首页 |元器件品牌

BSP89E6327 [INFINEON]

Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4;
BSP89E6327
型号： BSP89E6327
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4

脉冲 光电二极管 晶体管
文件： 总8页 (文件大小：216K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Rev. 1.21  
BSP89  
ꢀ
SIPMOS ꢁSmall-Signal-Transistor  
Product Summary  
Feature  
V
240  
6
V
ꢀ
A
DS  
S N-Channel  
S Enhancement mode  
S Logic Level  
R
DS(on)  
I
0.35  
D
PG-SOT-223  
S dv/dt rated  
Pb-free lead plating; RoHS compliant  
•
4
3
2
1
VPS05163  
Type  
BSP89  
BSP89  
Package  
P-SOT-223  
PG-SOT-223  
Tape and Reel Information  
E6327: 1000 pcs/reel  
L6327: 1000 pcs/reel  
Marking  
BSP89  
BSP89  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
0.35  
0.28  
1.4  
A
T =70°C  
A
Pulsed drain current  
I
D puls  
T =25°C  
A
6
kV/µs  
V
Reverse diode dv/dt  
dv/dt  
I =0.35A, V =192V, di/dt=200A/µs, T  
=150°C  
S
DS jmax  
Gate source voltage  
ESD Sensitivity (HBM) as per MIL-STD 883  
Power dissipation  
V
P
±20  
Class 1  
1.8  
GS  
tot  
W
T =25°C  
A
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T
,
T
st
g  
-55... +150  
55/150/56  
j
Page 1  
2006-09-27  
Rev. 1.21  
BSP89  
Thermal Characteristics  
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
Characteristics  
-
-
25  
K/W  
Thermal resistance, junction - soldering point  
(Pin 4)  
SMD version, device on PCB:  
R
R
thJS  
thJA  
@ min. footprint  
-
-
-
-
115  
70  
2
@ 6 cm cooling area 1)  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
Unit  
min.  
240  
0.8  
typ. max.  
Static Characteristics  
Drain-source breakdown voltage  
-
-
V
V
V
(BR)DSS  
GS(th)  
V
=0, I =250µA  
GS  
D
1.4  
1.8  
Gate threshold voltage, V = V  
GS  
DS  
I =108µA  
D
µA  
Zero gate voltage drain current  
I
DSS  
V
=240V, V =0, T =25°C  
-
-
-
-
-
-
0.1  
10  
10  
DS  
DS  
GS  
j
V
=240V, V =0, T =150°C  
GS  
j
nA  
Gate-source leakage current  
I
GSS  
V
=20V, V =0  
GS DS  
-
-
4.9  
4.2  
7.5  
6
Drain-source on-state resistance  
R
ꢀ
DS(on)  
DS(on)  
V
=4.5V, I =0.32A  
GS  
D
Drain-source on-state resistance  
R
V
=10V, I =0.35A  
GS  
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical without blown air.  
Page 2  
2006-09-27  
Rev. 1.21  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
BSP89  
j
Parameter  
Symbol  
Conditions  
Values  
Unit  
min.  
typ. max.  
Dynamic Characteristics  
V
O2*I *R ,  
DS(on)max  
0.18  
0.36  
-
S
Transconductance  
g
DS  
D
fs  
I =0.28A  
D
V
=0, V =25V,  
GS DS  
-
-
-
-
-
-
-
80  
11.2  
5.2  
4
3.5  
15.9  
18.4  
140 pF  
16.8  
7.8  
Input capacitance  
Output capacitance  
Reverse transfer capacitance C  
Turn-on delay time  
Rise time  
Turn-off delay time  
Fall time  
C
C
iss  
f=1MHz  
oss  
rss  
V
=120V, V =10V,  
DD GS  
6
ns  
t
d(on)  
I =0.35A, R =6ꢀ  
5.3  
23.8  
27.6  
t
D
G
r
t
d(off)  
t
f
Gate Charge Characteristics  
Gate to source charge  
Gate to drain charge  
V
=192V, I =0.35A  
-
-
-
0.2  
2
4.3  
0.3 nC  
3
6.4  
Q
Q
Q
DD  
D
gs  
gd  
g
V
V
=192V, I =0.35A,  
Gate charge total  
DD  
GS  
D
=0 to 10V  
V
=192V, I = 0.35 A  
-
-
3.1  
-
-
V
Gate plateau voltage  
V
DD  
D
(plateau)  
Reverse Diode  
Inverse diode continuous  
forward current  
Inv. diode direct current, pulsed I  
Inverse diode forward voltage V  
T =25°C  
0.35 A  
1.4  
1.2  
100 ns  
184 nC  
I
S
A
-
-
-
-
-
SM  
V
=0, I = I  
GS  
0.85  
67  
123  
V
F
S
SD  
t
rr  
Q
rr  
V =120V, I =l ,  
F S  
Reverse recovery time  
Reverse recovery charge  
R
di /dt=100A/µs  
F
Page 3  
2006-09-27  
Rev. 1.21  
BSP89  
1 Power dissipation  
2 Drain current  
I = f (T )  
P
= f (T )  
tot  
A
D
A
parameter: V O 10 V  
GS  
BSP89  
BSP89  
1.9  
W
0.38  
A
1.6  
1.4  
1.2  
1
0.32  
0.28  
0.24  
0.2  
0.8  
0.6  
0.4  
0.2  
0
0.16  
0.12  
0.08  
0.04  
0
0
20  
40  
60  
80 100 120  
160  
0
20  
40  
60  
80 100 120  
160  
°C  
T
°C  
T
A
A
3 Safe operating area  
I = f ( V  
4 Transient thermal impedance  
Z = f (t )  
thJA  
)
D
DS  
p
parameter : D = 0 , T = 25 °C  
parameter : D = t /T  
A
p
10 1  
10 2  
BSP89  
BSP89  
A
K/W  
10 1  
t
= 160.0µs  
p
10 0  
1 ms  
10 ms  
10 -1  
10 -2  
10 -3  
10 0  
D = 0.50  
