BSP762T [INFINEON]
Smart Power High-Side-Switch; 智能功率高边开关
| 型号： | BSP762T |
| 厂家： | 
Infineon |
| 描述： | Smart Power High-Side-Switch |
| 文件： | 总16页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSP 762 T
Smart Power High-Side-Switch
Product Summary
Features
Overvoltage protection
Operating voltage
V
V
41
5...34 V
V
• Overload protection
• Current limitation
On-state resistance
Nominal load current
R
I
100 mΩ
• Short circuit protection
• Thermal shutdown with restart
ON
2
A
L(nom)
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection with external resistor
• CMOS compatible input
• Loss of GND and loss of V protection
bb
• ESD - Protection
• Very low standby current
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
2004-01-27
Page 1
BSP 762 T
Block Diagram
+ V
bb
Voltage
source
Gate
protection
Overvoltage
protection
Current
limit
V Logic
OUT
Limit for
Charge pump
Level shifter
Rectifier
unclamped
ind. loads
Temperature
sensor
IN
Load
Logic
ESD
miniPROFET
GND
Load GND
Signal GND
Pin
1
2
3
4
Symbol
GND
IN
OUT
NC
Function
Logic ground
Input, activates the power switch in case of logic high signal
Output to the load
not connected
Vbb
Vbb
Vbb
Vbb
Positive power supply voltage
Positive power supply voltage
Positive power supply voltage
Positive power supply voltage
5
6
7
8
Pin configuration
Top view
•
Vbb
1
2
3
4
8
7
6
5
GND
IN
Vbb
Vbb
Vbb
OUT
NC
2004-01-27
Page 2
BSP 762 T
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
40
V
Supply voltage
Supply voltage for full short circuit protection
V
V
bb
V
bb
bb(SC)
T = -40...+150°C
j
-10 ... +16
self limited
Continuous input voltage
Load current (Short - circuit current, see page 5) I
V
IN
A
L
mA
°C
Current through input pin (DC)
Operating temperature
Storage temperature
I
± 5
-40 ...+150
-55 ... +150
1.5
IN
T
T
P
E
j
stg
tot
AS
1)
W
mJ
Power dissipation
1)2)
870
Inductive load switch-off energy dissipation
single pulse, (see page 8)
Tj =150 °C, V = 13.5 V, I = 1 A
bb
L
2)
3)
V
Load dump protection V
= V + V
V
LoadDump
A
S
Loaddump
R =2Ω, t =400ms, V = low or high, V =13,5V
I
d
IN
A
R = 13.5 Ω
60
L
kV
Electrostatic discharge voltage (Human Body Model) V
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
ESD
Input pin
all other pins
± 1
± 5
Thermal Characteristics
-
-
95
70
-
83
K/W
Thermal resistance @ min. footprint
R
th(JA)
R
th(JA)
2
1)
Thermal resistance @ 6 cm cooling area
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2
not subject to production test, specified by design
3
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Loaddump
Supply voltages higher than V
require an external current limit for the GND pin, e.g. with a
bb(AZ)
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
2004-01-27
Page 3
BSP 762 T
Unit
Electrical Characteristics
Parameter and Conditions
Symbol
Values
at T = -40...+150°C, V = 13,5V, unless otherwise specified
min.
typ. max.
bb
Load Switching Capabilities and Characteristics
On-state resistance
R
mΩ
ON
T = 25 °C, I = 2 A, V = 9...40 V
T = 150 °C
j
-
-
70
140
2.4
100
200
-
j
L
bb
1)
2
A
Nominal load current; Device on PCB
I
L(nom)
T = 85 °C, T ≤ 150 °C
C
j
-
-
-
-
90
90
170
230
1.7
1.7
Turn-on time
to 90% V
t
µs
OUT
on
R = 47 Ω
L
Turn-off time
to 10% V
t
OUT
off
R = 47 Ω
L
0.8
0.8
Slew rate on 10 to 30% V
,
dV/dt
V/µs
OUT
on
R = 47 Ω
L
Slew rate off 70 to 40% V
,
-dV/dt
off
OUT
R = 47 Ω
L
Operating Parameters
5
-
34
V
Operating voltage
Undervoltage shutdown of charge pump
V
V
bb(under)
T = -40...+85 °C
-
-
-
-
4
5.5
j
T = 150 °C
j
Undervoltage restart of charge pump
Standby current
V
-
4
5.5
µA
I
bb(off)
T = -40...+85 °C, V = 0 V
-
-
-
-
-
-
10
15
5
j
IN
2)
T = 150°C , V = 0 V
j
IN
Leakage output current (included in I
)
I
L(off)
bb(off)
V = 0 V
IN
-
0.5
1.3 mA
Operating current
I
GND
V = 5 V
IN
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2
higher current due temperature sensor
2004-01-27
Page 4
BSP 762 T
Unit
Electrical Characteristics
Parameter and Conditions
Symbol
Values
at T = -40...+150°C, V = 13,5V, unless otherwise specified
Protection Functions
Initial peak short circuit current limit (pin 5 to 3)
min.
