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BSP77_08 [INFINEON]

Smart Low Side Power Switch; 智能低侧功率开关
BSP77_08
型号： BSP77_08
厂家： Infineon    Infineon
描述：

Smart Low Side Power Switch
智能低侧功率开关

开关
文件： 总11页 (文件大小：257K)
中文：  中文翻译
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Smart Low Side Power Switch  
HITFET BSP 77  
Product Summary  
Features  
Drain source voltage  
On-state resistance  
Nominal load current  
Clamping energy  
V
42  
100 mꢀ  
2.17  
V
S Logic Level Input  
DS  
R
S Input Protection (ESD)  
S Thermal shutdown with auto restart  
• Green product (RoHS compliant)  
S Overload protection  
DS(on)  
I
A
D(Nom)  
E
250 mJ  
AS  
4
S Short circuit protection  
S Overvoltage protection  
S Current limitation  
3
2
1
VPS05163  
S Analog driving possible  
Application  
S All kinds of resistive, inductive and capacitive loads in switching  
or linear applications  
S µC compatible power switch for 12 V DC applications  
S Replaces electromechanical relays and discrete circuits  
General Description  
ꢁ
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded  
protection functions.  
Vbb  
M
Drain  
ꢀ
HITFET  
Pin 2 and 4 (TAB)  
Current  
Limitation  
Overvoltage-  
Protection  
In  
Gate-Driving  
Unit  
Pin 1  
Over-  
temperature  
Protection  
Overload  
Protection  
Short circuit  
Protection  
ESD  
Pin 3  
Source  
Complete product spectrum and additional information http://www.infineon.com/hitfet  
Datasheet  
1
Rev. 1.3, 2008-04-14  
Smart Low Side Power Switch  
HITFET BSP 77  
Maximum Ratings at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
42  
Unit  
V
Drain source voltage  
V
DS  
Supply voltage for full short circuit protection  
V
42  
bb(SC)  
1)  
2)  
-0.2 ... +10  
Continuous input voltage  
V
IN  
2)  
Continuous input current  
I
IN  
mA  
-0.2V ? V ? 10V  
IN  
self limited  
V
< -0.2V or V > 10V  
IN  
| I | ? 2  
IN  
IN  
°C  
W
Operating temperature  
Storage temperature  
T
-40 ...+150  
-55 ... +150  
3.8  
j
T
stg  
5)  
Power dissipation  
P
tot  
T = 85 °C  
C
2)  
mJ  
V
Unclamped single pulse inductive energy  
E
250  
50  
AS  
2)3)  
Load dump protection V  
= V + V  
A
V
LoadDump  
S
LD  
V
= 0 and 10 V, td = 400 ms, R = 2 ꢀ,  
I
IN  
R = 6 ꢀ, V = 13.5 V  
A
L
2)  
Electrostatic discharge voltage (Human Body Model)  
2
kV  
V
ESD  
according to Jedec norm  
EIA/JESD22-A114-B, Section 4  
Thermal resistance  
junction - ambient:  
@ min. footprint  
R
K/W  
K/W  
thJA  
125  
72  
2
@ 6 cm cooling area  
4)  
17  
junction-soldering point:  
R
thJS  
1
For input voltages beyond these limits I has to be limited.  
IN  
2
3
not subject to production test, specified by design  
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839  
Loaddump  
4
2 (one layer, 70µm thick) copper area for drain  
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm  
connection. PCB mounted vertical without blown air.  
5
not subject to production test, calculated by R  
and R  
thJA  
ds(on)  
Datasheet  
2
Rev. 1.3, 2008-04-14  
Smart Low Side Power Switch  
HITFET BSP 77  
Electrical Characteristics  
Parameter  
Symbol  
Values  
typ. max.  
Unit  
at T = 25°C, unless otherwise specified  
j
min.  
