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BSP88_09 [INFINEON]

SIPMOS Small-Signal-Transistor; SIPMOS小信号三极管
BSP88_09
型号： BSP88_09
厂家： Infineon    Infineon
描述：

SIPMOS Small-Signal-Transistor
SIPMOS小信号三极管
文件： 总8页 (文件大小：376K)
中文：  中文翻译
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Rev. 2.1  
BSP88  
ꢀ
SIPMOS ꢁSmall-Signal-Transistor  
Product Summary  
Feature  
V
240  
6
V
ꢀ
A
DS  
S N-Channel  
S Enhancement mode  
S Logic Level  
R
DS(on)  
I
0.35  
D
PG-SOT223  
S dv/dt rated  
Pb-free lead plating; RoHS compliant  
4
•
•
2.8V rated  
3
x Qualified according to AEC Q101  
2
1
VPS05163  
Marking Packaging  
BSP88  
Non dry  
Type  
BSP88  
Package  
PG-SOT223  
Tape and Reel Information  
L6327: 1000 pcs/reel  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
0.35  
0.28  
1.4  
A
T =70°C  
A
Pulsed drain current  
I
D puls  
T =25°C  
A
6
kV/µs  
V
Reverse diode dv/dt  
dv/dt  
I =0.35A, V =192V, di/dt=200A/µs, T  
=150°C  
S
DS jmax  
Gate source voltage  
ESD class (JESD22-A114-HBM)  
Power dissipation  
V
P
±20  
1A (>250V, <500V)  
1.8  
GS  
tot  
W
T =25°C  
A
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T
,
T
-55... +150  
55/150/56  
j
stg  
Page 1  
2009-08-18  
Rev. 2.1  
BSP88  
Thermal Characteristics  
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
Characteristics  
-
-
25  
K/W  
Thermal resistance, junction - soldering point  
(Pin 4)  
SMD version, device on PCB:  
R
R
thJS  
thJA  
@ min. footprint  
-
-
-
-
115  
70  
2
@ 6 cm cooling area 1)  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
Unit  
min.  
240  
0.6  
typ. max.  
Static Characteristics  
Drain-source breakdown voltage  
-
-
V
V
V
(BR)DSS  
GS(th)  
V
=0, I =250µA  
GS  
D
1
1.4  
Gate threshold voltage, V = V  
GS  
DS  
I =108µA  
D
µA  
Zero gate voltage drain current  
I
DSS  
V
=240V, V =0, T =25°C  
-
-
-
-
-
1
0.1  
10  
10  
DS  
DS  
GS  
j
V
=240V, V =0, T =150°C  
GS  
j
nA  
Gate-source leakage current  
I
GSS  
V
=20V, V =0  
GS DS  
Drain-source on-state resistance  
R
-
-
-
4.9  
4.6  
4
15  
7.5  
6
ꢀ
DS(on)  
DS(on)  
DS(on)  
V
=2.8V, I =0.014A  
GS  
D
Drain-source on-state resistance  
R
R
V
=4.5V, I =0.32A  
GS  
D
Drain-source on-state resistance  
V
=10V, I =0.35A  
GS  
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical without blown air.  
Page 2  
2009-08-18  
Rev. 2.1  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
BSP88  
j
Parameter  
Symbol  
Conditions  
Values  
Unit  
min.  
typ. max.  
Dynamic Characteristics  
V
O2*I *R ,  
DS(on)max  
0.19  
0.38  
-
S
Transconductance  
g
DS  
D
fs  
I =0.28A  
D
V
=0, V =25V,  
GS DS  
-
-
-
-
-
-
-
76  
12  
6
3.6  
3.5  
17.9  
18.9  
95  
15  
9
5.4 ns  
5.2  
pF  
Input capacitance  
Output capacitance  
Reverse transfer capacitance C  
Turn-on delay time  
Rise time  
Turn-off delay time  
Fall time  
C
C
iss  
f=1MHz  
oss  
rss  
V
=120V, V =4.5V,  
DD GS  
t
d(on)  
I =0.35A, R =15ꢀ  
t
D
G
r
26.8  
28.3  
t
d(off)  
t
f
Gate Charge Characteristics  
Gate to source charge  
Gate to drain charge  
V
=192V, I =0.35A  
-
-
-
0.2  
2
4.5  
0.3 nC  
3
6.8  
Q
Q
Q
DD  
D
gs  
gd  
g
V
V
=192V, I =0.35A,  
Gate charge total  
DD  
GS  
D
=0 to 10V  
V
=192V, I = 0.35 A  
-
-
2.7  
-
-
V
Gate plateau voltage  
V
DD  
D
(plateau)  
Reverse Diode  
Inverse diode continuous  
forward current  
Inv. diode direct current, pulsed I  
