4
GS DS, D  
Zero gate voltage drain current  
I
µA  
V
V
V
= 55 V, V  
= 55 V, V  
= 55 V, V  
= 0 V, T = -40 °C  
-
-
-
-
0.1  
1
DS  
DS  
DS  
GS  
GS  
GS  
j
= 0 V, T = 25 °C  
0.1  
-
j
= 0 V, T = 150 °C  
100  
j
Gate-source leakage current  
= 20 V, V = 0 V  
I
nA  
GSS  
V
GS  
-
-
10  
100  
DS  
Drain-Source on-resistance  
= 10 V, I = 6.4 A  
R
Ω
DS(on)  
V
0.02  
0.028  
GS  
D
Semiconductor Group  
2
07/Oct/1997  
BUZ 102S-4  
Preliminary data  
Electrical Characteristics,  
Parameter  
= 25°C, unless otherwise specified  
at T  
j
Symbol  
Values  
Unit  
min.  
typ.  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
≥
V
2 I  
R I = 6.4 A  
8
-
-
-
DS  
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
pF  
iss  
oss  
V
1220  
410  
210  
1525  
GS  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
V
-
515  
265  
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
rss  
V
-
GS  
DS  
Turn-on delay time  
= 30 V, V = 10 V, I = 6.4 A  
t
t
t
t
ns  
d(on)  
V
DD  
GS  
D
Ω
R = 7.1  
-
-
-
20  
22  
60  
30  
33  
90  
G
Rise time  
r
V
DD  
= 30 V, V = 10 V, I = 6.4 A  
GS D  
R = 7.1 Ω  
G
Turn-off delay time  
= 30 V, V = 10 V, I = 6.4 A  
d(off)  
V
DD  
GS  
D
R = 7.1 Ω  
G
Fall time  
f
V
= 30 V, V = 10 V, I = 6.4 A  
DD  
GS  
D
R = 7.1 Ω  
-
-
-
-
-
30  
2.5  
35  
45  
4
45  
G
Gate charge at threshold  
Q
Q
Q
nC  
g(th)  
≥
V
= 40 V, I  
0.1 A, V  
=0 to 1 V  
3.75  
52  
DD  
D
GS  
Gate charge at 7.0 V  
= 40 V, I = 6.4 A, V =0 to 7 V  
g(7)  
V
DD  
D
GS  
Gate charge total  
= 40 V, I = 6.4 A, V =0 to 10 V  
g(total)  
V
68  
DD  
D
GS  
Gate plateau voltage  
= 40 V, I = 6.4 A  
V
V
(plateau)  
V
-
DD  
D
Semiconductor Group  
3
07/Oct/1997  
BUZ 102S-4  
Preliminary data  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Reverse Diode  
Inverse diode continuous forward current I  
A
S
T = 25 °C  
-
-
-
-
-
-
6.4  
A
Inverse diode direct current, pulsed  
I
SM  
T = 25 °C  
-
25.6  
1.6  
A
Inverse diode forward voltage  
V
V
SD  
V
= 0 V, I = 12.8 A  
0.9  
60  
0.15  
GS  
F
Reverse recovery time  
V = 30 V, I =l di /dt = 100 A/µs  
t
ns  
µC  
rr  
90  
R
F S,  
F
Reverse recovery charge  
V = 30 V, I =l di /dt = 100 A/µs  
Q
rr  
0.23  
R
F S,  
F
Semiconductor Group  
4
07/Oct/1997  
BUZ 102S-4  
Preliminary data  
Power dissipation  
Drain current  
ƒ
ƒ
T
D = (  
P
T
I
tot = ( )  
)
C
≥
V
parameter:  
10 V  
GS  
2.6  
W
6.5  
A
RthJA
2.2  
5.5  
Ptot  
ID  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.2  
0.0  
0.5  
0.0  
0
0
20 40 60 80 100 120 140 °C 180  
T
20 40 60 80 100 120 140 °C 180  
TC  
Semiconductor Group  
