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BSP78 [INFINEON]

Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal shutdown with auto restart); 智能低压侧电源开关（逻辑电平输入输入ESD保护与自动重启动热关机）
BSP78
型号： BSP78
厂家： Infineon    Infineon
描述：

Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal shutdown with auto restart)
智能低压侧电源开关（逻辑电平输入输入ESD保护与自动重启动热关机）

外围驱动器 驱动程序和接口 开关 接口集成电路 电源开关 光电二极管 PC
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HITFETÒBSP 78  
Preliminary data  
Smart Lowside Power Switch  
Features  
Product Summary  
· Logic Level Input  
· Input Protection (ESD)  
Drain source voltage  
V
DS  
40  
50  
3
V
On-state resistance  
Nominal load current  
Clamping energy  
R
mW  
A
DS(on)  
·
Thermal shutdown with  
auto restart  
I
D(Nom)  
E
500 mJ  
AS  
·
Overload protection  
· Short circuit protection  
· Overvoltage protection  
· Current limitation  
· Analog driving possible  
Application  
· All kinds of resistive, inductive and capacitive loads in switching or linear  
applications  
· µC compatible power switch for 12 V and 24 V DC applications  
· Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded  
protection functions.  
Ò
Pin  
1
Symbol  
IN  
Function  
Input  
2
DRAIN  
SOURCE  
DRAIN  
Output to the load  
Ground  
3
TAB  
Output to the load  
Semiconductor Group  
Page 1  
Jan-15-1998  
Preliminary data  
BSP 78  
Block Diagram  
V
b b  
+
LO A D  
M
Drain  
O v e rv o lt a g e  
C u rre n t  
p ro t e c t io n  
lim it a t io n  
G a t e -D riv in g  
Un it  
IN  
O v e r-  
t e m p e ra t u re  
p ro t e c t io n  
O v e rlo a d  
p ro t e c t io n  
Sh o rt c irc u it  
ESD  
p ro t e c t io n  
Source  
â
H ITFET  
Semiconductor Group  
Page 2  
Jan-15-1998  
Preliminary data  
Maximum Ratings at T = 25°C, unless otherwise specified  
BSP 78  
j
Parameter  
Symbol  
Value  
40  
Unit  
Drain source voltage  
V
V
DS  
V
40  
DS(SC)  
Drain source voltage for  
short circuit protection  
Continuous input voltage  
V
V
-0.2 ... +10  
IN  
V
-0.2 ...  
Peak input voltage (I £ 2 mA)  
IN  
IN(peak)  
DS  
Operating temperature  
Storage temperature  
T
-40 ...+150  
-55 ...+150  
1.7  
°C  
j
T
stg  
tot  
T
P
Power dissipation, C = 85 °C  
W
F)  
Unclamped single pulse inductive energy  
E
500  
mJ  
kV  
AS  
lectro tatic ischarge voltage (Human Body Model) V  
2000  
E
s
d
ESD  
according to MIL STD 883D, method 3015.7 and  
EOS/ESD assn. standard S5.1 - 1993  
DIN humidity category, DIN 40 040  
E
IEC climatic category; DIN IEC 68-1  
40/150/56  
Thermal resistance  
junction - ambient:  
@ min. footprint  
R
K/W  
K/W  
thJA  
125  
72  
2
F)  
@ 6 cm cooling area  
junction-soldering point:  
R
17  
thJS  
1
not tested, specified by design  
2
Device on 50mm+50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Drain  
connection. PCB is vertical without blown air.  
Semiconductor Group  
Page 3  
Jan-15-1998  
Preliminary data  
BSP 78  
Electrical Characteristics  
Parameter  
Symbol  
Values  
Unit  
at T = 25°C, unless otherwise specified  
min.  
40  
-
typ. max.  
j
Characteristics  
Drain source clamp voltage  
V
-
55  
V
DS(AZ)  
T = - 40 ...+ 150, I  
= 10 mA  
j
mess  
Off-state drain currentT = -40 ... +150°C  
I
-
10 µA  
j
DSS  
V
V = 0 V, DS = 32 V  
IN  
Input treshold voltage  
V
1.3  
-
1.7  
10  
2.2  
V
IN(th)  
I = 0.7 mA  
D
On state input current  
On-state resistance  
I
30 µA  
mW  
IN(on)  
R
DS(on)  
T
I = 3 A, V = 5 V, j = 25 °C  
-
-
45  
75  
60  
D
IN  
T
I = 3 A, V = 5 V, j = 150 °C  
120  
D
IN  
On-state resistance  
R
DS(on)  
T
I = 3 A, V = 10 V, j = 25 °C  
-
-
35  
65  
50  
D
IN  
T
I = 3 A, V = 10 V, j = 150 °C  
100  
D
IN  
Nominal load current  
I
3
-
-
A
A
D(Nom)  
V
T
DS = 0.5 V, T = 85 °C, j < 150°C,  
S
V = 10 V  
IN  
V
Current limit (active if DS>2.5 V)  
I
16  
24  
32  
D(lim)  
V
V = 10 V, DS = 12 V  
