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BSP89 [INFINEON]

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level); SIPMOS小信号晶体管（ N沟道增强模式的逻辑电平）
BSP89
型号： BSP89
厂家： Infineon    Infineon
描述：

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
SIPMOS小信号晶体管（ N沟道增强模式的逻辑电平）

晶体 晶体管 开关 光电二极管
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中文：  中文翻译
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BSP 89  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
• Logic Level  
• V  
= 0.8...2.0V  
GS(th)  
Pin 1 Pin 2 Pin 3 Pin 4  
G
D
S
D
Type  
V
I
R
Package  
Marking  
DS  
D
DS(on)  
Ω
BSP 89  
240 V  
0.36 A  
6
SOT-223  
BSP 89  
Type  
Ordering Code  
Tape and Reel Information  
BSP 89  
Q67000-S652  
E6327  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Drain source voltage  
Drain-gate voltage  
V
V
240  
V
DS  
DGR  
Ω
R
= 20 k  
240  
GS  
±
14  
Gate source voltage  
V
V
GS  
Gate-source peak voltage,aperiodic  
Continuous drain current  
± 20  
0.36  
1.44  
1.7  
gs  
I
A
D
T = 29 °C  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 °C  
A
Power dissipation  
P
W
tot  
T = 25 °C  
A
Semiconductor Group  
1
Sep-12-1996  
BSP 89  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Chip or operating temperature  
Storage temperature  
T
T
-55 ... + 150 °C  
-55 ... + 150  
j
stg  
Thermal resistance, chip to ambient air  
Therminal resistance, junction-soldering point 1)  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
R
≤ 72  
K/W  
thJA  
thJS  
≤
R
12  
E
55 / 150 / 56  
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Static Characteristics  
Drain- source breakdown voltage  
V
V
V
(BR)DSS  
GS(th)  
DSS  
V
= 0 V, I = 0.25 mA, T = 25 °C  
240  
0.8  
-
-
GS  
D
j
Gate threshold voltage  
=
V
V
I = 1 mA  
1.5  
2
GS DS, D  
Zero gate voltage drain current  
I
µA  
V
V
V
= 240 V, V = 0 V, T = 25 °C  
-
-
-
0.1  
10  
-
1
DS  
DS  
DS  
GS  
j
= 240 V, V = 0 V, T = 125 °C  
100  
0.2  
GS  
j
= 60 V, V = 0 V, T = 25 °C  
GS  
j
Gate-source leakage current  
= 20 V, V = 0 V  
I
nA  
GSS  
V
-
10  
100  
GS  
DS  
Ω
Drain-Source on-state resistance  
R
DS(on)  
V
V
= 10 V, I = 0.36 A  
-
-
3.5  
4
6
GS  
GS  
D
= 4.5 V, I = 0.36 A  
10  
D
Semiconductor Group  
2
Sep-12-1996  
BSP 89  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
≥
V
2 I  
R I = 0.36 A  
0.14  
0.36  
80  
15  
8
-
DS  
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
pF  
iss  
V
-
-
-
110  
25  
12  
GS  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
oss  
V
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
rss  
V
GS  
DS  
Turn-on delay time  
= 30 V, V = 10 V, I = 0.28 A  
t
t
t
t
ns  
d(on)  
V
DD  
GS  
D
Ω
R
= 50  
-
-
-
-
5
8
GS  
Rise time  
= 30 V, V = 10 V, I = 0.28 A  
r
V
DD  
GS  
D
Ω
R
= 50  
10  
30  
20  
15  
40  
27  
GS  
Turn-off delay time  
= 30 V, V = 10 V, I = 0.28 A  
d(off)  
V
DD  
GS  
D
R
= 50 Ω  
GS  
Fall time  
= 30 V, V = 10 V, I = 0.28 A  
f
V
DD  
GS  
D
R
= 50 Ω  
GS  
Semiconductor Group  
3
Sep-12-1996  
BSP 89  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Reverse Diode  
Inverse diode continuous forward current I  
A
S
T = 25 °C  
-
-
-
-
0.36  
1.44  
1.4  
A
Inverse diode direct current,pulsed  
I
SM  
T = 25 °C  
-
A
Inverse diode forward voltage  