Characteristics  
42  
-
55  
V
Drain source clamp voltage  
T = - 40 ...+ 150 °C, I = 10 mA  
V
DS(AZ)  
j
D
µA  
Off-state drain current  
I
DSS  
T = -40...+85 °C, V = 32 V, V = 0 V  
IN  
-
-
1.5  
4
8
J
DS  
T = 150 °C  
j
12  
V
Input threshold voltage  
V
IN(th)  
I = 0.6 mA, T = 25 °C  
1.3  
0.8  
-
1.7  
-
2.2  
-
D
j
I = 0.6 mA, T = 150 °C  
D
j
10  
30  
µA  
On state input current  
On-state resistance  
I
IN(on)  
R
mꢀ  
DS(on)  
V = 5 V, I = 2.17 A, T = 25 °C  
j
-
-
90  
120  
240  
IN  
D
V = 5 V, I = 2.17 A, T = 150 °C  
j
160  
IN  
D
On-state resistance  
V = 10 V, I = 2.17 A, T = 25 °C  
R
DS(on)  
-
-
70  
130  
2.8  
100  
200  
-
IN  
D
j
V = 10 V, I = 2.17 A, T = 150 °C  
j
IN  
D
5)  
2.17  
A
Nominal load current  
I
D(Nom)  
V
= 0.5 V, T < 150°C, V = 10 V, T = 85 °C  
IN  
DS  
j
A
1)  
10  
15  
20  
Current limit (active if V >2.5 V)  
DS  
I
D(lim)  
V = 10 V, V = 12 V, t = 200 µs  
m
IN  
DS  
1
Device switched on into existing short circuit (see diagram Determination of I  
D(lim)  
). If the device is in on conditi  
and a short circuit occurs, these values might be exceeded for max. 50 µs.  
5
not subject to production test, calculated by R  
and R  
thJA  
ds(on)  
Datasheet  
3
Rev. 1.3, 2008-04-14  
Smart Low Side Power Switch  
HITFET BSP 77  
Electrical Characteristics  
Parameter  
Symbol  
Values  
Unit  
at T = 25°C, unless otherwise specified  
j
min.  
typ. max.  
Dynamic Characteristics  
-
-
-
-
40  
70  
100  
100  
1.5  
1.5  
Turn-on time  
V to 90% I :  
IN D  
t
µs  
on  
R = 4.7 ꢀ, V = 0 to 10 V, V = 12 V  
bb  
L
IN  
Turn-off time  
V to 10% I :  
IN D  
t
off  
R = 4.7 ꢀ, V = 10 to 0 V, V = 12 V  
bb  
L
IN  
0.4  
0.6  
Slew rate on  
70 to 50% V :  
bb  
-dV /dt  
V/µs  
DS on  
R = 4.7 ꢀ, V = 0 to 10 V, V = 12 V  
bb  
L
IN  
Slew rate off  
50 to 70% V :  
bb  
dV /dt  
DS off  
R = 4.7 ꢀ, V = 10 to 0 V, V = 12 V  
bb  
L
IN  
1)  
Protection Functions  
150  
175  
10  
-
-
°C  
K
Thermal overload trip temperature  
T
jt  
2)  
-
-
Thermal hysteresis  
ꢂT  
jt  
Input current protection mode  
I
100  
300 µA  
IN(Prot)  
T = 150 °C  
j
2)  
250  
-
-
mJ  
Unclamped single pulse inductive energy  
E
AS  
I = 2.17 A, T = 25 °C, V = 12 V  
bb  
D
j
Inverse Diode  
V
Inverse diode forward voltage  
V
-
1
1.5  
SD  
I = 10.9 A, t = 250 µs, V = 0 V,  
IN  
F
m
t = 300 µs  
P
1
Integrated protection functions are designed to prevent IC destruction under fault conditions  
described in the data sheet. Fault conditions are considered as "outside" normal operating range.  
Protection functions are not designed for continuous repetitive operation.  
2
not subject to production test, specified by design  
Datasheet  
4
Rev. 1.3, 2008-04-14  
Smart Low Side Power Switch  
HITFET BSP 77  
Block diagram  
Inductive and overvoltage  
output clamp  
Terms  
R
L
D
V
Z
2
I
I
IN  
D
IN  
1
V
V
D
bb  
DS  
HITFET  
3
S
S
V
IN  
HITFET  
Short circuit behaviour  
Input circuit (ESD protection)  
Gate Drive  
Input  
VIN  
Source/  
Ground  
IIN  
IDS  
Tj  
Datasheet  
5
Rev. 1.3, 2008-04-14  
Smart Low Side Power Switch  
HITFET BSP 77  
1 Maximum allowable power dissipation  
2 On-state resistance  
P
P
= f(T ) resp.  
S
R
= f(T ); I =2.17A; V =10V  
j D IN  
tot  
tot  
ON  
= f(T ) @ R  
A
=72 K/W  
thJA  
10  
225  
W
mꢀ  
max.  
8
7
6
5
4
3
2
1
0
175  
max.  
150  
125  
100  
75  
typ.  
50  
6cm2  
25  
0
-50 -25  
°C  
-75 -50 -25  
0
25 50 75 100  
150  
°C  
0
25 50 75 100 125  
175  
T ;T  
S
T
A
j
3 On-state resistance  
4 Typ. input threshold voltage  
R
= f(T ); I = 2.17A; V =5V  
j D IN  
V
= f(T ); I = 0.3 mA; V = 12V  
D
ON  
IN(th)  
j
DS  
250  
2
max.  
mꢀ  
V
200  
1.6  
1.4  
1.2  
1
175  
150  
125  
100  
75  
typ.  