IN  
Dynamic Characteristics  
µs  
Turn-on time  
V to 90% I :  
t
on  
-
-
-
-
60  
60  
150  
150  
1
IN  
D
R = 5 W, V = 0 to 10 V, V = 12 V  
L
IN  
bb  
Turn-off time  
V to 10% I :  
t
off  
IN  
D
R = 5 W, V = 10 to 0 V, V = 12 V  
L
IN  
bb  
Slew rate on  
70 to 50% V :  
0.4  
0.7  
V/µs  
-dV /dt  
bb  
DS on  
R = 5 W, V = 0 to 10 V, V = 12 V  
L
IN  
bb  
Slew rate off  
50 to 70% V :  
dV /dt  
1
bb  
DS off  
R = 5 W, V = 10 to 0 V, V = 12 V  
L
IN  
bb  
Semiconductor Group  
Page 4  
Jan-15-1998  
Preliminary data  
BSP 78  
Electrical Characteristics  
Parameter  
Symbol  
Values  
Unit  
at T = 25°C, unless otherwise specified  
min.  
typ. max.  
j
Protection Functions  
Thermal overload trip temperature  
Thermal hysteresis  
T
150  
165  
10  
-
-
-
°C  
K
jt  
DT  
-
-
jt  
Input current protection mode  
Unclamped single pulse inductive energy  
I
300 µA  
IN(Prot)  
F)  
E
mJ  
AS  
T
I = 3 A, j = 25 °C, V = 12 V  
500  
300  
-
-
-
-
D
bb  
T
I = 3 A, j = 150 °C, V = 12 V  
D
bb  
Inverse Diode  
Continuous source drain voltage  
V
-
1.1  
-
V
SD  
V = 0 V, -I = 5*3 A, t = 300 µs  
IN  
D
P
1
not tested, specified by design  
Semiconductor Group  
Page 5  
Jan-15-1998  
Preliminary data  
BSP 78  
Block diagram  
Inductive and overvoltage  
Terms  
output clamp  
Short circuit behaviour  
Input circuit (ESD protection)  
VIN  
Gate Drive  
Input  
IIN  
t
t
ID  
Source/  
Ground  
Input is not designed for DC  
current > 2 mA  
t
Tj  
Thermal hysteresis  
t
Semiconductor Group  
Page 6  
Jan-15-1998  
Preliminary data  
Maximum allowable power dissipation  
BSP 78  
On-state resistance  
P
= f(T )  
I =3A; V =10V  
= f(T );  
D
j
R
tot  
C
IN  
ON  
1.7  
W
120  
mW  
100  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
max.  
P
R
tot  
DS(on)  
80  
70  
60  
50  
40  
30  
20  
10  
0
typ.  
0.0  
°C  
-50 -25  
0
25  
50  
75  
100  
150  
°C  
-40 -15 10 35 60 85 110 135  
185  
T
T
j
C
On-state resistance  
Typ. input threshold voltage  
I =3A; V =5V  
= f(T );  
D
j
R
I =-; V =12V  
V
= f(T );  
IN  
ON  
D
DS  
IN(th)  
j
140  
mW  
2.0  
V
120  
110  
max.  
R
V
DS(on)  
100  
IN(th)  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.2  
typ.  
1.0  
0.8  
0.5  
0.2  
0.0  
°C  
-40 -15 10 35 60 85 110 135  
185  
°C  
-50 -25  
0
25  
50  
75  
100  
150  
T
j
T
j
Semiconductor Group  
Page 7  
Jan-15-1998  
Preliminary data  
BSP 78  
Typ. transfer characteristics  
Typ. short circuit current  
V =12V  
V =12V; T=25°C  
I = f(V );  
I
= f(Tj);  
DS  
D(SC)  
DS  
j
D
IN  
Parameter: V  
IN  
30  
A
30  
A
I
I
D
D
20  
15  
10  
5
20  
15  
10  
5
Vin=10V  
5V  
0
0
V
°C  
0
1
2
3
4
5
6
7
8
10  
-40 -15 10 35 60 85 110 135  
185  
V
T
j
IN  
Typ. output characteristic  
T =25°C  
Typ. overload current  
I
= f( )  
D(lim)  
t , V =12 V, no heatsink  
I = f(V );  
j
bb  
D
DS  
Parameter: V  
Parameter: T  
IN  
jstart  
35  
40  
10V  
A
A
-40°C  
7V  
0  
I
I
D(lim)  
6V  
5V  
D
25  
25  
20  
15  
10  
5
4V  
20  
15  
10  
5
25°C  
Vin=3V  
150°C  
85°C  
1.5  
0
0
V
s
0
1
2
3
4
6
0.0  
0.5  
1.0  
2.0  
3.0  
t
V
DS  
Semiconductor Group  
Page 8  
Jan-15-1998  
Preliminary data  
BSP 78  
Transient thermal impendance  
= f(t )  
Typ. off-state drain current  
Z
I
T
= f( )  
thJC  
P
DSS  
j
Parameter: D=t /T  
P
10 2  
10  
max.  
K/W  
D=0.5  
µA  
0.2  
0.1  
10 1  
8
7
6
5
4
3
2
1
Z
I
thJA  
0.05  
DSS  
0.02  
0.01  
10 0  
10 -1  
10 -2  
10 -3  
0
typ.  
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1  
10 3  
s
°C  
-40 -15 10 35 60 85 110 135  
185  
t
T
j
P
Semiconductor Group  
Page 9  
Jan-15-1998  
Preliminary data  
BSP 78  
Package and ordering code  
all dimensions in mm  
Ordering code: Q67060-S7203-A2  
Semiconductor Group  
Page 10  
Jan-15-1998  

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