V
V
SD  
V
= 0 V, I = 0.72 A, T = 25 °C  
1.1  
GS  
F
j
Semiconductor Group  
4
Sep-12-1996  
BSP 89  
Power dissipation  
Drain current  
ƒ
ƒ
I = (T )  
D A  
P
= (T )  
tot  
A
≥
parameter: V  
10 V  
GS  
2.0  
W
0.38  
A
0.32  
ID  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
Ptot  
0.28  
0.24  
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
0.0  
0
20  
40  
60  
80 100 120  
°C 160  
TA  
0
20  
40  
60  
80 100 120  
°C 160  
TA  
Safe operating area I =f(V  
)
DS  
Transient thermal impedance  
D
ƒ
parameter : D = 0, T =25°C  
Z
= (t )  
C
th JA  
p
parameter: D = t / T  
p
10 2  
K/W  
10 1  
ZthJC  
10 0  
10 -1  
10 -2  
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.01  
single pulse  
10 -3  
10 -4  
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
tp  
Semiconductor Group  
5
Sep-12-1996  
BSP 89  
Typ. output characteristics  
ƒ(  
Typ. drain-source on-resistance  
ƒ(  
I =  
V
)
R
=
I )  
D
D
DS  
DS (on)  
parameter: t = 80 µs  
parameter: t = 80 µs, T = 25 °C  
p
p
j
19  
0.80  
l
j
P
tot = 2W  
i
k
g
h
a
b
c
d
e
Ω
f
A
0.60  
0.50  
0.40  
0.30  
0.20  
V
[V]  
16  
14  
12  
10  
8
GS  
a
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
6.0  
7.0  
8.0  
9.0  
10.0  
ID  
RDS (on)  
b
c
d
e
f
e
g
h
i
d
b
j
6
k
l
f
g
c
a
h
i
4
j
k
V
[V] =  
b
GS  
a
0.10  
0.00  
2
0
c
d
e
f
g
h
i
j
k
2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0  
0
1
2
3
4
5
6
7
8
V
10  
0.00 0.10 0.20 0.30 0.40 0.50 0.60  
A
0.80  
VDS  
ID  
Typ. transfer characteristics I = f(V  
)
Typ. forward transconductance g = f (I )  
D
GS  
fs  
D
parameter: t = 80 µs  
parameter: t = 80 µs,  
p
p
1.2  
0.55  
S
A
0.45  
gfs  
ID  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.8  
0.6  
0.4  
0.2  
0.0  
0.05  
0.00  
0
1
2
3
4
5
6
7
8
V
VGS  
10  
0.00  
0.10  
0.20  
0.30  
0.40  
A
ID  
0.55  
Semiconductor Group  
6
Sep-12-1996  
BSP 89  
Drain-source on-resistance  
Gate threshold voltage  
ƒ
ƒ
= (T )  
GS (th) j  
R
= (T )  
V
DS (on)  
j
parameter: I = 0.36 A, V = 10 V  
parameter: V = V , I = 1 mA  
GS DS D  
D
GS  
15  
4.6  
V
Ω
13  
12  
11  
10  
9
4.0  
RDS (on)  
VGS(th)  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
8
98%  
typ  
98%  
typ  
7
6
5
4
2%  
3
2
0.4  
0.0  
1
0
-60  
-20  
20  
60  
100  
°C  
Tj  
160  
-60  
-20  
20  
60  
100  
°C  
Tj  
160  
Typ. capacitances  
Forward characteristics of reverse diode  
ƒ
C = f (V )  
I = (V  
)
DS  
F
SD  
parameter: T , t = 80 µs  
parameter:V =0V, f = 1 MHz  
j
p
GS  
10 3  
10 1  
pF  
A
C
IF  
Ciss  
10 2  
10 1  
10 0  
10 0  
10 -1  
10 -2  
Coss  
Crss  
Tj = 25 °C typ  
Tj = 150 °C typ  
Tj = 25 °C (98%)  
Tj = 150 °C (98%)  
0
5
10  
15  
20  
25  
30  
V
VDS  
40  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
VSD  
3.0  
7
Sep-12-1996  
Semiconductor Group  
BSP 89  
Safe operating area I =f(V  
)
Drain-source breakdown voltage  
D
DS  
ƒ
parameter : D = 0.01, T =25°C  
V
= (T )  
C
(BR)DSS  
j
285  
V
275  
V(BR)DSS  
270  
265  
260  
255  
250  
245  
240  
235  
230  
225  
220  
215  
-60  
-20  
20  
60  
100  
°C  
Tj  
160  
Semiconductor Group  
8
Sep-12-1996  
BSP 89  
Package outlines  
SOT-223  
Dimensions in mm  
Semiconductor Group  
9
Sep-12-1996  

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