typ. max.
bb
1)
A
I
L(SCp)
T = -40 °C, V = 20 V, t = 150 µs
-
-
4
-
10
-
18
-
-
j
bb
m
T = 25 °C
j
T = 150 °C
j
Repetitive short circuit current limit
T = T (see timing diagrams)
I
L(SCr)
-
41
7
47
-
-
j
jt
V
Output clamp (inductive load switch off)
at V = V - V
V
ON(CL)
,
ON(CL)
OUT
bb
I
= 4 mA
bb
2)
41
-
-
Overvoltage protection
= 4 mA
V
T
bb(AZ)
jt
I
bb
150
-
-
10
-
-
°C
K
Thermal overload trip temperature
Thermal hysteresis
∆T
jt
Reverse Battery
3)
-
-
-
32
-
V
mV
Reverse battery
-V
-V
bb
600
Drain-source diode voltage (V
> V )
bb
OUT
ON
T = 150 °C
j
1
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2
see also V
in circuit diagram on page 7
ON(CL)
3
Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
2004-01-27
Page 5
BSP 762 T
Unit
Electrical Characteristics
Parameter and Conditions
Symbol
Values
at T = -40...+150°C, V = 13,5V, unless otherwise specified
Input
Input turn-on threshold voltage
(see page 12)
min.
-
typ. max.
j
bb
-
-
2.2
-
V
V
V
IN(T+)
IN(T-)
0.8
Input turn-off threshold voltage
(see page 12)
Input threshold hysteresis
Off state input current (see page 12)
∆V
I
-
1
0.3
-
-
25
IN(T)
IN(off)
µA
V = 0.7 V
IN
3
-
25
5
On state input current (see page 12)
I
IN(on)
V = 5 V
IN
Input resistance (see page 7)
R
1.5
3.5
kΩ
I
2004-01-27
Page 6
BSP 762 T
Inductive and overvoltage output clamp
Terms
I
+ V
bb
bb
V
Z
V
bb
V
ON
I
I
IN
V
L
ON
IN
OUT
PROFET
OUT
GND
V
IN
GND
I
V
bb
V
GND
OUT
R
GND
V
clamped to 47V typ.
ON
Input circuit (ESD protection)
Overvoltage protection of logic part
+ V
R
bb
I
IN
V
Z2
ESD-
ZD
I
R
I
I
I
IN
Logic
GND
V
Z1
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
GND
R
GND
Signal GND
Reverse battery protection
V
=6.1V typ., V =V =47V typ.,
Z2 bb(AZ)
Z1
V
-
bb
R =3.5 kΩ typ., R =150Ω
I
GND
Logic
R
I
IN
OUT
Power
Inverse
Diode
GND
GND
R
R
L
Power GND
Signal GND
R
=150Ω, R =3.5kΩ typ.,
I
GND
Temperature protection is not active during
inverse current
2004-01-27
Page 7
BSP 762 T
disconnect with charged inductive
V
load
GND disconnect
bb
V
bb
V
bb
high
IN
OUT
IN
PROFET
OUT
PROFET
GND
GND
V
V
V
bb
IN
GND
V
bb
GND disconnect with GND pull up
Inductive Load switch-off energy
dissipation
V
bb
IN
OUT
PROFET
E
bb
E
AS
GND
E
E
Load
L
V
bb
V
V
V
IN
IN
OUT
PROFET
GND
bb
L
=
GND
Z
L
{
E
R
R
L
2
Energy stored in load inductance: E = ½ * L * I
L
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
L
E
= E + E - E = V * i (t) dt,
bb ON(CL) L
AS
L
R
with an approximate solution for R > 0Ω:
L
I
L
* L
I
L
* R
L
E
A S
=
* (V bb +|V O U T ( C L )| ) * ln(1 +
)
2 * R
L
|V O U T ( C L )|
2004-01-27
Page 8
BSP 762 T
Typ. transient thermal impedance
=f(t ) @ min. footprint
Typ. transient thermal impedance
2
Z
=f(t ) @ 6cm heatsink area
Z
thJA
p
thJA
p
Parameter: D=t /T
Parameter: D=t /T
p
p
10 2
10 2
D=0.5
D=0.5
K/W
K/W
D=0.2
D=0.2
D=0.1
10 1
D=0.1
10 1
D=0.05
D=0.05
D=0.02
D=0.02
D=0.01
10 0
10 0
D=0.01
D=0
10 -1
10 -1
D=0
10 -2
10 -2
10 -710 -610 -510 -410 -310 -210 -110 0 10 1 10 2
10 4
10 -710 -610 -510 -410 -310 -210 -110 0 10 1 10 2
10 4
s
s
t
t
p
p
Typ. on-state resistance
Typ. on-state resistance
R
= f(T ) ; V = 13,5V ; V = high
R
= f(V ); I = 0.5A ; V = high
ON
j
bb
in
ON
bb
L
in
160
200
mΩ
mΩ
150°C
120
100
80
60
40
20
0
150
125
100
75
50
25
0
25°C
-40°C
-40 -20
0
20 40 60 80 100 120
160
0
5
10
15
20
25
30
40
°C
V
V
T
bb
j