0.8  
0.6  
0.4  
0.2  
0
50  
25  
0
-50 -25  
°C  
0
25 50 75 100 125  
175  
°C  
-50 -25  
0
25  
50  
75 100  
150  
T
T
j
j
Datasheet  
6
Rev. 1.3, 2008-04-14  
Smart Low Side Power Switch  
HITFET BSP 77  
5 Typ. transfer characteristics  
6 Typ. short circuit current  
= f(T ); V =12V  
I =f(V ); V =12V; T  
D
=25°C  
I
j
IN  
DS  
Jstart  
D(lim)  
DS  
Parameter: V  
IN  
24  
16  
A
A
12  
10  
8
20  
18  
16  
14  
12  
6
Vin=10V  
5V  
4
2
0
1
10  
-50 -25  
V
°C  
2
3
4
5
6
7
8
10  
0
25 50 75 100 125  
175  
V
Tj  
IN  
7 Typ. output characteristics  
8 Off-state drain current  
I =f(V ); T  
DS  
=25°C  
I
= f(T )  
j
D
Jstart  
IN  
DSS  
Parameter: V  
20  
A
13  
Vin=10V  
µA  
max.  
7V  
11  
10  
9
16  
14  
12  
10  
8
6V  
5V  
4V  
8
7
6
5
typ.  
6
4
3V  
3
4
2
2
1
0
0
0
-50 -25  
V
1
2
3
4
6
°C  
0
25 50 75 100 125  
175  
V
DS  
T
j
Datasheet  
7
Rev. 1.3, 2008-04-14  
Smart Low Side Power Switch  
HITFET BSP 77  
9 Typ. overload current  
10 Typ. transient thermal impedance  
2
=f(t ) @ 6 cm cooling area  
I
= f(t), V =12 V, no heatsink  
bb  
Z
thJA  
D(lim)  
p
Parameter: T  
Parameter: D=t /T  
p
10 2  
jstart  
25  
K/W  
D=0.5  
A
0.2  
10 1  
-40°C  
25°C  
0.1  
0.05  
15  
10  
5
0.02  
10 0  
0.01  
+150°C  
10 -1  
85°C  
Single pulse  
10 -2  
0
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1  
10 3  
s
ms  
1
2
3
5
t
p
t
11 Determination of I  
D(lim)  
I
= f(t); t = 200µs  
m
D(lim)  
Parameter: T  
Jstart  
25  
A
-40°C  
25°C  
15  
10  
5
85°C  
150°C  
0
0
ms  
0.1  
0.2  
0.3  
0.4  
0.6  
t
Datasheet  
8
Rev. 1.3, 2008-04-14  
Smart Low Side Power Switch  
HITFET BSP 77  
Package Outlines  
1
Package Outlines  
0ꢀ1  
1ꢀ6  
0ꢀ2  
6ꢀ5  
A
0ꢀ1  
0ꢀ1 MAXꢀ  
3
B
4
3
1
2
2ꢀ3  
0ꢀ1  
0ꢀ28  
0ꢀ7  
0ꢀ0  
4
4ꢀ6  
M
0ꢀ25  
A
M
0ꢀ25  
B
GPS05560  
Figure 1  
PG-SOT223-4 (Plastic Green Small Outline Transistor Package)  
Green Product (RoHS compliant)  
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with  
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-  
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).  
Please specify the package needed (e.g. green package) when placing an order  
You can find all of our packages, sorts of packing and others in our  
Infineon Internet Page “Products”: http://www.infineon.com/products.  
Dimensions in mm  
Datasheet  
9
Rev. 1.3, 2008-04-14  
Smart Low Side Power Switch  
HITFET BSP 77  
Revision History  
2
Revision History  
Version  
Rev. 1.3  
Rev. 1.2  
Date  
2008-04-14  
2007-03-28  
Changes  
Package information updated to SOT223-4  
released automotive green version  
Package parameter (humidity and climatic) removed in Maximum ratings  
AEC icon added  
RoHS icon added  
Green product (RoHS-compliant) added to the feature list  
Package information updated to green  
Green explanation added  
Rev. 1.1  
2004-03-05  
released production version  
Datasheet  
10  
Rev. 1.3, 2008-04-14  
Edition 2008-04-14  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© Infineon Technologies AG 2008.  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or  
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values  
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby  
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in  
question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  

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