Inverse diode forward voltage V  
T =25°C  
0.35 A  
1.4  
1.2  
82  
I
S
A
-
-
-
-
-
SM  
V
=0, I = I  
GS  
0.86  
66  
119  
V
ns  
F
S
SD  
t
rr  
Q
rr  
V =120V, I =l ,  
F S  
Reverse recovery time  
Reverse recovery charge  
R
di /dt=100A/µs  
149 nC  
F
Page 3  
2009-08-18  
Rev. 2.1  
BSP88  
1 Power dissipation  
2 Drain current  
I = f (T )  
P
= f (T )  
tot  
A
D
A
parameter: V O 10 V  
GS  
BSP88  
BSP88  
1.9  
W
0.38  
A
1.6  
1.4  
1.2  
1
0.32  
0.28  
0.24  
0.2  
0.8  
0.6  
0.4  
0.2  
0
0.16  
0.12  
0.08  
0.04  
0
0
20  
40  
60  
80 100 120  
160  
0
20  
40  
60  
80 100 120  
160  
°C  
T
°C  
T
A
A
3 Safe operating area  
I = f ( V  
4 Transient thermal impedance  
Z = f (t )  
thJA  
)
D
DS  
p
parameter : D = 0 , T = 25 °C  
parameter : D = t /T  
A
p
10 1  
10 2  
BSP88  
BSP88  
A
K/W  
10 1  
t
= 160.0µs  
p
10 0  
1 ms  
10 ms  
10 -1  
10 -2  
10 -3  
10 0  
D = 0.50  
0.20  
0.10  
0.05  
single pulse  
10 -1  
0.02  
DC  
0.01  
10 -2  
10 0  
10 1  
10 2  
10 3  
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2  
10 4  
V
s
V
t
DS  
p
Page 4  
2009-08-18  
Rev. 2.1  
BSP88  
5 Typ. output characteristic  
I = f (V )  
6 Typ. drain-source on resistance  
= f (I )  
R
D
DS  
DS(on)  
D
parameter: T = 25 °C, V  
parameter: Tj = 25 °C, V  
j
GS  
GS  
9
0.64  
3.4V  
3.8V  
4.4V  
5V  
2.6V  
3.2V  
ꢀ
3.2V  
A
3.4V  
3.8V  
4V  
6V  
7
6
5
4
3
2
1
0
0.48  
7V  
4.4V  
10V  
5V  
6V  
0.4  
7V  
10V  
2.6V  
0.32  
0.24  
0.16  
0.08  
0
0
0.5  
1
1.5  
2
2.5  
3
4
0
0.08 0.16 0.24 0.32 0.4 0.48  
0.64  
V
A
V
I
DS  
D
7 Typ. transfer characteristics  
8 Typ. forward transconductance  
g = f(I )  
I = f ( V ); V O 2 x I x R  
D
GS  
DS  
D
DS(on)max  
fs  
D
parameter: Tj = 25 °C  
parameter: Tj = 25 °C  
0.64  
0.6  
A
S
0.48  
0.4  
0.4  
0.3  
0.2  
0.1  
0
0.32  
0.24  
0.16  
0.08  
0
0
0.5  
1
1.5  
2
2.5  
3.5  
GS  
0
0.08 0.16 0.24 0.32 0.4 0.48  
0.64  
V
A
V
I
D
Page 5  
2009-08-18  
Rev. 2.1  
BSP88  
9 Drain-source on-state resistance  
= f (T )  
10 Typ. gate threshold voltage  
V = f (T )  
GS(th)  
parameter: V = V ; I = 108 µA  
GS DS D  
R
DS(on)  
j
j
parameter : I = 0.35 A, V = 10 V  
D
GS  
BSP88  
1.8  
30  
ꢀ
V
98%  
24  
22  
20  
18  
16  
14  
12  
10  
8
1.4  
1.2  
1
typ.  
2%  
0.8  
0.6  
0.4  
0.2  
0
98%  
6
typ  
4
2
0
°C  
°C  
-60  
-20  
20  
60  
100  
180  
-60  
-20  
20  
60  
100  
160  
T
T
j
j
11 Typ. capacitances  
C = f (V )  
12 Forward character. of reverse diode  
I = f (V )  
DS  
F
SD  
parameter: V =0, f=1 MHz, Tj = 25 °C  
parameter: T  
GS  
j
10 3  
10 1  
BSP88  
pF  
A
Ciss  
10 2  
10 0  
Coss  
10 1  
10 -1  
Tj = 25 °C typ  
Tj = 150 °C typ  
Tj = 25 °C (98%)  
Tj = 150 °C (98%)  
Crss  
10 0  
10 -2  
V
0
5
10  
15  
20  
30  
DS  
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
3
V
V
V
SD  
Page 6  
2009-08-18  
Rev. 2.1  
BSP88  
13 Typ. gate charge  
= f (Q ); parameter: V  
14 Drain-source breakdown voltage  
V
,
V
= f (T )  
GS  
G
DS  
(BR)DSS  
j
I = 0.35 A pulsed, T = 25 °C  
D
j
BSP88  
BSP88  
16  
V
291  
V
276  
271  
266  
261  
256  
251  
246  
241  
236  
231  
226  
221  
216  
12  
10  
8
0.2 VDS max  
0.5 VDS max  
0.8 VDS max  
6
4
2
0
nC  
0
1
2
3
4
5
7
-60  
-20  
20  
60  
100  
180  
°C  
Q
T
j
G
Page 7  
2009-08-18  
Rev. 2.1  
BSP88  
Page 8  
2009-08-18  

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