5
07/Oct/1997  
BUZ 102S-4  
Preliminary data  
Typ. drain-source on-resistance  
ƒ(  
Typ. output characteristics  
ƒ(  
RDS (on)  
ID  
)
=
ID  
VDS  
)
=
t
T
parameter: p = 80 µs, j = 25 °C  
t
T
= 25 °C  
j
parameter: p = 80 µs ,  
0.09  
Ω
l
15  
P
tot = 2W  
j
a
k
h
A
13  
12  
11  
10  
9
e
d
f
i
g
V
[V]  
GS  
a
RDS (on)0.07  
ID  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
9.0  
10.0  
20.0  
b
c
d
e
f
c
0.06  
0.05  
0.04  
0.03  
0.02  
8
b
g
h
i
7
6
c
j
d
5
b
e
k
l
f
g
4
h
i
j
3
V
[V] =  
b
GS  
a
2
0.01  
0.00  
c
d
e
f
g
h
i
j
a
5.0 5.5 6.0 6.5 7.0 7.5  
8.0 9.0 10.0 20.0  
1
0
0
2
4
6
8
A
ID  
12  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
V
VDS  
5.0  
I
f V  
Typ. transfer characteristics D = (  
)
GS  
t
parameter: = 80 µs  
p
V
I
R
≥2 x  
x
DS  
D
DS(on)max  
90  
A
ID  
70  
60  
50  
40  
30  
20  
10  
0
0
1
2
3
4
5
6
7
8
V
10  
VGS  
Semiconductor Group  
6
07/Oct/1997  
BUZ 102S-4  
Preliminary data  
Drain-source on-resistance  
Gate threshold voltage  
ƒ
ƒ
T
R
T
V
DS (on) = ( )  
GS (th) = ( )  
j
j
I
V
V
V I  
, D = 90 µA  
DS  
parameter: D = 6.4 A, GS = 10 V  
parameter:  
=
GS  
0.080  
4.6  
V
98%  
Ω
4.0  
RDS (on)  
0.060  
VGS(th)  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
typ  
2%  
0.050  
0.040  
98%  
0.030  
typ  
0.020  
0.010  
0.000  
0.0  
-60  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
-20  
20  
60  
100  
°C  
Tj  
180  
Typ. capacitances  
C f V  
Forward characteristics of reverse diode  
= (  
)
ƒ
I
V
F = (  
)
DS  
SD  
V
f
= 0V, = 1MHz  
parameter:  
T , t  
parameter:  
p = 80 µs  
GS  
j
10 4  
10 2  
A
IF  
C
pF  
10 1  
Ciss  
10 3  
10 0  
T
T
T
T
j = 25 °C typ  
Coss  
j = 175 °C typ  
j = 25 °C (98%)  
j = 175 °C (98%)  
Crss  
10 2  
0
10 -1  
0.0  
5
10  
15  
20  
25  
30  
V
40  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
3.0  
VDS  
VSD  
Semiconductor Group  
7
07/Oct/1997  
BUZ 102S-4  
Preliminary data  
ƒ
E
T
j
Avalanche energy AS = ( )  
Typ. gate charge  
ƒ
V Q  
GS = (  
Gate  
I
V
parameter: D = 6.4 A, DD = 25 V  
)
Ω
R
L
I
GS = 25 , = 12 mH  
parameter: D puls = 6 A  
260  
mJ  
16  
V
220  
EAS  
VGS  
200  
180  
160  
140  
120  
100  
80  
12  
10  
8
V
V
DS max  
0,2  
0,8  
DS max  
6
4
60  
40  
2
0
20  
0
20  
40  
60  
80 100 120 140 °C 180  
Tj  
0
10  
20  
30  
40  
50 nC  
QGate  
65  
Drain-source breakdown voltage  
ƒ
V
T
(BR)DSS = ( )  
j
65  
V
V(BR)DSS  
61  
59  
57  
55  
53  
51  
49  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
Semiconductor Group  
8
07/Oct/1997  

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