2004-01-27
Page 9
BSP 762 T
Typ. turn off time
= f(T ); R = 47Ω
Typ. turn on time
= f(T ); R = 47Ω
t
t
off
j
L
on
j
L
160
160
32V
9V
µs
µs
9V
120
100
80
60
40
20
0
120
100
80
60
40
20
0
13.5V
32V
-40 -20
0
20 40 60 80 100 120
160
-40 -20
0
20 40 60 80 100 120
160
°C
°C
T
T
j
j
Typ. slew rate on
Typ. slew rate off
dV/dt = f(T ) ; R = 47 Ω
dV/dt = f(T ); R = 47 Ω
on
j
L
off
j
L
2
2
V/µs
V/µs
1.6
1.6
1.4
1.2
1
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
32V
32V
13.5V
9V
13.5V
9V
-40 -20
0
20 40 60 80 100 120
160
-40 -20
0
20 40 60 80 100 120
160
°C
°C
T
T
j
j
2004-01-27
Page 10
BSP 762 T
Typ. standby current
= f(T ) ; V = 32V ; V = low
Typ. leakage current
I = f(T ) ; V = 32V ; V = low
L(off)
I
bb(off)
j
bb
IN
j
bb
IN
2
7
µA
µA
1.6
5
1.4
1.2
1
4
3
2
1
0.8
0.6
0.4
0.2
0
0
-40 -20
0
20 40 60 80 100 120
160
-40 -20
0
20 40 60 80 100 120
160
°C
°C
T
T
j
j
Typ. initial short circuit shutdown time
Typ. initial peak short circuit current limit
t
= f(T
) ; V = 20V
I
= f(T ) ; V = 20V
off(SC)
j,start bb
L(SCp)
j
bb
3.5
14
ms
A
2.5
2
10
8
1.5
1
6
4
0.5
2
0
0
-40 -20
0
20 40 60 80 100 120
160
-40 -20
0
20 40 60 80 100 120
160
°C
°C
T
T
j
j
2004-01-27
Page 11
BSP 762 T
Typ. input current
= f(T ); V = 13,5V; V = low/high
Typ. input current
I = f(V ); V = 13.5V
I
IN(on/off)
j
bb
= 5V
IN
IN
IN
bb
V
≤ 0,7V; V
INlow
INhigh
200
14
µA
µA
150°C
160
140
120
100
80
10
on
off
-40...25°C
8
6
4
2
60
40
20
0
0
-40 -20
0
20 40 60 80 100 120
160
0
2
4
8
°C
V
V
T
IN
j
Typ. input threshold voltage
Typ. input threshold voltage
V
= f(T ) ; V = 13,5V
V
= f(V ) ; T = 25°C
IN(th)
j
bb
IN(th)
bb
j
2
2
V
V
on
off
on
off
1.6
1.4
1.2
1
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
-40 -20
0
20 40 60 80 100 120
160
°C
5
10
15
20
25
35
V
T
j
V
bb
2004-01-27
Page 12
BSP 762 T
Maximum allowable load inductance
for a single switch off
Maximum allowable inductive switch-off
energy, single pulse
L = f(I ); T
=150°C, V =13.5V, R =0Ω
E
= f(I ); T
= 150°C, V = 13,5V
L
jstart
bb L
AS
L
jstart bb
2500
3000
mH
mJ
2000
1500
1000
500
1500
1000
500
0
0
0
0.5
1
1.5
2.5
0
0.5
1
1.5
2.5
A
A
I
I
L
L
2004-01-27
Page 13
BSP 762 T
Timing diagrams
Figure 2b: Switching a lamp,
Figure 1a: Vbb turn on:
IN
IN
OUT
V
bb
I
VOUT
L
t
t
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition
Figure 2c: Switching an inductive load
IN
IN
V O U T
9 0 %
V
OUT
t
d V /d to ff
o n
d V /d to n
t
o ff
1 0 %
IL
I
L
t
t
2004-01-27
Page 14
BSP 762 T
Figure 3a: Turn on into short circuit,
shut down by overtemperature, restart by cooling
Figure 5: Undervoltage restart of charge pump
IN
V o n
t
I
L
V b b ( u c p )
I
L(SCp)
I
L(SCr)
V
b b ( u n d er )
t
m
V b b
t
t
off(SC)
Heating up of the chip may require several milliseconds, depending
on external conditions.
Figure 4: Overtemperature:
Reset if T < T
j
jt
IN
V
OUT
T
J
t
2004-01-27
Page 15
BSP 762 T
Package and ordering code
all dimensions in mm
Package:
Ordering code:
P-DSO-8-6
Q67060-S7301-A2
Printed circuit board (FR4, 1.5mm thick, one
2
layer 70µm, 6cm active heatsink area ) as
a reference for max. power dissipation P
tot
and thermal
nominal load current I
L(nom)
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
resistance R
thja
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
2004-01-27
Page 16
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