0.20  
0.10  
0.05  
single pulse  
10 -1  
0.02  
DC  
0.01  
10 -2  
10 0  
10 1  
10 2  
10 3  
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2  
10 4  
V
s
V
t
DS  
p
Page 4  
2006-09-27  
Rev. 1.21  
BSP89  
5 Typ. output characteristic  
I = f (V )  
6 Typ. drain-source on resistance  
= f (I )  
R
D
DS  
DS(on)  
D
parameter: T = 25 °C, V  
parameter: Tj = 25 °C, V  
j
GS  
GS  
9
0.6  
ꢀ
A
7
6
5
4
3
2
1
0
0.4  
0.3  
0.2  
0.1  
0
3V  
3V  
3.4V  
3.6V  
4.2V  
4.6V  
5V  
3.4V  
3.6V  
4.2V  
4.6V  
5V  
6V  
6V  
10V  
10V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
5
0
0.1  
0.2  
0.3  
0.4  
0.6  
V
A
V
I
D
DS  
7 Typ. transfer characteristics  
8 Typ. forward transconductance  
g = f(I )  
I = f ( V ); V O 2 x I x R  
D
GS  
DS  
D
DS(on)max  
fs  
D
parameter: Tj = 25 °C  
parameter: Tj = 25 °C  
0.6  
0.6  
A
S
0.4  
0.3  
0.2  
0.1  
0
0.4  
0.3  
0.2  
0.1  
0
0
0.5  
1
1.5  
2
2.5  
3.5  
GS  
0
0.1  
0.2  
0.3  
0.4  
0.6  
V
A
V
I
D
Page 5  
2006-09-27  
Rev. 1.21  
BSP89  
9 Drain-source on-state resistance  
= f (T )  
10 Typ. gate threshold voltage  
V = f (T )  
GS(th)  
parameter: V = V ; I =108µA  
GS DS D  
R
DS(on)  
j
j
parameter : I = 0.35 A, V = 10 V  
D
GS  
BSP89  
2.2  
V
30  
ꢀ
98%  
1.8  
1.6  
1.4  
1.2  
1
24  
22  
20  
18  
16  
14  
12  
10  
8
typ.  
2%  
0.8  
0.6  
0.4  
0.2  
0
98%  
6
typ  
4
2
0
°C  
°C  
-60  
-20  
20  
60  
100  
180  
-60  
-20  
20  
60  
100  
160  
T
T
j
j
11 Typ. capacitances  
C = f (V )  
12 Forward character. of reverse diode  
I = f (V )  
DS  
F
SD  
parameter: V =0, f=1 MHz, Tj = 25 °C  
parameter: T  
GS  
j
10 3  
10 1  
BSP89  
pF  
A
Ciss  
10 2  
10 0  
Coss  
10 1  
10 -1  
Crss  
Tj = 25 °C typ  
Tj = 150 °C typ  
Tj = 25 °C (98%)  
Tj = 150 °C (98%)  
10 0  
10 -2  
V
0
5
10  
15  
20  
30  
DS  
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
3
V
V
V
SD  
Page 6  
2006-09-27  
Rev. 1.21  
BSP89  
13 Typ. gate charge  
= f (Q ); parameter: V  
14 Drain-source breakdown voltage  
V
,
V
= f (T )  
GS  
G
DS  
(BR)DSS  
j
I = 0.35 A pulsed, T = 25 °C  
D
j
BSP89  
BSP89  
16  
V
291  
V
276  
271  
266  
261  
256  
251  
246  
241  
236  
231  
226  
221  
216  
12  
10  
8
0.2 VDS max  
0.5 VDS max  
0.8 VDS max  
6
4
2
0
nC  
0
1
2
3
4
5
6.5  
-60  
-20  
20  
60  
100  
180  
°C  
Q
T
j
G
Page 7  
2006-09-27  
Rev. 1.21  
BSP89  
Published by  
Infineon Technologies AG,  
Bereichs Kommunikation  
St.-Martin-Strasse 53,  
D-81541 München  
© Infineon Technologies AG 1999  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as warranted  
characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,  
regarding circuits, descriptions and charts stated herein.  
Infineon Technologies is an approved CECC manufacturer.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express  
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to  
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device  
or system Life support devices or systems are intended to be implanted in the human body, or to support  
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health  
of the user or other persons may be endangered.  
Page 8  
2006-09-27  

相关型号：

BSP89E6327T

 Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-4
INFINEON

BSP89H6327

 Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON

BSP89H6327XTSA1

 Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON

BSP89T/R

 TRANSISTOR 7.5 ohm, Si, POWER, FET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power
NXP

BSP89TRL

 TRANSISTOR 350 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP

BSP89TRL13

 TRANSISTOR 350 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
NXP

BSP89_09

 SIPMOS Small-Signal-Transistor
INFINEON

BSP92

 P-channel enhancement mode vertical D-MOS transistor
NXP

BSP92

 SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
INFINEON

BSP92-T

 TRANSISTOR 0.18 A, 200 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP

BSP92-TAPE-13

 TRANSISTOR 0.18 A, 240 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP

BSP92-TAPE-7

 TRANSISTOR 0.18 A, 240 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP
©2020 ICPDF网 联系我们和版权申明